ON NUP412VP5 Schematic [ru]

NUP412VP5

Low Capacitance
Quad Array for
ESD Protection

This integrated transient voltage suppressor device (TVS) is
designed for applications requiring transient overvoltage protection. It
is intended to be used in sensitive equipment such as wireless headsets,
PDAs, digital cameras, computers, printers, communication systems,
and other applications. The integrated design provides very effective
and reliable protection for four separate lines using only one package.
This device is ideal for situations where board space is at a premium.

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Features

• ESD Protection: IEC61000−4−2: Level 4

• Four Separate Unidirectional Configurations for Protection

• Low Leakage Current < 1 mA @ 9 V

• Small SOT−953 SMT Package

• Low Capacitance

• These are Pb−Free Devices

Benefits

• Provides Protection for ESD Industry Standards: IEC 61000, HBM

• Protects Four Lines Against Transient Voltage Conditions

• Minimize Power Consumption of the System

• Minimize PCB Board Space

Typical Applications

• Cellular and Portable Electronics

• Serial and Parallel Ports

• Microprocessor Based Equipment

• Notebooks, Desktops, Servers

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SOT−953

CASE 526AB

MARKING DIAGRAM

2M

1

2 = Specific Device Code
M = Date & Assembly Code

ORDERING INFORMATION

Device Package Shipping

NUP412VP5T5G SOT−953

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

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†

8000 /

Tape & Reel

© Semiconductor Components Industries, LLC, 2008

May, 2008 − Rev. 1

1 Publication Order Number:

NUP412VP5/D

NUP412VP5

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

V

QV

I

V

RWM

V

V

Z

I

Z

Maximum Reverse Peak Pulse Current

PP

Clamping Voltage @ I

C

Working Peak Reverse Voltage

I

Maximum Reverse Leakage Current @ V

R

Breakdown Voltage @ I

BR

I

Test Current

T

Maximum Temperature Coefficient of V

BR

I

Forward Current

F

Forward Voltage @ I

F

Maximum Zener Impedance @ I

ZT

Reverse Current

ZK

Maximum Zener Impedance @ I

ZK

MAXIMUM RATINGS (T

Parameter

PP

T

F

= 25°C unless otherwise noted)

A

ZT

ZK

BR

RWM

VCV

BR

V

RWM

I

I

F

I

V

R

F

I

T

I

PP

Uni−Directional

V

Characteristic Symbol Value Unit

Peak Power Dissipation (8 X 20 ms @ TA = 25°C) (Note 1)

Thermal Resistance Junction−to−Ambient

P

R

Above 25°C, Derate

Maximum Junction Temperature T

Jmax

Operating Junction and Storage Temperature Range TJ T

Lead Solder Temperature (10 seconds duration) T

Human Body Model (HBM)

ESD 8000

Machine Model (MM)

PK

q

JA

stg

L

18 W

560

4.5

°C/W

mW/°C

150 °C

−55 to +150 °C

260 °C

400

V

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.

1. Non−repetitive current.

ELECTRICAL CHARACTERISTICS (T

Device

= 25°C)

A

Device

Marking

Breakdown Voltage

@ 5 mA (Volts)

V

BR

Min Nom Max V

Leakage Current

@ V

I

RM

RM

I

RWM

(mA)

RWM

Typ Capacitance

@ 0 V Bias (pF)

(Note 2)

Typ Capacitance

@ 3 V Bias (pF)

(Note 2)

Typ Max Typ Max

NUP412VP5 (Note 3) 2 11.4 12 12.7 9.0 0.5 6.5 10 3.5 5.0

2. Capacitance of one diode at f = 1 MHz, TA = 25°C.

at 5 mA.

3. V

BR

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