ON NTMFS4955NT1G Schematic

NTMFS4955N

Power MOSFET

30 V, 48 A, Single N−Channel, SO−8 FL

Features

• Low R

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• Optimized for 5 V, 12 V Gate Drives

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• CPU Power Delivery

• DC−DC Converters

MAXIMUM RATINGS (T

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current R (Note 1)

Power Dissipation

(Note 1)

R

q

JA

Continuous Drain Current R (Note 1)

Power Dissipation

≤ 10 s (Note 1)

R

q

JA

Continuous Drain Current R (Note 2)

Power Dissipation R

(Note 2)

q

JA

Continuous Drain Current R (Note 1)

Power Dissipation

(Note 1)

R

q

JC

Pulsed Drain Current

Current Limited by Package TA = 25°C I

Operating Junction and Storage Temperature

Source Current (Body Diode) I

Drain to Source DV/DT dV/d

Single Pulse Drain−to−Source Avalanche Energy (T

= 26 Apk, L = 0.1 mH, RG = 25 W)

I

L

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

to Minimize Conduction Losses

DS(on)

= 25°C unless otherwise stated)

J

Parameter Symbol Value Unit

DSS

GS

TA = 25°C

q

JA

≤ 10 s

q

JA

Steady

State

q

JA

q

JC

TA = 25°C, tp = 10 ms

= 25°C, VDD = 24 V, VGS = 10 V,

J

TA = 100°C 10.5

TA = 25°C P

TA = 25°C

TA = 100°C 15.9

TA = 25°C P

TA = 25°C

TA = 100°C 6.2

TA = 25°C P

TC = 25°C

TC =100°C 30

TC = 25°C P

I

DM

Dmax

TJ,

T

STG

E

AS

T

D

S

t

L

30 V

±20 V

16.7

2.70 W

25.2

6.16 W

9.7

0.92 W

48

23.2 W

210 A

100 A

−55 to +150

21 A

6.0 V/ns

34 mJ

260 °C

A

°C

http://onsemi.com

V

(BR)DSS

30 V

G (4)

R

MAX ID MAX

DS(ON)

5.6 mW @ 10 V

8.5 mW @ 4.5 V

D (5,6)

S (1,2,3)

N−CHANNEL MOSFET

48 A

MARKING DIAGRAM

D

1

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability

S

4955N

S

AYWZZ

S

G

D

ORDERING INFORMATION

Device Package Shipping

NTMFS4955NT1G SO−8 FL

(Pb−Free)

NTMFS4955NT3G SO−8 FL

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

1500 /

Tape & Reel

5000 /

Tape & Reel

D

†

December, 2013 − Rev. 7

1 Publication Order Number:

NTMFS4955N/D

NTMFS4955N

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case (Drain)

Junction−to−Ambient – Steady State (Note 3)

Junction−to−Ambient – Steady State (Note 4)

Junction−to−Ambient – (t ≤ 10 s) (Note 3)

3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

4. Surface−mounted on FR4 board using the minimum recommended pad size.

R

q

JC

R

q

JA

R

q

JA

R

q

JA

5.4

46.3

136.2

20.3

°C/W

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

J

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage (transient)

Drain−to−Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

V

(BR)DSSt

V

(BR)DSS

T

DSS

GSS

VGS = 0 V, ID = 250 mA

VGS = 0 V, I

T

= 25°C, t

case

/

J

VGS = 0 V,

V

= 24 V

DS

VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Negative Threshold Temperature Coefficient V

Drain−to−Source On Resistance R

V

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V

VGS = 4.5 V

Forward Transconductance g

FS

VDS = 1.5 V, ID = 15 A 52 S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Capacitance Ratio C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Total Gate Charge Q

C

ISS

OSS

RSS

C

ISS

G(TOT)

G(TH)

GS

GD

G(TOT)

VGS = 0 V, f = 1 MHz, VDS = 15 V

/

VGS = 0 V, VDS = 15 V, f = 1 MHz 0.11 0.22

VGS = 4.5 V, VDS = 15 V; ID = 30 A

VGS = 10 V, VDS = 15 V; ID = 30 A 21.5 nC

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(ON)

r

d(OFF)

f

VGS = 4.5 V, VDS = 15 V,

= 15 A, RG = 3.0 W

I

D

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

30 V

D(aval)

transient

= 11.0 A,

= 100 ns

34 V

TJ = 25°C 1.0

TJ = 125°C 10

1.2 1.7 2.2 V

ID = 30 A 4.5 5.6

ID = 15 A 4.5

ID = 30 A 6.8 8.5

ID = 15 A 6.7

21

mV/°C

mA

3.9 mV/°C

mW

1264

483

pF

143

10.8

2.0

3.8

nC

4.2

9.5

32.7

16.4

ns

6.2

http://onsemi.com

2

NTMFS4955N

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

J

Parameter UnitMaxTypMinTest ConditionSymbol

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(ON)

r

d(OFF)

f

VGS = 10 V, VDS = 15 V,

= 15 A, RG = 3.0 W

I

D

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

V

SD

VGS = 0 V,

IS = 30 A

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

RR

a

b

RR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 30 A

PACKAGE PARASITIC VALUES

Source Inductance

Drain Inductance L

Gate Inductance L

Gate Resistance R

L

S

D

G

TA = 25°C

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

7.4

27.5

20.3

4.1

TJ = 25°C 0.86 1.1

TJ = 125°C 0.75

25.8

12.4

13.4

13.6 nC

1.00 nH

0.005 nH

1.84 nH

1.0 2.2

ns

V

ns

W

http://onsemi.com

3

ON NTMFS4955NT1G Schematic [ru]