Low Capacitance ESD Protection for
High Speed Data
The NUP2114 transient voltage suppressor is designed to protect
high speed data lines from ESD. Ultra−low capacitance and high level
of ESD protection makes this device well suited for use in USB 2.0
applications.
Features
Low Capacitance 0.8 pF
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
AEC−Q101 Qualified and PPAP Capable − SNUP2114
Low Clamping Voltage
Stand Off Voltage: 5 V
Low Leakage
ESD Rating of Class 3B (Exceeding 8 kV) per Human Body model
and Class C (Exceeding 400 V) per Machine Model
Protection for the Following IEC Standards:
IEC 61000−4−2 Level 4 ESD Protection
UL Flammability Rating of 94 V−0
These are Pb−Free Devices
Typical Applications
High Speed Communication Line Protection
USB 2.0 High Speed Data Line and Power Line Protection
Monitors and Flat Panel Displays
MP3
Gigabit Ethernet
Notebook Computers
Digital Video Interface (DVI) and HDMI
MAXIMUM RATINGS (T
Rating
Operating Junction Temperature RangeT
Storage Temperature RangeT
Lead Solder Temperature −
Maximum (10 Seconds)
Human Body Model (HBM)
Machine Model (MM)
IEC 61000−4−2 Contact
IEC61000−4−2 Air
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
See Application Note AND8308/D for further description of
survivability specs.
= 25C unless otherwise noted)
J
SymbolValueUnit
J
stg
T
L
ESD16000
−40 to +125C
−55 to +150C
260C
V
400
8000
15000
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SOT−553
CASE 463B
I/O
MARKING DIAGRAMS
P2MG
G
1
SOT−553TSOP−6
P2, P2M = Specific Device Code
M= Date Code
G= Pb−Free Package
(*Note: Microdot may be in either location)
PIN CONNECTIONS
15
V
P
2
V
N
34
NC
SOT−553
16
I/O
25
V
N
34
NC
TSOP−6
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
TSOP−6
CASE 318G
V
P
V
N
P2M MG
1
G
I/O
I/O
I/O
V
NC
I/O
P
Semiconductor Components Industries, LLC, 2012
March, 2012 − Rev. 1
1Publication Order Number:
NUP2114/D
NUP2114 Series, SNUP2114UCMR6T1G
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise noted)
Symbol
V
I
V
RWM
V
V
P
Maximum Reverse Peak Pulse Current
PP
Clamping Voltage @ I
C
Working Peak Reverse Voltage
I
Maximum Reverse Leakage Current @ V
R
Breakdown Voltage @ I
BR
I
Test Current
T
I
Forward Current
F
Forward Voltage @ I
F
Peak Power Dissipation
pk
CMax. Capacitance @ VR = 0 and f = 1.0 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T
ParameterSymbolConditionsMinTypMaxUnit
Reverse Working VoltageV
Breakdown VoltageV
Reverse Leakage CurrentI
Clamping VoltageV
Clamping VoltageV
Maximum Peak Pulse CurrentI
Junction CapacitanceC
Junction CapacitanceC
Clamping VoltageV
Clamping VoltageV
1. TVS devices are normally selected according to the working peak reverse voltage (V
or continuous peak operating voltage level.
is measured at pulse test current IT.
2. V
BR
3. Nonrepetitive current pulse (Pin 5 to Pin 2)
4. Surge current waveform per Figure 5.
5. Typical waveform. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
6. Include S-prefix devices where applicable.
Parameter
PP
T
F
RWM
BR
R
C
C
PP
J
J
C
C
V
RWM
=25C unless otherwise specified)
J
VCV
BR
RWM
(Note 1)5.0V
IT = 1 mA, (Note 2)5.57.5V
V
= 5 V1.0
RWM
IPP = 5 A (Note 3)9.0V
IPP = 8 A (Note 3)10V
8x20 ms Waveform
VR = 0 V, f = 1 MHz between I/O Pins and GND0.81.0pF
VR = 0 V, f = 1 MHz between I/O Pins0.5pF
@ IPP = 1 A (Note 4)12V
Per IEC 61000−4−2 (Note 5)Figures 1 and 2V
), which should be equal or greater than the DC
RWM
I
I
F
I
V
R
F
I
T
I
PP
Uni−Directional TVS
V
mA
12A
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
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2
NUP2114 Series, SNUP2114UCMR6T1G
IEC 61000−4−2 Spec.
Test
Voltage
Level
127.542
241584
3622.5126
4830168
(kV)
ESD Gun
First Peak
Current
(A)
Current at
30 ns (A)
TVS
50 W
Cable
IEC61000−4−2 Waveform
I
peak
Current at
60 ns (A)
100%
90%
I @ 30 ns
I @ 60 ns
10%
Figure 3. IEC61000−4−2 Spec
Oscilloscope
50 W
tP = 0.7 ns to 1 ns
Figure 4. Diagram of ESD Test Setup
The following is taken from Application Note
AND8308/D − Interpretation of Datasheet Parameters
for ESD Devices.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
100
t
r
90
80
70
60
50
40
30
20
% OF PEAK PULSE CURRENT
10
0
020406080
PEAK VALUE I
t
P
Figure 5. 8 X 20 ms Pulse Waveform
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
@ 8 ms
RSM
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE I
t, TIME (ms)
/2 @ 20 ms
RSM
http://onsemi.com
3
NUP2114 Series, SNUP2114UCMR6T1G
Figure 6. 500 MHz Data Pattern
ORDERING INFORMATION
DeviceMarkingPackageShipping
NUP2114UPXV5T1GP2SOT−553
(Pb−Free)
NUP2114UCMR6T1GP2MTSOP−6
(Pb−Free)
SNUP2114UCMR6T1GP2MTSOP−6
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
4,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
†
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4
NUP2114 Series, SNUP2114UCMR6T1G
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE U
E1
NOTE 5
0.05
A1
D
H
456
E
23
1
b
e
A
L
DETAIL Z
c
M
DETAIL Z
L2
GAUGE
PLANE
C
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM
LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR
GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D
AND E1 ARE DETERMINED AT DATUM H.
5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.
DIMAMINNOMMAX
A10.010.060.10
b0.250.380.50
c0.100.180.26
D2.903.003.10
E2.502.753.00
E1
e0.850.951.05
L0.200.400.60
L2
M
MILLIMETERS
0.901.001.10
1.301.501.70
0.25 BSC
010
−
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.60
3.20
6X
0.95
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
D
−X−
45
12 3
e
NUP2114 Series, SNUP2114UCMR6T1G
E
−Y−
b
5 PL
0.08 (0.003)X
M
PACKAGE DIMENSIONS
SOT−553, 6 LEAD
CASE 463B−01
ISSUE B
A
Y
L
H
E
c
SOLDERING FOOTPRINT*
0.3
0.0118
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
DIMAMINNOMMAXMIN
b0.170.220.270.007
c
D1.501.601.700.059
E1.101.201.300.043
e0.50 BSC
L0.100.200.300.004
H
E
MILLIMETERS
0.500.550.600.020
0.080.130.18
1.501.601.700.0590.0630.067
0.0030.0050.007
INCHES
NOMMAX
0.0220.024
0.0090.011
0.0630.067
0.0470.051
0.020 BSC
0.0080.012
0.45
0.0177
1.0
1.35
0.0394
0.0531
0.5
0.5
0.0197
0.0197
mm
ǒ
SCALE 20:1
inches
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867Toll Free USA/Canada
Email: orderlit@onsemi.com
N. American Technical Support: 800−282−9855 Toll Free
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Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
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6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NUP2114/D
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