ON MMBT3904LT1 Schematic [ru]

MMBT3904LT1

Preferred Device

General Purpose Transistor

NPN Silicon

Features

• Pb−Free Packages are Available

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MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current − Continuous I

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board
(Note 1) TA = 25°C
Derate above 25°C

Thermal Resistance Junction to Ambient R
Total Device Dissipation

Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C

Thermal Resistance Junction−to−Ambient R
Junction and Storage Temperature TJ, T

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

CEO
CBO
EBO

C

P

D



JA

P

D



JA

stg

40 Vdc
60 Vdc

6.0 Vdc

200 mAdc

225

1.8mWmW/°C
556 °C/W
300

2.4mWmW/°C
417 °C/W

−55 to
+150

°C

COLLECTOR

3

1

BASE

2

EMITTER

MARKING
DIAGRAM

3

1

2

SOT−23 (TO−236)

CASE 318

1AM

Style 6

1AM = Specific Device Code

ORDERING INFORMATION

Device Package Shipping

MMBT3904LT1 SOT−23 3000 / Tape & Reel
MMBT3904LT1G SOT−23
MMBT3904LT3 SOT−23 10000 / Tape & Reel
MMBT3904LT3G SOT−23 10000 / Tape & Reel

3000 / Tape & Reel

†

 Semiconductor Components Industries, LLC, 2004

February, 2004 − Rev. 5

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

Preferred devices are recommended choices for future use
and best overall value.

1 Publication Order Number:

MMBT3904LT1/D

MMBT3904LT1

(

(V

CC

Vdc, V

BE

Vdc

(

(V

CC

Vdc

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

A

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V
Collector−Base Breakdown Voltage (IC = 10 Adc, IE = 0) V
Emitter−Base Breakdown Voltage (IE = 10 Adc, IC = 0) V

(BR)CEO
(BR)CBO
(BR)EBO

Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) I
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) I

BL

CEX

40 − Vdc
60 − Vdc

6.0 − Vdc

− 50 nAdc

− 50 nAdc

ON CHARACTERISTICS (Note 3)

DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)

= 1.0 mAdc, VCE = 1.0 Vdc)

(I

C

(I

= 10 mAdc, VCE = 1.0 Vdc)

C

(I

= 50 mAdc, VCE = 1.0 Vdc)

C

(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)
(I

= 50 mAdc, IB = 5.0 mAdc)

C

Base−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(I

= 50 mAdc, IB = 5.0 mAdc)

C

H

V

CE(sat)

V

BE(sat)

FE

40
70

100

60
30

−

−

0.65

−

−

−

300

−

−

0.2

0.3

0.85

0.95

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (I

= 10 mAdc, VCE = 20 Vdc, f = 100 MHz) f

C

Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) C
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) C
Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) h
Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) h
Small−Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) h
Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) h

T

obo

ibo

ie
re
fe

oe

300 − MHz

− 4.0 pF

− 8.0 pF

1.0 10 k ohms

0.5 8.0 X 10

100 400 −

1.0 40 mhos

Noise Figure (VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k ohms, f = 1.0 kHz) NF − 5.0 dB

SWITCHING CHARACTERISTICS

Delay Time
Rise Time
Storage Time
Fall Time

V

= 3.0 Vdc, V

= 3.0

= −0.5 Vdc,

= −0.5

IC = 10 mAdc, IB1 = 1.0 mAdc)

V

= 3.0 Vdc,

= 3.0

,

IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)

t

,

d

t

r

t

s

t

f

− 35

− 35

− 200

− 50

3. Pulse Test: Pulse Width  300 s, Duty Cycle  2.0%.

−

Vdc

Vdc

−4

ns

ns

DUTY CYCLE = 2%
300 ns

−0.5 V

+10.9 V

< 1 ns

10 k

+3 V

275

C

S

< 4 pF*

10 < t

< 500 s

1

DUTY CYCLE = 2%

0

−9.1 V′

t

1

+10.9 V

10 k

1N916

< 1 ns

+3 V

275

C

< 4 pF*

S

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time

Equivalent Test Circuit

Figure 2. Storage and Fall Time

Equivalent Test Circuit

http://onsemi.com

2

10

7.0

5.0

3.0

CAPACITANCE (pF)

2.0

1.0

0.1

C

0.2 0.3 0.5 0.7

1.0 2.0 3.0 5.0 7.0 10 20

REVERSE BIAS VOLTAGE (VOLTS)

MMBT3904LT1

TYPICAL TRANSIENT CHARACTERISTICS

T

= 25°C

J

T

= 125°C

J

5000

3000

2000

1000

ibo

C

obo

30 40

700

500

300

Q, CHARGE (pC)

200

100

70
50

1.0

VCC = 40 V
I

= 10

C/IB

Q

T

Q

A

2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitance

500

300
200

100

70

50

30

TIME (ns)

20

10

7

1.0 2.0 3.0 10 20

5.0 7.0 30 50

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn−On Time

500

300

IC/IB = 20

200

100

70

50

30
20

′

s

t , STORAGE TIME (ns)

10

7

1.0 2.0 3.0 10 20

IC/IB = 10

5.0 7.0 30 50

IC, COLLECTOR CURRENT (mA)

td @ VOB = 0 V

IC/IB = 10

tr @ VCC = 3.0 V

40 V

15 V

2.0 V

705100

t′

= ts − 1/8 t

s

I

= I

B1

B2

IC/IB = 20

IC/IB = 10

705100

Figure 4. Charge Data

500

300
200

VCC = 40 V
I

= 10

C/IB

100

70

50

30

r

20

t , RISE TIME (ns)

10

7

200

1.0 2.0 3.0 10 20

5.0 7.0 30 50

705100

200

IC, COLLECTOR CURRENT (mA)

Figure 6. Rise Time

500

f

300
200

IC/IB = 20

100

70
50

30

f

t , FALL TIME (ns)

20

IC/IB = 10

10

7

200

1.0 2.0 3.0 10 20

5.0 7.0

30 50

IC, COLLECTOR CURRENT (mA)

VCC = 40 V
I

= I

B1

B2

705100

200

Figure 7. Storage Time

Figure 8. Fall Time

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3