ON NSQA12VAW5T2, NSQA6V8AW5T2 Schematic [ru]
NSQA6V8AW5T2 Series
Transient Voltage Suppressor
ESD Protection Diode with Low Clamping
Voltage
This integrated transient voltage suppressor device (TVS) is
designed for applications requiring transient overvoltage protection. It
is intended for use in sensitive equipment such as computers, printers,
business machines, communication systems, medical equipment, and
other applications. Its integrated design provides very effective and
reliable protection for four separate lines using only one package.
These devices are ideal for situations where board space is at a premium.
Features
• Low Clamping Voltage
• Small SC−88A SMT Package
• Stand Off Voltage: 5 V
• Low Leakage Current < 1 mA
• Four Separate Unidirectional Configurations for Protection
• ESD Protection: IEC61000−4−2: Level 4
MILSTD 883C − Method 3015−6: Class 3
• Pb−Free Packages are Available
Benefits
• Provides Protection for ESD Industry Standards: IEC 61000, HBM
• Minimize Power Consumption of the System
• Minimize PCB Board Space
Typical Applications
• Instrumentation Equipment
• Serial and Parallel Ports
• Microprocessor Based Equipment
• Notebooks, Desktops, Servers
• Cellular and Portable Equipment
MAXIMUM RATINGS (T
Rating Symbol Value Unit
Peak Power Dissipation
8 20 msec Double Exponential
Waveform (Note 1)
Steady State Power − 1 Diode (Note
2)
Thermal Resistance −
Junction−to−Ambient
Above 25°C, Derate
Operating Junction Temperature
Range
Storage Temperature Range T
Lead Solder Temperature − Maximum
10 Seconds Duration
IEC ^1000−4−2 (ESD) Contact $8.0 kV
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Non−repetitive current pulse per Figure 6.
2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%.
Mounted on FR4 board with min pad.
See Application Note AND8308/D for further description of survivability specs.
= 25°C unless otherwise noted)
A
P
PK
P
D
R
q
JA
T
−40 to +125 °C
J
−55 to +150 °C
stg
T
L
20 W
380 mW
327
3.05
260 °C
°C/W
mW/°C
NSQA6V8AW5T2 SC−88A 3000/Tape & Reel
NSQA6V8AW5T2G SC−88A
NSQA12VAW5T2 3000/Tape & ReelSC−88A
NSQA12VAW5T2G 3000/Tape & ReelSC−88A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
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2
3
SC−88A/SOT−323
CASE 419A
5
4
MARKING DIAGRAM
45
6x MG
G
132
x = H for NSQA6V8AW5T2
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
X for NSQA12VAW5T2
ORDERING INFORMATION
Device Package Shipping
(Pb−Free)
(Pb−Free)
3000/Tape & Reel
†
© Semiconductor Components Industries, LLC, 2009
September, 2009 − Rev. 5
1 Publication Order Number:
NSQA6V8AW5T2/D
NSQA6V8AW5T2 Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol Parameter
I
V
V
RWM
V
P
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T
NSQA6V8AW5T2
Breakdown Voltage (IT = 1 mA) (Note 3) V
Leakage Current (V
Clamping Voltage 1 (IPP = 1.6 A) (Note 4) V
Maximum Peak Pulse Current (Note 4) I
Junction Capacitance − (VR = 0 V, f = 1 MHz)
Clamping Voltage − Per IEC61000−4−2 V
NSQA12VAW5T2
Breakdown Voltage (IT = 5 mA) (Note 3) V
Leakage Current (V
Zener Impedence (IT = 5 mA) Z
Clamping Voltage 1 (IPP = 0.9 A) (Note 4) V
Maximum Peak Pulse Current (Note 4) I
Junction Capacitance − (VR = 0 V, f = 1 MHz) C
Clamping Voltage − Per IEC61000−4−2 (Note 5) V
3. VBR is measured at pulse test current IT.
4. Surge current waveform per Figure 5.
5. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
Maximum Reverse Peak Pulse Current
PP
Clamping Voltage @ I
C
PP
Working Peak Reverse Voltage
I
I
I
V
Maximum Reverse Leakage Current @ V
R
Breakdown Voltage @ I
BR
Test Current
T
Forward Current
F
Forward Voltage @ I
F
Peak Power Dissipation
pk
F
T
C Capacitance @ VR = 0 and f = 1.0 MHz
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
= 5.0 V) I
RWM
− (VR = 3.0 V, f = 1 MHz)
= 9.0 V) I
RWM
RWM
VCV
BR
R
C
PP
C
J
C
BR
R
Z
C
PP
J
C
I
I
F
V
RWM
BR
I
V
R
F
I
T
I
PP
Uni−Directional
6.4 6.8 7.1 V
− − 1.0
− − 13 V
− − 1.6 A
−
−
11.4 12.0 12.7 V
− − 0.05
− − 30
− − 23 V
− − 0.9 A
− − 15 pF
12
6.7
Figures 1 and 2 V
Figures 1 and 2 V
15
9.5
V
mA
pF
mA
W
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NSQA6V8AW5T2 Series
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
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