ON NUP3112UPMU Schematic [ru]
NUP3112UPMU
Quad Transient Voltage
Suppressor Array
ESD Protection Diodes with Ultra−Low
(0.7 pF) Capacitance
The three−line voltage transient suppressor array is designed to protect
voltage−sensitive components that require ultra−low capacitance from
ESD and transient voltage events. This device features a common anode
design which protects three independent high speed data lines and a V
CC
power line in a single six−lead UDFN low profile package.
Excellent clamping capability, low capacitance, low leakage, and fast
response time make these parts ideal for ESD protection on designs
where board space is at a premium. Because of its low capacitance, it is
suited for use in high frequency designs such as a USB 2.0 high speed.
Features
• Low Capacitance Data Lines (0.7 pF Typical)
• Protects up to Three Data Lines Plus a V
CC
Pin
• UDFN Package, 1.6 x 1.6 mm
• Low Profile of 0.50 mm for Ultra Slim Design
• ESD Rating: IEC61000−4−2: Level 4
− Contact (14 kV)
• V
Pin = 15 V Protection
CC
• D
, D2, and D3 Pins = 5.2 V Minimum Protection
1
• This is a Pb−Free Device
Typical Applications
• USB 2.0 High−Speed Interface
• Cell Phones
• MP3 Players
• SIM Card Protection
MAXIMUM RATINGS (T
Symbol
T
J
T
STG
T
L
ESD IEC 61000−4−2 Contact 14000 V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Operating Junction Temperature Range −40 to 125 °C
Storage Temperature Range −55 to 150 °C
Lead Solder Temperature – Maximum
(10 seconds)
= 25°C, unless otherwise specified)
J
Rating Value Unit
260 °C
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D1D2D3V
UDFN6 1.6x1.6
6
MU SUFFIX
1
(Note: Microdot may be in either location)
Device Package Shipping
NUP3112UPMUTAG UDFN6
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
CASE 517AP
XX = Specific Device Code
M
= Date Code
G = Pb−Free Package
PIN CONNECTIONS
D
1
1
GND
2
D
2
3
D
3
ORDERING INFORMATION
(Pb−Free)
CC
MARKING
DIAGRAM
1
XX MG
G
6
V
CC
NC
5
NC
4
†
3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2008
June, 2008− Rev. 0
1 Publication Order Number:
NUP3112UPMU/D
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
V
I
V
RWM
V
V
P
Maximum Reverse Peak Pulse Current
PP
Clamping Voltage @ I
C
Working Peak Reverse Voltage
I
Maximum Reverse Leakage Current @ V
R
Breakdown Voltage @ I
BR
I
Test Current
T
I
Forward Current
F
Forward Voltage @ I
F
Peak Power Dissipation
pk
C Max. Capacitance @ VR = 0 and f = 1.0 MHz
Parameter
PP
T
F
NUP3112UPMU
RWM
VCV
V
RWM
BR
Uni−Directional TVS
I
I
F
I
V
R
F
I
T
I
PP
V
ELECTRICAL CHARACTERISTICS (T
= 25°C, unless otherwise specified)
J
Parameter Conditions Symbol Min Typ Max Unit
Reverse Working Voltage (D1, D2, and D3) (Note 1) V
Reverse Working Voltage (V1) (Note 1) V
Breakdown Voltage (D1, D2, and D3) IT = 1 mA, (Note 2) V
Breakdown Voltage (VCC) IT = 5 mA, (Note 2) V
Reverse Leakage Current (D1, D2, and D3) @ V
Reverse Leakage Current (VCC) @ V
RWM
RWM2
Capacitance (D1, D2, and D3) VR = 0 V, f = 1 MHz (Line to GND) C
1. TVS devices are normally selected according to the working peak reverse voltage (V
or continuous peak operating voltage level.
is measured at pulse test current IT.
2. V
BR
), which should be equal or greater than the DC
RWM
RWM1
RWM2
BR
BR2
I
R
I
R
J
− − 4.0 V
− − 12 V
5.2 5.5 − V
13.5 15 15.8 V
− − 1.0
− − 1.0
− 0.7 0.9 pF
mA
mA
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
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2
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