ON MMBT3904LT1 Schematic [ru]

MMBT3904LT1

Preferred Device

General Purpose Transistor

NPN Silicon

Features

• Pb−Free Packages are Available

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MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current − Continuous I

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board
(Note 1) TA = 25°C
Derate above 25°C

Thermal Resistance Junction to Ambient R
Total Device Dissipation

Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C

Thermal Resistance Junction−to−Ambient R
Junction and Storage Temperature TJ, T

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

CEO
CBO
EBO

C

P

D



JA

P

D



JA

stg

40 Vdc
60 Vdc

6.0 Vdc

200 mAdc

225

1.8mWmW/°C
556 °C/W
300

2.4mWmW/°C
417 °C/W

−55 to
+150

°C

COLLECTOR

3

1

BASE

2

EMITTER

MARKING
DIAGRAM

3

1

2

SOT−23 (TO−236)

CASE 318

1AM

Style 6

1AM = Specific Device Code

ORDERING INFORMATION

Device Package Shipping

MMBT3904LT1 SOT−23 3000 / Tape & Reel
MMBT3904LT1G SOT−23
MMBT3904LT3 SOT−23 10000 / Tape & Reel
MMBT3904LT3G SOT−23 10000 / Tape & Reel

3000 / Tape & Reel

†

 Semiconductor Components Industries, LLC, 2004

February, 2004 − Rev. 5

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

Preferred devices are recommended choices for future use
and best overall value.

1 Publication Order Number:

MMBT3904LT1/D

MMBT3904LT1

(

(V

CC

Vdc, V

BE

Vdc

(

(V

CC

Vdc

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

A

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V
Collector−Base Breakdown Voltage (IC = 10 Adc, IE = 0) V
Emitter−Base Breakdown Voltage (IE = 10 Adc, IC = 0) V

(BR)CEO
(BR)CBO
(BR)EBO

Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) I
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) I

BL

CEX

40 − Vdc
60 − Vdc

6.0 − Vdc

− 50 nAdc

− 50 nAdc

ON CHARACTERISTICS (Note 3)

DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)

= 1.0 mAdc, VCE = 1.0 Vdc)

(I

C

(I

= 10 mAdc, VCE = 1.0 Vdc)

C

(I

= 50 mAdc, VCE = 1.0 Vdc)

C

(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)
(I

= 50 mAdc, IB = 5.0 mAdc)

C

Base−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(I

= 50 mAdc, IB = 5.0 mAdc)

C

H

V

CE(sat)

V

BE(sat)

FE

40
70

100

60
30

−

−

0.65

−

−

−

300

−

−

0.2

0.3

0.85

0.95

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (I

= 10 mAdc, VCE = 20 Vdc, f = 100 MHz) f

C

Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) C
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) C
Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) h
Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) h
Small−Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) h
Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) h

T

obo

ibo

ie
re
fe

oe

300 − MHz

− 4.0 pF

− 8.0 pF

1.0 10 k ohms

0.5 8.0 X 10

100 400 −

1.0 40 mhos

Noise Figure (VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k ohms, f = 1.0 kHz) NF − 5.0 dB

SWITCHING CHARACTERISTICS

Delay Time
Rise Time
Storage Time
Fall Time

V

= 3.0 Vdc, V

= 3.0

= −0.5 Vdc,

= −0.5

IC = 10 mAdc, IB1 = 1.0 mAdc)

V

= 3.0 Vdc,

= 3.0

,

IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)

t

,

d

t

r

t

s

t

f

− 35

− 35

− 200

− 50

3. Pulse Test: Pulse Width  300 s, Duty Cycle  2.0%.

−

Vdc

Vdc

−4

ns

ns

DUTY CYCLE = 2%
300 ns

−0.5 V

+10.9 V

< 1 ns

10 k

+3 V

275

C

S

< 4 pF*

10 < t

< 500 s

1

DUTY CYCLE = 2%

0

−9.1 V′

t

1

+10.9 V

10 k

1N916

< 1 ns

+3 V

275

C

< 4 pF*

S

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time

Equivalent Test Circuit

Figure 2. Storage and Fall Time

Equivalent Test Circuit

http://onsemi.com

2

10

7.0

5.0

3.0

CAPACITANCE (pF)

2.0

1.0

0.1

C

0.2 0.3 0.5 0.7

1.0 2.0 3.0 5.0 7.0 10 20

REVERSE BIAS VOLTAGE (VOLTS)

MMBT3904LT1

TYPICAL TRANSIENT CHARACTERISTICS

T

= 25°C

J

T

= 125°C

J

5000

3000

2000

1000

ibo

C

obo

30 40

700

500

300

Q, CHARGE (pC)

200

100

70
50

1.0

VCC = 40 V
I

= 10

C/IB

Q

T

Q

A

2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitance

500

300
200

100

70

50

30

TIME (ns)

20

10

7

1.0 2.0 3.0 10 20

5.0 7.0 30 50

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn−On Time

500

300

IC/IB = 20

200

100

70

50

30
20

′

s

t , STORAGE TIME (ns)

10

7

1.0 2.0 3.0 10 20

IC/IB = 10

5.0 7.0 30 50

IC, COLLECTOR CURRENT (mA)

td @ VOB = 0 V

IC/IB = 10

tr @ VCC = 3.0 V

40 V

15 V

2.0 V

705100

t′

= ts − 1/8 t

s

I

= I

B1

B2

IC/IB = 20

IC/IB = 10

705100

Figure 4. Charge Data

500

300
200

VCC = 40 V
I

= 10

C/IB

100

70

50

30

r

20

t , RISE TIME (ns)

10

7

200

1.0 2.0 3.0 10 20

5.0 7.0 30 50

705100

200

IC, COLLECTOR CURRENT (mA)

Figure 6. Rise Time

500

f

300
200

IC/IB = 20

100

70
50

30

f

t , FALL TIME (ns)

20

IC/IB = 10

10

7

200

1.0 2.0 3.0 10 20

5.0 7.0

30 50

IC, COLLECTOR CURRENT (mA)

VCC = 40 V
I

= I

B1

B2

705100

200

Figure 7. Storage Time

Figure 8. Fall Time

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3

MMBT3904LT1

TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS

(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

12

10

8

6

4

NF, NOISE FIGURE (dB)

2

0

300

200

SOURCE RESISTANCE = 200 
I

= 1.0 mA

C

SOURCE RESISTANCE = 500 
I

= 100 A

C

0.1

0.2 0.4

SOURCE RESISTANCE = 200 
I

= 0.5 mA

C

SOURCE RESISTANCE = 1.0 k
I

= 50 A

C

1.0 2.0 4.0 10 20

f, FREQUENCY (kHz)

Figure 9.

(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)

NF, NOISE FIGURE (dB)

40

100

h PARAMETERS



14

f = 1.0 kHz

12

10

8

6

4

2

0

0.1 1.0 2.0 4.0 10 20

0.2 0.4

IC = 1.0 mA

IC = 0.5 mA

RS, SOURCE RESISTANCE (k OHMS)

Figure 10.

100

50

20

IC = 50 A

IC = 100 A

40

100

100

70

fe

h , CURRENT GAIN

50

30

0.1 0.2 1.0 2.0

0.3 0.5 3.0
IC, COLLECTOR CURRENT (mA)

Figure 11. Current Gain

20

10

5.0

2.0

1.0

ie

0.5

h , INPUT IMPEDANCE (k OHMS)

0.2

0.1 0.2 1.0 2.0

0.3 0.5 3.0
IC, COLLECTOR CURRENT (mA)

5.0 10

5.0 10

10

5

oe

h , OUTPUT ADMITTANCE ( mhos)

2

1

0.1 0.2 1.0 2.0

0.3 0.5 3.0
IC, COLLECTOR CURRENT (mA)

Figure 12. Output Admittance

10

−4

7.0

5.0

3.0

2.0

1.0

0.7

re

h , VOLTAGE FEEDBACK RATIO (X 10 )

0.5

0.1 0.2 1.0 2.0

0.3 0.5 3.0
IC, COLLECTOR CURRENT (mA)

5.0 10

5.0

10

Figure 13. Input Impedance

Figure 14. V oltage Feedback Ratio

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4

MMBT3904LT1

TYPICAL STATIC CHARACTERISTICS

2.0

1.0

0.7

0.5

0.3

0.2

FE

h , DC CURRENT GAIN (NORMALIZED)

0.1

0.1

1.0

0.8

0.6

0.4

0.2 0.3

IC = 1.0 mA

T

= +125°C

J

+25°C

−55 °C

0.5 2.0 3.0 10 50

1.00.7

IC, COLLECTOR CURRENT (mA)

30205.0 7.0

Figure 15. DC Current Gain

10 mA 30 mA 100 mA

70

VCE = 1.0 V

100

T

= 25°C

J

200

0.2

CE

V , COLLECTOR EMITTER VOLTAGE (VOLTS)

0

1.2
T

= 25°C

J

1.0

0.8

0.6

0.4

V, VOLTAGE (VOLTS)

0.2

1.0 2.0 5.0 10 20

IC, COLLECTOR CURRENT (mA)

Figure 17. “ON” Voltages

V

CE(sat)

0.1

0.070.050.030.020.01

IB, BASE CURRENT (mA)

0.5 2.0 3.0 100.2 0.3

Figure 16. Collector Saturation Region

1.0

V

@ IC/IB =10

BE(sat)

VBE @ VCE =1.0 V

@ IC/IB =10

500100

200

0.5

°

0

−0.5

−1.0

COEFFICIENT (mV/ C)

−1.5

−2.0
0 60 80 120 140 160

1.00.7 5.0 7.0

+25°C TO +125°C

VC FOR V

VB FOR V

20 40

CE(sat)

−55 °C TO +25°C

−55 °C TO +25°C

+25°C TO +125°C

BE(sat)

100

IC, COLLECTOR CURRENT (mA)

Figure 18. Temperature Coefficients

180

200

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5

MMBT3904LT1

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AH

A

L

3

1

2

GV

D

S

B

C

H

K

J

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.

4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.

INCHES

DIMAMIN MAX MIN MAX

0.1102 0.1197 2.80 3.04

B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50

G 0.0701 0.0807 1.78 2.04

H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

MILLIMETERS

SOLDERING FOOTPRINT*

0.95

0.95

0.037

0.037

2.0

0.079

0.9

0.035

0.8

0.031

mm



SCALE 10:1

inches



Figure 19. SOT−23

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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MMBT3904LT1/D