ON ESD9C3.3ST5G, ESD9C5.0ST5G Schematic [ru]

ESD9C3.3ST5G SERIES
Transient Voltage Suppressors
Micro-Packaged Diodes for ESD Protection
Specification Features:
Low Capacitance 6.2 pF - 13 pF
Low Clamping Voltage
Small Body Outline Dimensions:
0.039 x 0.024 (1.0 mm x 0.60 mm)
Low Body Height: 0.016 (0.40 mm) Max
Stand-off Voltage: 3.3 V, 5 V
Low Leakage
Response Time < 1 ns
ESD Rating of Class 3 (> 16 kV) per Human Body Model
IEC61000-4-2 Level 4 ESD Protection
These are Pb-Free Devices
Mechanical Characteristics:
Void‐free, transfer‐molded, thermosetting plastic
CASE:
Epoxy Meets UL 94 V-0
LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Device Meets MSL 1 Requirements
http://onsemi.com
12
PIN 1. CATHODE
2. ANODE
MARKING DIAGRAM
SOD-923
CASE 514AB
X = Specific Device Code M = Date Code
ORDERING INFORMATION
Device Package Shipping
ESD9CxxST5G SOD-923
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
X M
8000/Tape & Reel
MAXIMUM RATINGS
Rating Symbol Value Unit
IEC 61000-4-2 (ESD) Contact
Total Power Dissipation on FR-5 Board (Note 1) @ TA = 25°C
Junction and Storage Temperature Range
Lead Solder Temperature - Maximum (10 Second Duration)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. FR-5 = 1.0 x 0.75 x 0.62 in.
Air
P
TJ, T
T
D
stg
L
±8.0
±15
150
-55 to +150 °C
260 °C
kV
mW
See specific marking information in the device marking column of the table on page 2 of this data sheet.
See Application Note AND8308/D for further description of survivability specs.
© Semiconductor Components Industries, LLC, 2008
April, 2008 - Rev. 2
1 Publication Order Number:
DEVICE MARKING INFORMATION
ESD9C3.3S/D
ESD9C3.3ST5G SERIES
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol Parameter
I
V
V
RWM
V
V
P
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T
ESD9C3.3ST5G R 3.3 1.0 5.0 1.0 12.8 13
ESD9C5.0ST5G P 5.0 0.5 11.0 1.0 6.0 6.2
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
3. Capacitance at f = 1 MHz, VR = 0 V, TA = 25°C.
4. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
5. ESD9C5.0ST5G shown below. Other voltages available upon request.
Maximum Reverse Peak Pulse Current
PP
Clamping Voltage @ I
C
PP
Working Peak Reverse Voltage
I
Maximum Reverse Leakage Current @ V
R
Breakdown Voltage @ I
BR
I
Test Current
T
I
Forward Current
F
Forward Voltage @ I
F
Peak Power Dissipation
pk
T
F
C Max. Capacitance @VR = 0 and f = 1 MHz
= 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA)
A
I
(mA)
R
@ V
V
Device
Device
Marking
(V)
RWM
Max Max Min mA Typ Max Per IEC61000-4-2 (Note 4)
RWM
RWM
VBR (V) @ I
(Note 2)
V
VCV
BR
RWM
Uni-Directional TVS
T
C (pF)
(Note 3)
I
T
(Note 3)
I
F
C (pF)
I
I
V
R
F
I
T
I
PP
V
V
C
Figures 1 and 2
See Below
(Note 5)
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000-4-2
http://onsemi.com
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000-4-2
2
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