ON NL17SZ16DFT2, NL17SZ16XV5T2 Schematic [ru]

NL17SZ16

Single Input Buffer

The NL17SZ16 is a single input Buffer in two tiny footprint
packages. The device performs much as LCX multi−gate products in
speed and drive.

Features

• Tiny SOT−353 and SOT−553 Packages

• Source/Sink 24 mA at 3.0 Volts

• Over−Voltage Tolerant Inputs and Outputs

• Chip Complexity: FETs = 20

• Designed for 1.65 V to 5.5 V V

• Pb−Free Packages are Available

Operation

CC

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1

SOT−353/SC70−5/SC−88A

DF SUFFIX

CASE 419A

MARKING

DIAGRAMS

5

LR M G

G

1

NC

1

A

2

3

GND

Figure 1. Pinout (Top View)

A

1

Figure 2. Logic Symbol

5

1

5

V

CC

4

Y

*Date Code orientation and/or position may vary

SOT−553

XV5 SUFFIX

CASE 463B

LR = Device Code
M = Date Code*
G = Pb−Free Package

(Note: Microdot may be in either location)

depending upon manufacturing location.

5

LR M G

G

1

PIN ASSIGNMENT

Pin Function

Y

1
2
3 GND
4
5V

NC

IN A

OUT Y

CC

© Semiconductor Components Industries, LLC, 2007

March, 2007 − Rev. 7

FUNCTION TABLE

A Input Y Output

L

HH

L

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.

1 Publication Order Number:

NL17SZ16/D

NL17SZ16

MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

I

OK

I

OUT

I

CC

I

GND

T

STG

T
T

q

P

MSL Moisture Sensitivity Level 1

F

ESD ESD Classification Human Body Model (Note 3)

I

Latchup

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.

1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.

2. IO Absolute Maximum Rating Must be Obtained.

3. Tested to EIA/JESD22−A114−A, rated to EIA/JESD22−A114−B.

4. Tested to EIA/JESD22−A115−A, rated to EIA/JESD22−A115−A.

5. Tested to JESD22−C101−A.

6. Tested to EIA/JESD78.

DC Supply Voltage *0.5 to )7.0 V

CC

DC Input Voltage Output in High or Low State (Note 2) *0.5 v VI v )7.0 V

I

DC Output Voltage VI < GND *0.5 v VO v )7.0 V

O

DC Input Diode Current VO < GND *50 mA

IK

DC Output Diode Current *50 mA
DC Output Sink Current $50 mA
DC Supply Current per Supply Pin $100 mA
DC Ground per Supply Pin $100 mA
Storage Temperature Range *65 to )150 °C
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C

L

Junction Temperature Under Bias )150 °C

J

Thermal Resistance SOT−353

JA

Power Dissipation in Still Air at 85°C SOT−353

D

Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in

R

SOT−553

SOT−553

350
360

150
180

Class IC

Machine Model (Note 4)

Charged Device Model (Note 5)

Class A

N/A

Latchup Performance Above VCC and Below GND at 85°C (Note 6) $500 mA

°C/W

mW

V

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Min Max Unit

V

V

V

OUT

T

tr, t

DC Supply Voltage Operations Only

CC

DC Input Voltage 0 5.5 V

IN

Data Retention

1.65

1.5

DC Output Voltage 0 5.5 V
Operating Temperature Range *40 )85 °C

A

Input Rise and Fall Time VCC = 2.5 V $0.2 V

f

VCC = 3.0 V $0.3 V
VCC = 5.0 V $0.5 V

0
0
0

5.5

5.5

20
10

5

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2

V

ns/V

NL17SZ16

l

t

l

t

DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES

Junction

Temperature °C

Time, Hours Time, Years

80 1,032,200 117.8

90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0

DC ELECTRICAL CHARACTERISTICS

Symbo

V

IH

V

IL

V

OH

V

OL

I

IN

I

OFF

I

CC

Parameter Condition

High−Level Input Voltage 1.65 to 1.95

Low−Level Input Voltage 1.65 to 1.95

High−Level Output Voltage
VIN = V

or V

IL

IH

IOH = −100 mA
IOH = −3 mA
IOH = −8 mA
IOH = −12 mA
IOH = −16 mA
IOH = −24 mA
IOH = −32 mA

Low−Level Output Voltage
VIN = V

or V

IH

OH

IOL = 100 mA
IOL = 4 mA
IOL = 8 mA
IOL = 12 mA
IOL = 16 mA
IOL = 24 mA

IOL = 32 mA
Input Leakage Current VIN = VCC or GND 0 to 5.5 $0.1 $1.0
Power Off−Output Leakage

Current

V

= 5.5 V 0 1 10

OUT

Quiescent Supply Current VIN = VCC or GND 5.5 1 10

V

CC

(V)

2.3 to 5.5

2.3 to 5.5

1.65 to 5.5

1.65

2.3

2.7

3.0

3.0

4.5

1.65 to 5.5

1.65

2.3

2.7

3.0

3.0

4.5

FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR

= 130°C

= 120°C

= 110°C

= 100°C

= 90°C

J

J

J

T

T

J

T

T

= 80°C

J

J

T

T

1

1 10 100

NORMALIZED FAILURE RATE

TIME, YEARS

1000

Figure 3. Failure Rate vs. Time Junction Temperature

TA = 255C *405C v TA v 855C

Min Typ Max Min Max

0.75 V

CC

0.7 V

CC

VCC − 0.1

1.29

1.9

2.2

2.4

2.3

3.8

V

CC

1.52

2.1

2.4

2.7

2.5

4.0

0.0

0.08

0.20

0.22

0.28

0.38

0.42

0.25 V

0.3 V

0.1

0.24

0.3

0.4

0.4

0.55

0.55

CC

CC

0.75 V

CC

0.7 V

CC

VCC − 0.1

1.29

1.9

2.2

2.4

2.3

3.8

0.25 V

0.3 V

0.1

0.24

0.3

0.4

0.4

0.55

0.55

CC

CC

Uni

V

V

V

V

mA
mA

mA

AC ELECTRICAL CHARACTERISTICS t

Symbo

t

PLH

t

PHL

Parameter Condition

Propagation Delay
(Figure 4 and 5)

= tF = 3.0 ns

R

RL = 1 MW, C

RL = 500 W, C

= 15 pF

L

= 50 pF

L

V

CC

(V)

1.65

1.8

2.5 $ 0.2

3.3 $ 0.3

5.0 $ 0.5

3.3 $ 0.3

5.0 $ 0.5

TA = 255C *405C v TA v 855C

Min Typ Max Min Max

2.0

2.0

0.8

0.5

0.5

1.5

0.8

5.3

4.4

2.9

2.1

1.8

2.9

2.4

11.4

9.5

6.5

4.5

3.9

5.0

4.3

2.0

2.0

0.8

0.5

0.5

1.5

0.8

12
10

7.0

4.7

4.1

5.2

4.5

Uni

ns

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