ON NTF3055L108 Schematic [ru]

NTF3055L108

Preferred Device

Power MOSFET

3.0 Amps, 60 Volts, Logic Level

N–Channel SOT–223

Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.

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Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MAXIMUM RATINGS (T

Drain–to–Source Voltage V
Drain–to–Gate Voltage (RGS = 1.0 MΩ) V
Gate–to–Source Voltage

– Continuous
– Non–repetitive (t

Drain Current

– Continuous @ T
– Continuous @ T
– Single Pulse (t

Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ T

Derate above 25°C

Operating and Storage Temperature Range TJ, T

Single Pulse Drain–to–Source Avalanche

Energy – Starting T

= 25 Vdc, VGS = 5.0 Vdc,

(V

DD

I

(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc)

L

Thermal Resistance

–Junction to Ambient (Note 1)
–Junction to Ambient (Note 2)

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

1. When surface mounted to an FR4 board using 1″ pad size, 1 oz.

(Cu. Area 0.0995 in

2. When surface mounted to an FR4 board using minimum recommended pad

size, 2–2.4 oz. (Cu. Area 0.272 in

p

= 25°C unless otherwise noted)

C

Rating

≤ 10 ms)

p

= 25°C

A

= 100°C

A

≤ 10 µs)

= 25°C (Note 2)

A

= 25°C

J

2

).

2

).

Symbol Value Unit

stg

60 Vdc
60 Vdc

± 15
± 20

3.0

1.4

9.0

2.1

1.3

0.014

–55 to

175

74 mJ

72.3
114

260 °C

Vdc
Vpk

Adc

Apk

Watts
Watts

W/°C

°C

°C/W

V

E

R
R

DSS
DGR

GS

I
I

I

DM

P

AS

θ
θ

T

D
D

D

JA
JA

L

3.0 AMPERES
60 VOLTS

R

DS(on)

G

4

1

2

3

3055L = Device Code
L = Location Code
WW = Work Week

PIN ASSIGNMENT

ORDERING INFORMATION

Device Package Shipping

NTF3055L108T1 SOT–223 1000/Tape & Reel
NTF3055L108T3 SOT–223 4000/Tape & Reel

= 120 m

N–Channel

D

S

SOT–223

CASE 318E

STYLE 3

4

Drain

Gate Drain Source

321

MARKING
DIAGRAM

3055L

LWW

 Semiconductor Components Industries, LLC, 2001

October, 2001 – Rev. 1

NTF3055L108T3LF SOT–223 4000/Tape & Reel

Preferred devices are recommended choices for future use
and best overall value.

1

Publication Order Number:

NTF3055L108/D

NTF3055L108

)

f

MHz)

R

G

9.1 Ω) (Note 3)
)

V

GS

Vdc) (Note 3)

(I

S

Adc, V

GS

Vdc

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage (Note 3)

(V

= 0 Vdc, ID = 250 µAdc)

GS

Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current

(V

= 60 Vdc, VGS = 0 Vdc)

DS

= 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

(V

DS

Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

(V

= VGS, ID = 250 µAdc)

DS

Threshold Temperature Coefficient (Negative)
Static Drain–to–Source On–Resistance (Note 3)

= 5.0 Vdc, ID = 1.5 Adc)

(V

GS

Static Drain–to–Source On–Resistance (Note 3)

(V

= 5.0 Vdc, ID = 3.0 Adc)

GS

= 5.0 Vdc, ID = 1.5 Adc, TJ = 150°C)

(V

GS

Forward Transconductance (Note 3) (VDS = 7.0 Vdc, ID = 3.0 Adc)

(Note 3)

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance

(VDS = 25 Vdc, V

f = 1.0 MHz

= 1.0

GS

= 0 V,

Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 4)

Turn–On Delay Time t

(V

Rise Time
Turn–Off Delay Time

= 30 Vdc, ID = 3.0 Adc,

DD

VGS = 5.0 Vdc,

= 9.1 Ω) (Note 3)

R

G

Fall Time
Gate Charge

(VDS = 48 Vdc, ID = 3.0 Adc,

V

= 5.0 Vdc) (Note 3

= 5.0

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (IS = 3.0 Adc, VGS = 0 Vdc)

Reverse Recovery Time

Reverse Recovery Stored Charge Q

3. Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤ 2.0%.

4. Switching characteristics are independent of operating junction temperatures.

(I

= 3.0 Adc, VGS = 0 Vdc,

S

= 150°C) (Note 3)

T

J

(IS = 3.0 Adc, VGS = 0 Vdc,

3.0
/dt = 100 A/µs) (Note 3)

dI

S

0

,

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

V

DS(on)

g

C
C
C

d(on)

t

d(off)

Q

Q
Q

V

t
t
t

fs

iss

oss

rss

t

r

t

f

SD

rr
a
b

RR

60

–

68
68

–
–

mV/°C

µAdc

Vdc

–
–

–
–

1.0
10

– – ± 100 nAdc

Vdc

1.0
–

1.68

4.6

2.0
–

mV/°C

mΩ

– 92 120

Vdc

– 0.290

0.250

0.43
–

– 5.7 – Mhos

– 313 440

pF
– 112 160
– 40 60

– 11 25

ns
– 35 70
– 22 45
– 27 60

T
1
2

– 7.6 15
– 1.4 –
– 4.0 –

nC

Vdc
–
–

– 35 –

0.87

0.72

1.0
–

ns
– 21 –
– 14 –
– 0.044 – µC

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2

NTF3055L108

6

5

4

3

2

DRAIN CURRENT (AMPS)

D,

1

I

0

0

0.5

V

DRAIN–TO–SOURCE VOLTAGE (VOLTS)

DS,

VGS = 4.5 V

VGS = 6 V

VGS = 10 V

Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics

0.16
VGS = 5 V

0.14

0.12

0.1

0.08

0.06

VGS = 3.5 V

1.5 2.5

TJ = 100°C

TJ = 25°C

TJ = –55°C

VGS = 3.4 V

VGS = 3.2 V

VGS = 3 V

VGS = 2.8 V

VGS = 2.5 V

6

V

> = 10 V

DS

5

4

3

TJ = 100°C

2

DRAIN CURRENT (AMPS)

D,

1

I

TJ = 25°C

TJ = –55°C

321

0

15241.5 2.5 3 3.5 4.5
V

GATE–TO–SOURCE VOLTAGE (VOLTS)

GS,

0.16
VGS = 10 V

0.14

0.12

TJ = 100°C

0.1
TJ = 25°C

0.08

0.06

TJ = –55°C

0.04

DRAIN–TO–SOURCE RESISTANCE (Ω)

0.02

DS(on),

R

0

146

2

I

DRAIN CURRENT (AMPS)

D,

Figure 3. On–Resistance vs. Gate–to–Source

Voltage

GATE–TO–SOURCE VOLTAGE (VOLTS)

V

GS,

2

ID = 1.5 A
V

1.8

1.6

1.4

1.2

1

0.8

0.6
–50 50250–25 75 125100

DRAIN–TO–SOURCE RESISTANCE (NORMALIZED)

DS(on),

R

= 5 V

GS

T

, JUNCTION TEMPERATURE (°C)

J

Figure 5. On–Resistance Variation with

Temperature

0.04

DRAIN–TO–SOURCE RESISTANCE (Ω)

53

0.02

DS(on),

R

0

14653

2

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance vs. Drain Current and

Gate Voltage

10000

VGS = 0 V

1000

TJ = 150°C

100

150

, LEAKAGE (nA)

DSS

I

175

10

1

04060302010 50

V

DRAIN–TO–SOURCE VOLTAGE (VOLTS)

DS,

TJ = 100°C

Figure 6. Drain–to–Source Leakage Current

vs. Voltage

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3