ON mESD3.3DT5G, mESD5.0DT5G, mESD6.0DT5G Schematic [ru]
mESD3.3DT5G SERIES
ESD Protection Diodes
In Ultra Small SOT-723 Package
The mESD Series is designed to protect voltage sensitive components
from ESD. Excellent clamping capability, low leakage, and fast response
time, make these parts ideal for ESD protection on designs where board
space is at a premium. Because of its small size, it is suited for use in
cellular phones, portable devices, digital cameras, power supplies and
many other portable applications.
Specification Features:
•Small Body Outline Dimensions:
0.047″ x 0.032″ (1.20 mm x 0.80 mm)
•Low Body Height: 0.020″ (0.5 mm)
•Stand-off Voltage: 3.3 V - 6.0 V
•Low Leakage
•Response Time is Typically < 1 ns
•ESD Rating of Class 3 (> 16 kV) per Human Body Model
•IEC61000-4-2 Level 4 ESD Protection
•IEC61000-4-4 Level 4 EFT Protection
•These are Pb-Free Devices
Mechanical Characteristics:
CASE:
Void‐free, transfer‐molded, thermosetting plastic
Epoxy Meets UL 94 V-0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating Symbol Value Unit
IEC 61000-4-2 (ESD) Air
IEC 61000-4-4 (EFT) 40 A
ESD Voltage Per Human Body Model
Total Power Dissipation on FR-5 Board
(Note 1) @ T
Derate above 25°C
Thermal Resistance Junction-to-Ambient
Junction and Storage Temperature Range TJ, T
Lead Solder Temperature - Maximum
(10 Second Duration)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-5 = 1.0 x 0.75 x 0.62 in.
Per Machine Model
= 25°C
A
Contact
⎪
P
D
R
q
JA
T
L
stg
±30
±30
16
400
240
1.9
525
-55 to
+150
260 °C
mW/°C
kV
kV
V
mW
°C/W
°C
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PIN 1. CATHODE
2. CATHODE
3. ANODE
1
3
2
MARKING
3
2
1
SOT-723
CASE 631AA
STYLE 4
DIAGRAM
xx M
xx = Device Code
M = Date Code
ORDERING INFORMATION
Device Package Shipping
mESDxxDT5G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOT-723 8000/Tape & Reel
†
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the table on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2008
February, 2008 - Rev. 2
1 Publication Order Number:
mESD3.3DT5G/D
mESD3.3DT5G SERIES
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol Parameter
I
V
V
RWM
V
V
P
ELECTRICAL CHARACTERISTICS (T
mESD3.3DT5G
mESD5.0DT5G
mESD6.0DT5G
*Other voltages available upon request.
2. V
Maximum Reverse Peak Pulse Current
PP
Clamping Voltage @ I
C
PP
Working Peak Reverse Voltage
I
Maximum Reverse Leakage Current @ V
R
Breakdown Voltage @ I
BR
I
Test Current
T
I
Forward Current
F
Forward Voltage @ I
F
Peak Power Dissipation
pk
T
F
RWM
C Max. Capacitance @VR = 0 and f = 1 MHz
= 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types)
A
V
(V)
RWM
Max Max Min mA Typ
Device*
Device
Marking
L0 3.3 1.0 5.0 1.0 47
L2 5.0 0.1 6.2 1.0 38
L3 6.0 0.1 7.0 1.0 34
is measured with a pulse test current IT at an ambient temperature of 25°C.
BR
I
(mA) @ V
R
VCV
BR
RWM
I
I
F
V
RWM
I
R
I
T
I
PP
Uni-Directional TVS
VBR (V) @ I
(Note 2)
V
F
T
V
I
C (pF)
T
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2
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