ON MMBT3904LT1 Schematic [ru]

MMBT3904LT1
Preferred Device
General Purpose Transistor
NPN Silicon
Pb−Free Packages are Available
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MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V Collector−Base Voltage V Emitter−Base Voltage V Collector Current − Continuous I
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C
Thermal Resistance Junction to Ambient R Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C
Thermal Resistance Junction−to−Ambient R Junction and Storage Temperature TJ, T
1. FR−5 = 1.0  0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
CEO CBO EBO
C
P
D
JA
P
D
JA
stg
40 Vdc 60 Vdc
6.0 Vdc
200 mAdc
225
1.8mWmW/°C 556 °C/W 300
2.4mWmW/°C 417 °C/W
−55 to +150
°C
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAM
3
1
2
SOT−23 (TO−236)
CASE 318
1AM
Style 6
1AM = Specific Device Code
ORDERING INFORMATION
Device Package Shipping
MMBT3904LT1 SOT−23 3000 / Tape & Reel MMBT3904LT1G SOT−23 MMBT3904LT3 SOT−23 10000 / Tape & Reel MMBT3904LT3G SOT−23 10000 / Tape & Reel
3000 / Tape & Reel
Semiconductor Components Industries, LLC, 2004
February, 2004 − Rev. 5
†For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
1 Publication Order Number:
MMBT3904LT1/D
MMBT3904LT1
(
(V
CC
Vdc, V
BE
Vdc
(
(V
CC
Vdc
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
A
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V Collector−Base Breakdown Voltage (IC = 10 Adc, IE = 0) V Emitter−Base Breakdown Voltage (IE = 10 Adc, IC = 0) V
(BR)CEO (BR)CBO (BR)EBO
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) I Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) I
BL
CEX
40 Vdc 60 Vdc
6.0 Vdc
50 nAdc
50 nAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc)
= 1.0 mAdc, VCE = 1.0 Vdc)
(I
C
(I
= 10 mAdc, VCE = 1.0 Vdc)
C
(I
= 50 mAdc, VCE = 1.0 Vdc)
C
(IC = 100 mAdc, VCE = 1.0 Vdc) Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc) (I
= 50 mAdc, IB = 5.0 mAdc)
C
Base−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (I
= 50 mAdc, IB = 5.0 mAdc)
C
H
V
CE(sat)
V
BE(sat)
FE
40 70
100
60 30
0.65
300
0.2
0.3
0.85
0.95
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (I
= 10 mAdc, VCE = 20 Vdc, f = 100 MHz) f
C
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) C Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) C Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) h Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) h Small−Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) h Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) h
T
obo
ibo
ie re fe
oe
300 MHz
4.0 pF
8.0 pF
1.0 10 k ohms
0.5 8.0 X 10
100 400
1.0 40 mhos
Noise Figure (VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k ohms, f = 1.0 kHz) NF 5.0 dB
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time
V
= 3.0 Vdc, V
= 3.0
= −0.5 Vdc,
= −0.5
IC = 10 mAdc, IB1 = 1.0 mAdc)
V
= 3.0 Vdc,
= 3.0
,
IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
t
,
d
t
r
t
s
t
f
35
35
200
50
3. Pulse Test: Pulse Width  300 s, Duty Cycle 2.0%.
Vdc
Vdc
−4
ns
ns
DUTY CYCLE = 2% 300 ns
−0.5 V
+10.9 V
< 1 ns
10 k
+3 V
275
C
S
< 4 pF*
10 < t
< 500 s
1
DUTY CYCLE = 2%
0
−9.1 V
t
1
+10.9 V
10 k
1N916
< 1 ns
+3 V
275
C
< 4 pF*
S
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
http://onsemi.com
2
10
7.0
5.0
3.0
CAPACITANCE (pF)
2.0
1.0
0.1
C
0.2 0.3 0.5 0.7
1.0 2.0 3.0 5.0 7.0 10 20
REVERSE BIAS VOLTAGE (VOLTS)
MMBT3904LT1
TYPICAL TRANSIENT CHARACTERISTICS
T
= 25°C
J
T
= 125°C
J
5000
3000
2000
1000
ibo
C
obo
30 40
700
500
300
Q, CHARGE (pC)
200
100
70 50
1.0
VCC = 40 V I
= 10
C/IB
Q
T
Q
A
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitance
500
300 200
100
70
50
30
TIME (ns)
20
10
7
1.0 2.0 3.0 10 20
5.0 7.0 30 50
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn−On Time
500
300
IC/IB = 20
200
100
70
50
30 20
s
t , STORAGE TIME (ns)
10
7
1.0 2.0 3.0 10 20
IC/IB = 10
5.0 7.0 30 50
IC, COLLECTOR CURRENT (mA)
td @ VOB = 0 V
IC/IB = 10
tr @ VCC = 3.0 V
40 V
15 V
2.0 V
705100
t
= ts − 1/8 t
s
I
= I
B1
B2
IC/IB = 20
IC/IB = 10
705100
Figure 4. Charge Data
500
300 200
VCC = 40 V I
= 10
C/IB
100
70
50
30
r
20
t , RISE TIME (ns)
10
7
200
1.0 2.0 3.0 10 20
5.0 7.0 30 50
705100
200
IC, COLLECTOR CURRENT (mA)
Figure 6. Rise Time
500
f
300 200
IC/IB = 20
100
70 50
30
f
t , FALL TIME (ns)
20
IC/IB = 10
10
7
200
1.0 2.0 3.0 10 20
5.0 7.0
30 50
IC, COLLECTOR CURRENT (mA)
VCC = 40 V I
= I
B1
B2
705100
200
Figure 7. Storage Time
Figure 8. Fall Time
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3
MMBT3904LT1
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
10
8
6
4
NF, NOISE FIGURE (dB)
2
0
300
200
SOURCE RESISTANCE = 200 I
= 1.0 mA
C
SOURCE RESISTANCE = 500 I
= 100 A
C
0.1
0.2 0.4
SOURCE RESISTANCE = 200 I
= 0.5 mA
C
SOURCE RESISTANCE = 1.0 k I
= 50 A
C
1.0 2.0 4.0 10 20
f, FREQUENCY (kHz)
Figure 9.
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
NF, NOISE FIGURE (dB)
40
100
h PARAMETERS
14
f = 1.0 kHz
12
10
8
6
4
2
0
0.1 1.0 2.0 4.0 10 20
0.2 0.4
IC = 1.0 mA
IC = 0.5 mA
RS, SOURCE RESISTANCE (k OHMS)
Figure 10.
100
50
20
IC = 50 A
IC = 100 A
40
100
100
70
fe
h , CURRENT GAIN
50
30
0.1 0.2 1.0 2.0
0.3 0.5 3.0 IC, COLLECTOR CURRENT (mA)
Figure 11. Current Gain
20
10
5.0
2.0
1.0
ie
0.5
h , INPUT IMPEDANCE (k OHMS)
0.2
0.1 0.2 1.0 2.0
0.3 0.5 3.0 IC, COLLECTOR CURRENT (mA)
5.0 10
5.0 10
10
5
oe
h , OUTPUT ADMITTANCE ( mhos)
2
1
0.1 0.2 1.0 2.0
0.3 0.5 3.0 IC, COLLECTOR CURRENT (mA)
Figure 12. Output Admittance
10
−4
7.0
5.0
3.0
2.0
1.0
0.7
re
h , VOLTAGE FEEDBACK RATIO (X 10 )
0.5
0.1 0.2 1.0 2.0
0.3 0.5 3.0 IC, COLLECTOR CURRENT (mA)
5.0 10
5.0
10
Figure 13. Input Impedance
Figure 14. V oltage Feedback Ratio
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4
MMBT3904LT1
TYPICAL STATIC CHARACTERISTICS
2.0
1.0
0.7
0.5
0.3
0.2
FE
h , DC CURRENT GAIN (NORMALIZED)
0.1
0.1
1.0
0.8
0.6
0.4
0.2 0.3
IC = 1.0 mA
T
= +125°C
J
+25°C
−55 °C
0.5 2.0 3.0 10 50
1.00.7
IC, COLLECTOR CURRENT (mA)
30205.0 7.0
Figure 15. DC Current Gain
10 mA 30 mA 100 mA
70
VCE = 1.0 V
100
T
= 25°C
J
200
0.2
CE
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0
1.2 T
= 25°C
J
1.0
0.8
0.6
0.4
V, VOLTAGE (VOLTS)
0.2
1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 17. “ON” Voltages
V
CE(sat)
0.1
0.070.050.030.020.01
IB, BASE CURRENT (mA)
0.5 2.0 3.0 100.2 0.3
Figure 16. Collector Saturation Region
1.0
V
@ IC/IB =10
BE(sat)
VBE @ VCE =1.0 V
@ IC/IB =10
500100
200
0.5
°
0
−0.5
−1.0
COEFFICIENT (mV/ C)
−1.5
−2.0 0 60 80 120 140 160
1.00.7 5.0 7.0
+25°C TO +125°C
VC FOR V
VB FOR V
20 40
CE(sat)
−55 °C TO +25°C
−55 °C TO +25°C
+25°C TO +125°C
BE(sat)
100
IC, COLLECTOR CURRENT (mA)
Figure 18. Temperature Coefficients
180
200
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5
MMBT3904LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AH
A
L
3
1
2
GV
D
S
B
C
H
K
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD 318−08.
INCHES
DIMAMIN MAX MIN MAX
0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
MILLIMETERS
SOLDERING FOOTPRINT*
0.95
0.95
0.037
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
SCALE 10:1
inches
Figure 19. SOT−23
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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MMBT3904LT1/D
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