ON NCP382HD05AA-R2G, NCP382HD10AA-R2G, NCP382HD15AA-R2G, NCP382HMN05A-ATXG, NCP382HMN10A-ATXG Schematic [ru]

NCP382

Fixed Current-Limiting
Power-Distribution
Switches

The NCP382 is a single input dual outputs high side
power−distribution switch designed for applications where heavy
capacitive loads and short−circuits are likely to be encountered. The
device includes an integrated 80 mW, P−channel MOSFET. The
device limits the output current to a desired level by switching into a
constant−current mode when the output load exceeds the current−limit
threshold or a short is present. The current−limit threshold is internally
fixed. The power−switches rise and fall times are controlled to
minimize current ringing during switching.

The FLAG
overtemperature conditions. The switch is controlled by a logic enable
input active high or low.

Features

• 2.5 V – 5.5 V Operating Range

• 80 mW High−Side MOSFET

• Current Limit: Fixed 500 mA, 1 A, 1.5 A and 2 A

• Undervoltage Lock−Out (UVLO)

• Soft−Start Prevents Inrush Current

• Thermal Protection

• Soft Turn−Off

• Enable Active High or Low (EN or EN)

• Compliance to IEC61000−4−2 (Level 4)

♦ 8.0 kV (Contact)
♦ 15 kV (Air)

• UL Listed − File No. E343275

• IEC60950 − Edition 2 − Amendment 1 Certified (CB Scheme)

• These are Pb−Free Devices

Typical Applications

• Laptops

• USB Ports/Hubs

• TVs

logic output asserts low during overcurrent or

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MARKING

DIAGRAMS

1

1

DFN8 3x3

CASE 506BW

8

1

SOIC−8 NB

CASE 751

XXXXX = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.

XXXXX
XXXXX
ALYWG

G

8

XXXXXX

ALYWX

G

1

© Semiconductor Components Industries, LLC, 2012

February, 2012 − Rev. 8

1 Publication Order Number:

NCP382/D

USB INPUT

5V

FLAG1

EN1

FLAG2

EN2

NCP382

IN

Rfault

100 kW

1 mF

FLAG1

EN1

FLAG2

EN2

Figure 1. Typical Application Circuit

OUT1

NCP382

OUT2

GND

120 mF

120 mF

USB

DATA

USB

DATA

D+
D−
VBUS
GND

D+
D−

VBUS

GND

USB
Port

USB
Port

GND

GND

IN

EN1

EN2

1

2

DFN8 SOIC−8

3

4

8

7

6

5

FLAG1

OUT1

OUT2

FLAG2

IN

EN1

EN2

(Top View)

Figure 2. Pin Connections

PIN FUNCTION DESCRIPTION

Pin Name Type Description

EN1 I Enable 1 input, logic low/high (i.e. EN or EN) turns on power switch.

EN2 I Enable 2 input, logic low/high (i.e. EN or EN) turns on power switch.

GND P Ground connection.

IN P

FLAG1 O

FLAG2 O

OUT1 O

OUT2 O

Power−switch input voltage; connect a 1 mF or greater ceramic capacitor from IN to GND as close as possible to
the IC.

Active−low open−drain output 1, asserted during overcurrent or overtemperature conditions. Connect a 10 kW or
greater resistor pull−up, otherwise leave unconnected.

Active−low open−drain output 2, asserted during overcurrent or overtemperature conditions. Connect a 10 kW or
greater resistor pull−up, otherwise leave unconnected.

Power−switch output1; connect a 1 mF ceramic capacitor from OUT1 to GND, as close as possible to the IC.
This minimum value is recommended for USB requirement in terms of load transient response and strong short
circuits.

Power−switch output2; connect a 1 mF ceramic capacitor from OUT2 to GND, as close as possible to the IC.
This minimum value is recommended for USB requirement in terms of load transient response and strong short
circuits.

1

2

3

4

8

FLAG1

7

OUT1

6

OUT2

5

FLAG2

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NCP382

MAXIMUM RATINGS

Rating Symbol Value Unit

From IN to OUT1, From IN to OUT2 Supply Voltage (Note 1) V

IN, OUT1,OUT2, EN1, EN2, FLAG1, FLAG2 (Note 1) V

IN,

FLAG1, FLAG2 sink current I

ESD Withstand Voltage (IEC 61000−4−2) (output only, when
bypassed with 1.0 mF capacitor minimum)

Human Body Model (HBM) ESD Rating are (Note 2) ESD HBM 2000 V

Machine Model (MM) ESD Rating are (Note 2) ESD MM 200 V

Latch−up protection (Note 3)

− Pins IN, OUT1, OUT2, FLAG1

, FLAG2

− EN1, EN2

Maximum Junction Temperature (Note 4) T

Storage Temperature Range T

Moisture Sensitivity (Note 5) MSL Level 1

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.

1. According to JEDEC standard JESD22−A108.

2. This device series contains ESD protection and passes the following tests:

Human Body Model (HBM) +/−2.0 kV per JEDEC standard: JESD22−A114 for all pins.
Machine Model (MM) +/−200 V per JEDEC standard: JESD22−A115 for all pins.

3. Latch up Current Maximum Rating: $100 mA per JEDEC standard: JESD78 class II.

4. A thermal shutdown protection avoids irreversible damage on the device due to power dissipation.

5. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020.

V

IN ,

V

OUT1, VOUT2,

V

FLAG1

OUT1,VOUT2

V

EN1,

, V

FLAG2

SINK

V

EN2,

−7.0 to +7.0 V

−0.3 to +7.0 V

1.0 mA

ESD IEC 15 Air, 8 contact kV

LU

100

J

STG

−40 to + TSD °C

−40 to + 150 °C

mA

OPERATING CONDITIONS

Symbol Parameter Conditions Min Typ Max Unit

V

V

ENX

T

I

SINK

C

C

OUTX

R

q

T

I

OUTX

P

6. A thermal shutdown protection avoids irreversible damage on the device due to power dissipation.

7. The R

final PCB layout.

8. The maximum power dissipation (P

Operational Power Supply 2.5 5.5 V

IN

Enable Voltage 0 5.5

Ambient Temperature Range −40 25 +85 °C

A

FLAG sink current 1 mA

Decoupling input capacitor 1

IN

Decoupling output capacitor USB port per Hub 120

Thermal Resistance Junction−to−Air

JA

DFN−8 package (Notes 6 and 7) 140 °C/W

SOIC−8 package (Notes 6 and 7) 210 °C/W

Junction Temperature Range −40 25 +125 °C

J

Recommended Maximum DC
current

Power Dissipation Rating (Note 8) TA v 25°C

D

DFN−8 package 2 A

SOIC−8 package 1.5 A

DFN−8 package 850 mW

SOIC−8 package 570 mW

TA = 85°C

DFN−8 package 428 mW

SOIC−8 package 285 mW

is dependent of the PCB heat dissipation. Announced thermal resistance is the unless PCB dissipation and can be improve with

q

JA

) is given by the following formula:

D

PD+

T

JMAX

R

qJA

* T

A

mF

mF

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NCP382

ELECTRICAL CHARACTERISTICS Min & Max Limits apply for T

between −40°C to +85°C and TJ up to + 125°C for VIN between

A

2.5 V to 5.5 V (Unless otherwise noted). Typical values are referenced to T

Symbol

Parameter Conditions Min Typ Max Unit

POWER SWITCH

R

DS(on)

R

DS(on)

Static drain−source on−state resistance
(SOIC−8 Package)

Static drain−source on−state resistance
(DFN8 Package)

T

R

Output rise time

TJ = 25°C, VIN = 3.6 V to 5 V 80 11 0

VIN = 5 V –40°C < TJ < 125°C 140

TJ = 25°C, VIN = 3.6 V to 5 V 80 95

VIN = 5 V –40°C < TJ < 125°C 100

VIN = 5 V

VIN = 2.5 V 0.2 0.65 1.0

T

F

Output fall time

VIN = 5 V 0.1 0.5

VIN = 2.5 V 0.1 0.5

ENABLE INPUT ENx OR ENx

High−level input voltage 1.2 V

IH

Low−level input voltage 0.4 V

IL

Input current V

Turn on time

C

LOAD

ENx

= 1 mF, R

Turn off time 1.0 3.0 ms

T

V

V

I

ENx

T

ON

OFF

CURRENT LIMIT

I

OCP

Current−limit threshold (Maximum DC
output current I

delivered to load)

OUTX

VIN = 5 V, Fixed 0.5 A 0.5 0.6 0.7

VIN = 5 V, Fixed 1.0 A 1.0 1.2 1.4

VIN = 5 V, Fixed 1.5 A 1.5 1.75 2.0

VIN = 5 V, Fixed 2 A 2 2.25 2.5

T

T

T

DET

REG

OCP

Response time to short circuit VIN = 5 V 2.0

Regulation time 2.0 3.0 4.0 ms

Over current protection time 14 20 26 ms

UNDERVOLTAGE LOCKOUT

V

UVLO

V

HYST

T

RUVLO

IN pin low−level input voltage VIN rising 2.0 2.35 2.5 V

IN pin hysteresis TJ = 25°C 25 40 60 mV

Re−arming Time VIN rising 5.0 10 15 ms

SUPPLY CURRENT

I

INOFF

I

INON

Low−level output supply current VIN = 5 V, No load on OUTX, Device OFF

V

ENX

High−level output supply current

0.5 A TJ = 25°C

1 and 1.5 A TJ = 25°C

2 A TJ = 25°C

I

REV

Reverse leakage current V

OUTX

V

IN

= 5 V,

= 0 V

FLAG PIN

V

I

LEAK

T

T

FOCP

OL

FLG

FLAGX output low voltage I

Off−state leakage V

FLAGX deglitch FLAGX de−assertion time due to

FLAGX deglitch FLAGX assertion due to overcurrent 6 8 12 ms

THERMAL SHUTDOWN

T

SD

T

SDOCP

T

RSD

9. Parameters are guaranteed for C

10.DFN package only.

Thermal shutdown threshold 140 °C

Thermal regulation threshold 125 °C

Thermal regulation rearming threshold 115 °C

LOAD

and R

connected to the OUTX pin with respect to the ground.

LOAD

11.Guaranteed by characterization.

= + 25°C and VIN = 5 V.

A

R

LOAD

= 0 V, V

LOAD

C

= 1 mF,

LOAD

= 100 W (Note 9)

= 5 V −0.5 0.5

ENx

= 100 W (Note 9)

0.3 1.0 1.5

1.0 3.0 ms

2.0 3.0

= 0 V or V

ENX

T

T

T

J

J

J

= 5 V

= 85°C

= 85°C

= 85°C

TJ = 25°C 1.0 2.0

= 1 mA 400 mV

FLAGX

= 5 V 0.02 1

FLAGX

4 6 9 ms

overcurrent

95

100

115
125

130
140

mW

mW

ms

mA

A

ms

mA

mA

mA

mA

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