ON MC74VHC1G09DF, MC74VHC1G09DT Schematic [ru]

MC74VHC1G09

2−Input AND Gate with Open Drain Output

The MC74VHC1G09 is a n advanced h igh s peed C MOS 2 −input AND gate with open drain output fabricated with silicon gate CMOS technology . It achieves high speed operation similar to equivalent Bipol ar Schottky TTL while maintaining CMOS low power dissipation.

The internal circuit is composed of three stages, including an open drain output which provid es the capability to set output switching level. This allows the MC74VHC1G09 to be used to interface 5 V circuits to circuits of any voltage between VCC and 7 V using an external resistor and power supply.

The MC74VHC1G09 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.

Features

• High Speed: t

• Low Internal Power Dissipation: I

• Power Down Protection Provided on Inputs

• Pin and Function Compatible with Other Standard Logic Families

• Chip Complexity: FETs = 62; Equivalent Gates = 16

• Pb−Free Packages are Available

= 4.3 ns (Typ) at VCC = 5 V

= 1 mA (Max) at TA = 25°C

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SC−88A / SOT−353 / SC−70

DF SUFFIX

CASE 419A

TSOP−5 / SOT−23 / SC−59

DT SUFFIX

CASE 483

MARKING

DIAGRAMS

VX M G

IN B

IN A

GND

OVT

Figure 1. Pinout (Top View)

IN A IN B

Figure 2. Logic Symbol

OUT Y

VX = Device Code M = Date Code* G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or position may

vary depending upon manufacturing location.

PIN ASSIGNMENT

1 2

3 GND

IN B IN A

OUT Y

FUNCTION TABLE

Inputs Output

L L H H

L L L Z

January, 2007 − Rev. 16

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.

1 Publication Order Number:

MC74VHC1G09/D

MC74VHC1G09

MAXIMUM RATINGS

Symbol Characteristics Value Unit

OUT

T T

MSL Moisture Sensitivity Level 1

ESD

Latchup

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Tested to EIA/JESD22−A114−A

2. Tested to EIA/JESD22−A115−A

3. Tested to JESD22−C101−A

4. Tested to EIA/JESD78

DC Supply Voltage −0.5 to +7.0 V

DC Input Voltage −0.5 to +7.0 V

DC Output Voltage −0.5 to 7.0 V Input Diode Current −20 mA

Output Diode Current +20 mA DC Output Current, per Pin +25 mA DC Supply Current, VCC and GND +50 mA Power dissipation in still air SC−88A, TSOP−5 200 mW

Thermal resistance SC−88A, TSOP−5 333 °C/W

Lead temperature, 1 mm from case for 10 s 260 °C

Junction temperature under bias +150 °C

Storage temperature −65 to +150 °C

stg

Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in

ESD Withstand Voltage Human Body Model (Note 1)

Machine Model (Note 2)

Charged Device Model (Note 3)

> 2000

> 200

N/A

Latchup Performance Above VCC and Below GND at 125°C (Note 4) ±500 mA

RECOMMENDED OPERATING CONDITIONS

Symbol Characteristics Min Max Unit

OUT

tr, t

DC Supply Voltage 2.0 5.5 V

DC Input Voltage 0.0 5.5 V

DC Output Voltage 0.0 7.0 V Operating Temperature Range −55 +125 °C

Input Rise and Fall Time VCC = 3.3 V ± 0.3 V

VCC = 5.0 V ± 0.5 V

0 0

100

Device Junction Temperature versus Time to 0.1% Bond Failures

Junction

Temperature °C

Time, Hours Time, Years

80 1,032,200 117.8

90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0

FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR

= 130 C°

= 110 C°

= 120 C°

NORMALIZED FAILURE RATE

1 10 100

TIME, YEARS

C°

= 80

= 90

= 100 C°

Figure 3. Failure Rate vs. Time

Junction Temperature

ns/V

1000

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DC ELECTRICAL CHARACTERISTICS

ÎÎ

Symbol Parameter Test Conditions

OFF

Minimum High−Level

Input Voltage

Maximum Low−Level

Input Voltage

Maximum Low−Leve

Output Voltage VIN = VIH or V

Maximum Input

Leakage Current Maximum Quiescent

Supply Current Power Off−Output

Leakage Current

VIN = VIH or V IOL = 50 mA

VIN = VIH or V IOL = 4 mA

IOL = 8 mA VIN = 5.5 V or GND 0 to

VIN = VCC or GND 5.5 1.0 20 40

= 5.5 V

OUT

VIN = 5.5 V

MC74VHC1G09

(V)

2.0

3.0

4.5

5.5

2.0

3.0

4.5

5.5

2.0

3.0

4.5

3.0

4.5

5.5

0 0.25 2.5 5

TA = 25°C TA ≤ 85°C −55 ≤ TA ≤ 125°C

Min Typ Max Min Max Min Max

1.5

2.1

3.15

3.85

1.35

1.65

0.0

0.36

0.5

0.9

0.1

1.5

2.1

3.15

3.85

1.5

2.1

3.15

3.85

0.5

0.9

1.35

1.65

0.1

0.44

±0.1 ±1.0 ±1.0

0.5

0.9

1.35

1.65

0.1

0.52

Unit

AC ELECTRICAL CHARACTERISTICS C

ÎÎ

Symbol

PZL

ÎÎ

PLZ

ÎÎ

ООООО

Maximum Output

ООООО

Enable Time, Input A or B to Y

ООООО

Maximum Output Disable Time

ООООО

Maximum Input Ca-

pacitance

ООООО

Parameter

ОООООО

Test Conditions

VCC = 3.3 ± 0.3 V CL = 15 pF

ОООООО

RL = RI = 500 W CL = 50 pF VCC = 5.0 ± 0.5 V CL = 15 pF

RL = RI = 500 W CL = 50 pF

ОООООО

VCC = 3.3 ± 0.3 V CL = 50 pF RL = RI = 500 W

VCC = 5.0 ± 0.5 V CL = 50 pF

ОООООО

RL = RI = 500 W

ООООООÎÎÎÎ

= 50 pF, Input tr = t

load

= 3.0 ns

TA = 25°C

Min

Typ

ÎÎÎ

6.2

8.7

4.3

ÎÎÎ

5.8

8.7

ÎÎÎ

5.8

6.0

Max

8.8

12.3

5.9

7.9

12.3

7.9

TA ≤ 85°C

Min

Max

10.5

ÎÎÎ

14.0

7.0

ÎÎÎ

9.0

14.0

ÎÎÎ

9.0

ÎÎÎ

−55 ≤ TA ≤ 125°C Min

ÎÎÎÎ

Max

12.5

16.5

9.0

ÎÎÎÎ

11.0

16.5

ÎÎÎÎ

11.0

ÎÎÎÎ

Unit

Typical @ 25°C, VCC = 5.0 V

Power Dissipation Capacitance (Note 5)

5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: I power consumption; PD = CPD  V

 fin + ICC  VCC.

= CPD  VCC  fin + ICC. CPD is used to determine the no−load dynamic

)

CC(OPR

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