ON NTD20P06LG, NTDV20P06LT4G Schematic [ru]

NTD20P06L, NTDV20P06L

Power MOSFET

−60 V, −15.5 A, Single P−Channel, DPAK

Features

• Withstands High Energy in Avalanche and Commutation Modes

• Low Gate Charge for Fast Switching

• AEC Q101 Qualified − NTDV20P06L

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Bridge Circuits

• Power Supplies, Power Motor Controls

• DC−DC Conversion

V

(BR)DSS

−60 V

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R

TYP

DS(on)

130 mW @ −5.0 V

P−Channel

D

MAX

I

D

(Note 1)

−15.5 A

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain−to−Source Voltage V

Gate−to−Source
Voltage

Continuous
Drain Current
(Note 1)

Power Dissipa­tion (Note 1)

Pulsed Drain
Current

Operating Junction and Storage Temperature TJ,

Single Pulse Drain−to−Source Avalanche
Energy (V
L = 2.7 mH, R

Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)

DD

Non−Repetitive tp v10 ms V

= 25 V, V

= 25 W)

G

= 25°C unless otherwise noted)

J

Continuous V

Steady State TA = 25°C I

Steady State TA = 25°C P

tp = 10 ms

T

= 5 V, IPK = 15 A,

GS

DSS

GSM

I

DM

STG

E

T

GS

D

D

AS

L

−60 V

$20 V

$30

−15.5 A

65 W

$50 A

−55 to
175

304 mJ

260 °C

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Case (Drain)

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – Steady State (Note 2)

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Sur fac e−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces)

2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412 in sq.)

R

q

JC

R

q

JA

R

q

JA

2.3

80

110

°C/W

G

S

MARKING DIAGRAMS

Gate

Gate

1

1

4

Drain

AYWW

2

Drain

4

Drain

AYWW

2

Drain

T20

T20

P06LG

3
Source

P06LG

3
Source

4

2

1

3

DPAK

CASE 369C

STYLE 2

4

1

2

3

IPAK/DPAK
CASE 369D

STYLE 2

20P06L Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2011

August, 2011 − Rev. 6

1 Publication Order Number:

NTD20P06L/D

NTD20P06L, NTDV20P06L

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise noted)

J

Symbol Test Condition Min Typ Max Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage
Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

VGS = 0 V, ID = −250 mA

V

= 0 V,

GS

V

= −60 V

DS

VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Gate Threshold Temperature Coefficient V

Drain−to−Source On Resistance R

Forward Transconductance g

Drain−to−Source On−Voltage V

V

GS(TH)

GS(TH)/TJ

DS(on)

FS

DS(on)

VGS = VDS, ID = −250 mA

VGS = −5.0 V, ID = −7.5 A 0.130 0.150 W

V

= −5.0 V, ID = −15 A 0.143

GS

V

= −10 V, ID = −7.5 A 11 S

DS

VGS = −5.0 V,

I

= −7.5 A

D

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

C

ISS

OSS

RSS

G(TOT)

GS

GD

VGS = 0 V, f = 1 MHz, VDS = −25 V

V

= −5.0 V, V

GS

I

= −18 A

D

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(ON)

r

d(OFF)

f

VGS = −5.0 V, VDD = −30 V,

= −15 A, RG = 9.1 W

I

D

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

V

SD

RR

a

b

RR

VGS = 0 V, IS = −15 A

VGS = 0 V, dIS/dt = 100 A/ms,

IS = −12 A

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%

4. Switching characteristics are independent of operating junction temperatures

−60 −74 V

−64 mV/°C

TJ = 25°C −1.0 mA

TJ = 150°C −10

−1.0 −1.5 −2.0 V

3.1 mV/°C

TJ = 25°C −1.2

TJ = 150°C −1.9

740 1190

207 300

66 120

15 26

= −48 V,

DS

4.0

7.0

11 20

90 180

28 50

70 135

TJ = 25°C 1.5 2.5

TJ = 150°C 1.3

60

39

21

0.13 nC

V

pF

nC

ns

V

ns

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2

40

35

30

25

20

15

, DRAIN CURRENT (A)

10

D

−I

VGS = −10 V

VGS = −9 V

VGS = −8 V

VGS = −7 V

5

0

012345678910

−V

DS

Figure 1. On−Region Characteristics

NTD20P06L, NTDV20P06L

TYPICAL PERFORMANCE CURVES

(TJ = 25°C unless otherwise noted)

VGS = −6 V

VGS = −5.5 V

VGS = −5 V

VGS = −4.5 V

VGS = −4 V

VGS = −3.5 V

VGS = −3 V

TJ = 25°C

, DRAIN−TO−SOURCE VOLTAGE (V)

40

TJ = −55°C

30

TJ = 25°C

20

, DRAIN CURRENT (A)

10

D

−I

0

0123456789

, GATE−TO−SOURCE VOLTAGE (V)

−V

DS

TJ = 125°C

VDS w 10 V

Figure 2. Transfer Characteristics

0.5

VGS = −5 V

0.45

0.4

0.35

0.3

(W)

, DRAIN−TO−SOURCE RESISTANCE

DS(on)

R

0.25

0.2

0.15

0.1

0.05

0

0 5 10 15 20 25 30

TJ = 125°C

TJ = 25°C

TJ = −55°C

−ID, DRAIN CURRENT (A)

Figure 3. On−Resistance versus Drain Current

and Temperature

2

1.8

ID = −7.5 A
V

= −5 V

GS

1.6

1.4

1.2

1

0.8

0.6

(NORMALIZED)

0.4

0.2

, DRAIN−TO−SOURCE RESISTANCE

0

DS(on)

−50 −25 0 25 50 75 100 125 150

R

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

0.25

0.225

0.175

0.125

0.075

0.025

, DRAIN−TO−SOURCE RESISTANCE (W)

DS(on)

R

TJ = 25°C

0.2

0.15

0.1

0.05

0

0 3 6 9 12 15 18 21 24

VGS = −5 V

VGS = −10 V

−ID, DRAIN CURRENT (A)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

10000

, LEAKAGE (nA)

D

−I

VGS = 0 V

1000

100

10

1

5 1015202530354045505560

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 150°C

TJ = 125°C

Figure 6. Drain−to−Source Leakage Current

versus Voltage

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