ON ESD9R3.3ST5G Schematic [ru]
ESD9R3.3ST5G
Transient Voltage
Suppressors
ESD Protection Diodes with Ultra−Low
Leakage
The ESD9R is designed to provide ESD protection for ASSPs and
ASICs used in ultra low current applications such as human body sensors.
These devices have been designed for leakage under 1 nA from 0°C to
50°C when turned off. During an ESD event, these devices turn on to
clamp the ESD to a safe voltage level for the IC. These devices have the
added benefits of low capacitance for high speed data lines and small
package size for space constrained designs.
Specification Features:
• Ultra−Low Leakage < 1 nA
• Ultra−Low Capacitance 0.5 pF
• Low Clamping Voltage
• Small Body Outline Dimensions:
0.039″ x 0.024″ (1.00 mm x 0.60 mm)
• Low Body Height: 0.016″ (0.4 mm)
• Stand−off Voltage: 3.3 V
• Response Time < 1.0 ns
• IEC61000−4−2 Level 4 ESD Protection
• This is a Pb−Free and Halogen−Free Device
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
Epoxy Meets UL 94 V−0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating Symbol Value Unit
IEC 61000−4−2 (ESD) Contact
HBM
Total Power Dissipation on FR−5 Board
(Note 1) @ T
Storage Temperature Range T
Junction Temperature Range T
Lead Solder Temperature − Maximum
(10 Second Duration)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
= 25°C
A
Air
°PD° 150 mW
stg
J
T
L
±10
±15
±16
−55 to +150 °C
−55 to +125 °C
260 °C
kV
http://onsemi.com
SOD−923
CASE 514AB
MARKING DIAGRAM
J M
J = Specific Device Code
M = Date Code
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device Package Shipping
ESD9R3.3ST5G SOD−923 8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics tables starting on
page 2 of this data sheet.
†
See Application Note AND8308/D for further description of survivability specs.
© Semiconductor Components Industries, LLC, 2008
July, 2008 − Rev. 0
1 Publication Order Number:
ESD9R3.3S/D
ESD9R3.3ST5G
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
V
I
V
RWM
V
V
P
Maximum Reverse Peak Pulse Current
PP
Clamping Voltage @ I
C
Working Peak Reverse Voltage
I
Maximum Reverse Leakage Current @ V
R
Breakdown Voltage @ I
BR
I
Test Current
T
I
Forward Current
F
Forward Voltage @ I
F
Peak Power Dissipation
pk
C Max. Capacitance @ VR = 0 and f = 1.0 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
Parameter
PP
RWM
T
F
VCV
V
RWM
BR
Uni−Directional TVS
I
I
F
I
V
R
F
I
T
I
PP
V
ELECTRICAL CHARACTERISTICS (T
V
RWM
(V)
Device
Device
Marking
Max Max Min mA Typ Max Max
= 25°C unless otherwise noted, VF = 1.0 V Max. @ IF = 10 mA for all types)
A
I
(nA) @ 1 V
R
T
A
to 505C
(Note 4)
= 05C
VBR (V) @ I
(Note 2)
T
I
T
C (pF)
VC (V)
@ I
PP
(Note 5)
= 1 A
V
C
Per IEC61000−4−2
(Note 3)
ESD9R3.3ST5G J* 3.3 1.0 4.8 1.0 0.5 0.9 7.8 Figures 1 and 2
See Below
*Rotated 270°.
2. V
is measured with a pulse test current IT at an ambient temperature of 25°C.
BR
3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
4. Limits over temperature are guaranteed by design, not production tested.
5. V
measured using pulse waveform in Figure 5.
C
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
http://onsemi.com
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
2
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