ON MBT35200MT1 Schematic [ru]
MBT35200MT1
High Current Surface
Mount PNP Silicon
Switching Transistor
for Load Management
in Portable Applications
Features
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
Rating
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage V
Collector Current − Continuous I
Collector Current − Peak I
Electrostatic Discharge ESD HBM Class 3
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
T
= 25°C
A
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
T
= 25°C
A
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Lead #1
Total Device Dissipation
(Single Pulse < 10 sec.)
Junction and Storage
Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR− 4 @ Minimum Pad
2. FR− 4 @ 1.0 X 1.0 inch Pad
3. ref: Figure 9
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
= 25°C)
A
Symbol Max Unit
CEO
CBO
EBO
C
CM
PD (Note 1)
R
(Note 1)
q
JA
PD (Note 2)
R
(Note 2)
q
JA
R
q
JL
P
Dsingle
(Notes 2 & 3) 1.75
TJ, T
stg
−35 Vdc
−55 Vdc
−5.0 Vdc
−2.0 Adc
−5.0 A
MM Class C
625
5.0
200
1.0
8.0
120
80
−55 to
+150
mW
mW/°C
°C/W
W
mW/°C
°C/W
°C/W
W
°C
http://onsemi.com
35 VOLTS
2.0 AMPS
PNP TRANSISTOR
CASE 318G
TSOP−6
STYLE 6
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
MARKING DIAGRAM
G4 MG
G
1
G4 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
MBT35200MT1G TSOP−6
(Pb−Free)
SMBT35200MT1G TSOP−6
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3,000 /
Tape & Reel
3,000 /
Tape & Reel
†
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 5
1 Publication Order Number:
MBT35200MT1/D
MBT35200MT1
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
A
Symbol Min Typical Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
= −10 mAdc, IB = 0)
C
Collector−Base Breakdown Voltage
(I
= −0.1 mAdc, IE = 0)
C
Emitter−Base Breakdown Voltage
(I
= −0.1 mAdc, IC = 0)
E
Collector Cutoff Current
(VCB = −35 Vdc, IE = 0)
Collector−Emitter Cutoff Current
(V
= −35 Vdc)
CES
Emitter Cutoff Current
(V
= −4.0 Vdc)
EB
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CES
I
EBO
−35 −45 −
−55 −65 −
−5.0 −7.0 −
− −0.03 −0.1
− −0.03 −0.1
− −0.01 −0.1
ON CHARACTERISTICS
DC Current Gain (Note 1)
(I
= −1.0 A, VCE = −1.5 V)
C
(IC = −1.5 A, VCE = −1.5 V)
(IC = −2.0 A, VCE = −3.0 V)
Collector−Emitter Saturation Voltage (Note 1)
(I
= −0.8 A, IB = −0.008 A)
C
(IC = −1.2 A, IB = −0.012 A)
(IC = −2.0 A, IB = −0.02 A)
Base −Emitter Saturation Voltage (Note 1)
(I
= −1.2 A, IB = −0.012 A)
C
Base −Emitter Turn−on Voltage (Note 1)
(I
= −2.0 A, VCE = −3.0 V)
C
Cutoff Frequency
(I
= −100 mA, VCE = −5.0 V, f = 100 MHz)
C
Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo − 600 650 pF
Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Cobo − 85 100 pF
Turn−on Time (VCC = −10 V, IB1 = −100 mA, IC = −1 A, RL = 3 W)
Turn−off Time (VCC = −10 V, IB1 = IB2 = −100 mA, IC = 1 A, RL = 3 W)
1. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
h
V
CE(sat)
V
BE(sat)
V
BE(on)
FE
100
100
100
−
−
−
200
200
200
−0.125
−0.175
−0.260
−
400
−
−0.15
−0.20
−0.31
− −0.68 −0.85
− −0.81 −0.875
f
T
t
on
t
off
100 − −
− 35 − nS
− 225 − nS
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
V
V
V
MHz
http://onsemi.com
2
Loading...