ON MMBT2222AWT1 Schematic [ru]
MMBT2222AWT1
Preferred Device
General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 package which
is designed for low power surface mount applications.
http://onsemi.com
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current – Continuous I
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Thermal Resistance
Junction to Ambient
Junction and Storage Temperature TJ, T
CEO
CBO
EBO
P
R
C
D
JA
–55 to +150 °C
stg
40 Vdc
75 Vdc
6.0 Vdc
600 mAdc
150 mW
833 °C/W
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC–70
CASE 419
STYLE 3
MARKING DIAGRAM
P1 M
Semiconductor Components Industries, LLC, 2001
July, 2001 – Rev. 2
P1 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device Package Shipping
MMBT2222AWT1 SC–70
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
3000/Tape & Reel
MMBT2222AWT1/D
MMBT2222AWT1
(V
CC
Vdc, V
BE
Vdc
(V
CC
Vdc, I
C
150 mAdc
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
A
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (Note 1.)
(IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 10 Adc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
Base Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
ON CHARACTERISTICS (Note 1.)
DC Current Gain (Note 1.)
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
Collector–Emitter Saturation Voltage (Note 1.)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base–Emitter Saturation Voltage (Note 1.)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Small–Signal Current Gain
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Output Admittance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Noise Figure
(VCE = 10 Vdc, IC = 100 Adc, RS = 1.0 k, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
(VCC = 3.0 Vdc, VBE = –0.5 Vdc,
3.0
IC = 150 mAdc, IB1 = 15 mAdc)
(VCC = 30 Vdc, IC = 150 mAdc,
30
IB1 = IB2 = 15 mAdc)
0.5
Symbol Min Max Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
H
FE
V
CE(sat)
V
BE(sat)
f
T
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
NF – 4.0 dB
t
,
,
d
t
r
t
s
t
f
40 – Vdc
75 – Vdc
6.0 – Vdc
– 20 nAdc
– 10 nAdc
35
50
75
100
40
–
–
0.6
–
300 – MHz
– 8.0 pF
– 30 pF
0.25 1.25 k ohms
– 4.0 X 10
75 375 –
25 200 mhos
– 10
– 25
– 225
– 60
–
–
–
300
–
0.3
1.0
1.2
2.0
–
Vdc
Vdc
–4
ns
ns
http://onsemi.com
2
MMBT2222AWT1
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+16 V
0
-2 V
, DC CURRENT GAINV
FE
h
1000
700
500
300
200
100
+30 V
200
CS* < 10 pF
1.0 to 100 µs,
DUTY CYCLE ≈ 2.0%
< 2 ns
1 kΩ
+30 V
200
CS* < 10 pF
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
+16 V
0
-14 V
1.0 to 100 µs,
DUTY CYCLE ≈ 2.0%
< 20 ns
1 k
1N914
-4 V
Figure 1. Turn–On Time Figure 2. Turn–Off Time
70
50
30
20
10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
1.0
0.8
0.6
0.4
0.2
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IB, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700
http://onsemi.com
3
Loading...