ON NUP2114UCMR6T1G, NUP2114UPXV5T1G, SNUP2114UCMR6T1G Schematic [ru]
NUP2114 Series,
SNUP2114UCMR6T1G
Transient Voltage
Suppressors
Low Capacitance ESD Protection for
High Speed Data
The NUP2114 transient voltage suppressor is designed to protect
high speed data lines from ESD. Ultra−low capacitance and high level
of ESD protection makes this device well suited for use in USB 2.0
applications.
Features
Low Capacitance 0.8 pF
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
AEC−Q101 Qualified and PPAP Capable − SNUP2114
Low Clamping Voltage
Stand Off Voltage: 5 V
Low Leakage
ESD Rating of Class 3B (Exceeding 8 kV) per Human Body model
and Class C (Exceeding 400 V) per Machine Model
Protection for the Following IEC Standards:
IEC 61000−4−2 Level 4 ESD Protection
UL Flammability Rating of 94 V−0
These are Pb−Free Devices
Typical Applications
High Speed Communication Line Protection
USB 2.0 High Speed Data Line and Power Line Protection
Monitors and Flat Panel Displays
MP3
Gigabit Ethernet
Notebook Computers
Digital Video Interface (DVI) and HDMI
MAXIMUM RATINGS (T
Rating
Operating Junction Temperature Range T
Storage Temperature Range T
Lead Solder Temperature −
Maximum (10 Seconds)
Human Body Model (HBM)
Machine Model (MM)
IEC 61000−4−2 Contact
IEC61000−4−2 Air
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
See Application Note AND8308/D for further description of
survivability specs.
= 25C unless otherwise noted)
J
Symbol Value Unit
J
stg
T
L
ESD 16000
−40 to +125 C
−55 to +150 C
260 C
V
400
8000
15000
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SOT−553
CASE 463B
I/O
MARKING DIAGRAMS
P2MG
G
1
SOT−553 TSOP−6
P2, P2M = Specific Device Code
M = Date Code
G = Pb−Free Package
(*Note: Microdot may be in either location)
PIN CONNECTIONS
15
V
P
2
V
N
34
NC
SOT−553
16
I/O
25
V
N
34
NC
TSOP−6
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
TSOP−6
CASE 318G
V
P
V
N
P2M MG
1
G
I/O
I/O
I/O
V
NC
I/O
P
Semiconductor Components Industries, LLC, 2012
March, 2012 − Rev. 1
1 Publication Order Number:
NUP2114/D
NUP2114 Series, SNUP2114UCMR6T1G
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise noted)
Symbol
V
I
V
RWM
V
V
P
Maximum Reverse Peak Pulse Current
PP
Clamping Voltage @ I
C
Working Peak Reverse Voltage
I
Maximum Reverse Leakage Current @ V
R
Breakdown Voltage @ I
BR
I
Test Current
T
I
Forward Current
F
Forward Voltage @ I
F
Peak Power Dissipation
pk
C Max. Capacitance @ VR = 0 and f = 1.0 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T
Parameter Symbol Conditions Min Typ Max Unit
Reverse Working Voltage V
Breakdown Voltage V
Reverse Leakage Current I
Clamping Voltage V
Clamping Voltage V
Maximum Peak Pulse Current I
Junction Capacitance C
Junction Capacitance C
Clamping Voltage V
Clamping Voltage V
1. TVS devices are normally selected according to the working peak reverse voltage (V
or continuous peak operating voltage level.
is measured at pulse test current IT.
2. V
BR
3. Nonrepetitive current pulse (Pin 5 to Pin 2)
4. Surge current waveform per Figure 5.
5. Typical waveform. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
6. Include S-prefix devices where applicable.
Parameter
PP
T
F
RWM
BR
R
C
C
PP
J
J
C
C
V
RWM
=25C unless otherwise specified)
J
VCV
BR
RWM
(Note 1) 5.0 V
IT = 1 mA, (Note 2) 5.5 7.5 V
V
= 5 V 1.0
RWM
IPP = 5 A (Note 3) 9.0 V
IPP = 8 A (Note 3) 10 V
8x20 ms Waveform
VR = 0 V, f = 1 MHz between I/O Pins and GND 0.8 1.0 pF
VR = 0 V, f = 1 MHz between I/O Pins 0.5 pF
@ IPP = 1 A (Note 4) 12 V
Per IEC 61000−4−2 (Note 5) Figures 1 and 2 V
), which should be equal or greater than the DC
RWM
I
I
F
I
V
R
F
I
T
I
PP
Uni−Directional TVS
V
mA
12 A
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
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NUP2114 Series, SNUP2114UCMR6T1G
IEC 61000−4−2 Spec.
Test
Voltage
Level
1 2 7.5 4 2
2 4 15 8 4
3 6 22.5 12 6
4 8 30 16 8
(kV)
ESD Gun
First Peak
Current
(A)
Current at
30 ns (A)
TVS
50 W
Cable
IEC61000−4−2 Waveform
I
peak
Current at
60 ns (A)
100%
90%
I @ 30 ns
I @ 60 ns
10%
Figure 3. IEC61000−4−2 Spec
Oscilloscope
50 W
tP = 0.7 ns to 1 ns
Figure 4. Diagram of ESD Test Setup
The following is taken from Application Note
AND8308/D − Interpretation of Datasheet Parameters
for ESD Devices.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
100
t
r
90
80
70
60
50
40
30
20
% OF PEAK PULSE CURRENT
10
0
020406080
PEAK VALUE I
t
P
Figure 5. 8 X 20 ms Pulse Waveform
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
@ 8 ms
RSM
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE I
t, TIME (ms)
/2 @ 20 ms
RSM
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