ON NCP367DPMEBTBG, NCP367DPMUECTBG, NCP367DPMUEETBG, NCP367DPMUELTBG, NCP367OPMUEATBG Schematic [ru]

...
NCP367
Battery Charge Front-End Protection, USB and AC/DC Supply Compliant
This device uses internal PMOS FET, making external devices unnecessary, which reduces the system cost and PCB area of the application board. First, NCP367 is able to instantaneously disconnect the output from the input if the input voltage exceeds the overvoltage threshold. Additional overcurrent protection function allows turning off internal PMOS FET when the charge current exceeds current limit, which is externally selectable.
Features
Overvoltage Protection Up to + 30 V
Fast Turn Off Time
Very Low Current Consumption/USB Compliant
Li ion Battery Voltage Monitoring
Overvoltage Lockout (OVLO)
Undervoltage Lockout (UVLO)
Overcurrent Protection Externally Adjustable (OCP) up to 2.8 A
Thermal Shutdown
Shutdown EN and Gain Input Pins
Soft−Start to Eliminate Inrush Current
Alert FLAG Output
Compliance to IEC61000−4−2 (Level 4)
8 kV (Contact), 15 kV (Air)
ESD Ratings: Machine Model = B
ESD Ratings: Human Body Model = 2
8 Lead DFN 2.2x2 mm Package
These are Pb−Free Devices
T ypical Application
USB Devices
Mobile Phones
Peripheral
Personal Digital Applications
MP3 Players
www.onsemi.com
8
1
DFN8
MU SUFFIX
CASE 506BP
MARKING DIAGRAM
1
XX MG
G
XX = Specific Device Code M = Date Code G = Pb−Free Device
(Note: Microdot may be in either location)
PIN ASSIGNMENT
IN
1
2
VBAT
NC
ILIM
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the package dimensions section on page 12 of this data sheet.
OUT
3
4
(Top View)
8
7
6
5
GND FLAG GS EN
© Semiconductor Components Industries, LLC, 2015
February, 2015 − Rev . 11
1 Publication Order Number:
NCP367/D
NCP367
Wall Adapter / USB
1 mF
VIN/VUSB
ILIM
GS
NCP367
MCU
1
IN
5
EN
6
GS
GND
8
OUT
FLAG
VBAT
ILIM
9 7 2 4
DCDC
Figure 1. Typical Application Circuit
I limit
+
GAIN
1/2.75
LDO
1 mF
Soft−Start
Driver
B+
Battery Charger
10 k
100 k
Li+ BATTERY
OUT
VBAT
4.35 V
VREF
OVLO
UVLO
GND
EN Pin
Figure 2. Functional Block Diagram
Logic
+
Timer
Thermal
Shutdown
FLAG
www.onsemi.com
2
NCP367
PIN FUNCTION DESCRIPTION
Pin Name Type Description
1 IN POWER Input Voltage Pin. This pin is connected to the power supply: W all Adapter or USB. A 1 mF low ESR
2
V
BAT
INPUT
3 NC OUTPUT Not Connected 4
I
LIM
OUTPUT
5 EN INPUT Enable Mode Pin. The device enters in shutdown mode when this pin is tied to a high level. In this case
6 GS INPUT Gain Select Pin. When the GS pin is tied to 0 level, the Overcurrent threshold is defined by Ilimit set-
7 FLAG OUTPUT Fault Indication Pin. This pin allows an external system to detect fault condition. The FLAG pin goes
8 GND POWER Ground. 9 OUT OUTPUT Output Voltage Pin. This pin follows IN pin when “no input fault” is detected. The output is disconnected
ceramic capacitor, or larger, must be connected between this pin and GND. Li ion Battery voltage sense pin. A serial resistor must be placed between this pin and positive pin of
the battery pack.
Current Limit Pin. This pin provides the reference, based on the internal band−gap voltage reference, to limit the overcurrent, across internal PMOSFET, from IN to OUT. A 1% tolerance, or better, resistor shall be used to get the highest accuracy of the Overcurrent Limit.
the output is disconnected from the input. The state of this pin does not have an impact on the fault detection of the FLAG pin.
ting. See logic table. When GS pin is tied to high, the Overcurrent threshold is set to Ilimit/GS
low when input voltage is below UVLO threshold, exceeds OVLO threshold, charge current from wall adapter to battery exceeds programmed current limit, Li ion Battery voltage (4.3 V) is exceeded or in­ternal temperature exceeds thermal shutdown limit. Since the FLAG pin is open drain functionality, an external pull−up resistor to VBattery must be added (10 kW minimum value).
from the Vin power supply when voltage, current or thermal fault events are detected. A 1 mF low ESR ceramic capacitor, or larger, must be connected between this pin and GND.
NOTE: Pin out provided for concept purpose only and might change in the final product
MAXIMUM RATINGS
Rating Symbol Value Unit
Minimum Voltage (IN to GND) Vmin
in
Minimum Voltage (All others to GND) Vmin −0.3 V Maximum Voltage (IN to GND) Vmax
in
Maximum Voltage (All others to GND) Vmax 7.0 V Maximum DC Current from Vin to V out (PMOS) Imax 3.4 A Thermal Resistance, Junction−to−Air (without PCB area) R Operating Ambient Temperature Range T Storage Temperature Range T Junction Operating Temperature T ESD Withstand Voltage (IEC 61000−4−2)
q
JA A
stg
J
Vesd 15 Air, 8.0 Contact Human Body Model (HBM), Model = 2 (Note 1) Machine Model (MM) Model = B (Note 2)
Latchup LU Class 1 − Moisture Sensitivity MSL Level 1
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. Human Body Model, 100 pF discharged through a 1.5 kW resistor following specification JESD22/A114.
2. Machine Model, 200 pF discharged through all pins following specification JESD22/A115.
−0.3 V
30 V
190 °C/W
−40 to +85 °C
−65 to +150 °C 150 °C
kV
2000
200
V V
www.onsemi.com
3
NCP367
FLAG Output Low Voltage FLAG Leakage Current
EN Leakage Current
FLAG going up Delay
ELECTRICAL CHARACTERISTICS − NCP367OPMUEA
(Min/Max limits values (−40°C < T
Characteristic Symbol Conditions Min Typ Max Unit
Input Voltage Range V Undervoltage Lockout Threshold UVLO Vin falls down UVLO threshold 1.75 1.85 1.9 V Undervoltage Lockout
Hysteresis
Overvoltage Lockout Threshold
NCP367OPMUEA
Overvoltage Lockout Hysteresis OVLO
Vin versus Vout Resistance R
Supply Quiescent Current Idd No Load 42 130 mA Disable Mode Idd Overcurrent Threshold
NCP367OPMUEA
Overcurrent Response I Current Limit Gain
NCP367OPMUEA Battery Overvoltage Threshold OV Battery Overvoltage Hysteresis OV V
Pin Leakage VBAT
BAT
V
Deglitch Time VBAT
BAT
EN Voltage High V EN Voltage Low V
GS Voltage High V GS Voltage Low V GS Leakage Current GS
TIMINGS
Start Up Delay t
Rearming Delay t Overcurrent Regulation Time t
Output Turn Off T ime t
Alert Delay t
Disable Time t Thermal Shutdown Temperature T Thermal Shutdown Hysteresis Tsd
NOTE: Electrical parameters are guaranteed by correlation across the full range of temperature.
< +85°C) and Vin = +3.5 V . Typical values are TA = +25°C, unless otherwise noted.)
A
1.2 28 V
UVLO
in
hyst
OVLO Vin rises up OVLO threshold
3.65 3.8 3.95
hyst
Enable Mode, Load Connected to V
out
EN = 1.2 V 35 110 mA
EN = low, Load Connected to V
R
= 0 W, 1 A/ms, GS = 0.4 V 2.30 2.85 3.40
ilim
1 A/ms, GS = low, I
= 1.51 A 5.0 %
lim
out
,,
GS = 1.2 V
0°C to 85°C 4.3 4.35 4.4 V 0°C to 85°C 100 150 200 mV
V
BAT
> OV
BAT
0.2 2.0 4.0 ms
Vin > OVLO
I
GS
Vol
DS(on)
dis
OCP
reg
value
BAT
HYS
LEAK
DEG
flag
Sink 1 mA on FLAG pin
FLAG
EN
t
start
REARM
REG
ih
leak
ih
leak
on
off
leak
il
il
From Vin > UVLO to V
From V
From Vin > OVLO to V
FLAG level = 5 V 10 nA
1.2 V
1.2 V
= 0.8xV
out
> 0.2xVin to FLAG = 1.2 V 15 30 45 ms
out
in
15 30 45 ms
OCP Active 15 30 45 ms OCP Active 1.2 1.8 3.0 ms
0.3 V, Vin increasing
out
from 3.5 V to 6.5 V at 3 V/ms.
stop
From Vin > OVLO to FLAG 0.4 V, (see Figure 16)
Vin increasing from 3.5 V to 6.5 V at 3 V/ms
dis
From EN 0.4 to 1.2 V to V
sd
hyst
0.3 V 3.0 ms
out
60 100 mV
45 150 mV 50 100 mW
2.55
20 nA
400 mV
0.4 V
200 nA
0.4 V
200 nA
1.5 5.0 ms
1.5 ms
150 °C
30 °C
V
A
www.onsemi.com
4
NCP367
FLAG Output Low Voltage FLAG Leakage Current
EN Leakage Current
FLAG going up Delay
ELECTRICAL CHARACTERISTICS − NCP367DPMUEB
(Min/Max limits values (−40°C < T
Characteristic Symbol Conditions Min Typ Max Unit
Input Voltage Range V Undervoltage Lockout Threshold UVLO Vin falls down UVLO threshold 1.75 1.85 1.9 V Undervoltage Lockout
Hysteresis
Overvoltage Lockout Threshold
NCP367DPMUEB
Overvoltage Lockout Hysteresis OVLO
Vin versus Vout Resistance R
Supply Quiescent Current Idd No Load 42 130 mA Disable Mode Idd Overcurrent Threshold
NCP367DPMUEB
Overcurrent Response I Current Limit Gain
NCP367DPMUEB Battery Overvoltage Threshold OV Battery Overvoltage Hysteresis OV V
Pin Leakage VBAT
BAT
V
Deglitch Time VBAT
BAT
EN Voltage High V EN Voltage Low V
GS Voltage High V GS Voltage Low V GS Leakage Current GS
TIMINGS
Start Up Delay t
Rearming Delay t Overcurrent Regulation Time t
Output Turn Off T ime t
Alert Delay t
Disable Time t Thermal Shutdown Temperature T Thermal Shutdown Hysteresis Tsd
NOTE: Electrical parameters are guaranteed by correlation across the full range of temperature.
< +85°C) and Vin = +4.0 V . Typical values are TA = +25°C, unless otherwise noted.)
A
1.2 28 V
UVLO
in
hyst
OVLO Vin rises up OVLO threshold
4.38 4.54 4.7
hyst
Vin = 5 V , Enable Mode, Load Connected to V
EN = 1.2 V 35 110 mA
Vin = 4.3 V , EN = low, Load Connected to V
R
= 0 W, 1 A/ms, GS = 0.4 V 1.25 1.45 1.80
ilim
1 A/ms, GS = low, I
= 1.51 A 5.0 %
lim
GS = 1.2 V
Vin = 4.2 V , 0°C to 85°C 4.3 4.35 4.4 V Vin = 4.2 V , 0°C to 85°C 100 160 200 mV
Vin = 4.0 V , 20 nA
V
> OV
BAT
BAT
Vin > OVLO
out
out
,,
0.2 2.0 4.0 ms
I
GS
Vol
DS(on)
dis
OCP
reg
value
BAT HYS
LEAK
DEG
flag
Sink 1 mA on FLAG pin
FLAG
EN
t
start
REARM
REG
ih
leak
ih
leak
on
off
leak
il
il
From Vin > UVLO to V
From V
From Vin > OVLO to V
FLAG level = 5 V 10 nA
1.2 V
1.2 V
= 0.8xV
out
> 0.2xVin to FLAG = 1.2 V 15 30 45 ms
out
in
15 30 45 ms
OCP Active 15 30 45 ms OCP Active 1.2 1.8 3.0 ms
0.3 V, Vin increasing
out
from 4 V to 7 V at 3 V/ms.
stop
From Vin > OVLO to FLAG 0.4 V, (see Figure 16)
Vin increasing from 4 V to 7 V at 3 V/ms
dis
From EN 0.4 to 1.2 V to V
sd
hyst
0.3 V 3.0 ms
out
60 100 mV
45 100 mV 50 100 mW
2.77
400 mV
0.4 V
200 nA
0.4 V
200 nA
1.5 5.0 ms
1.5 ms
150 °C
30 °C
V
A
www.onsemi.com
5
Loading...
+ 9 hidden pages