ON ESD7M5.0DT5G Schematic [ru]
ESD7M5.0DT5G
Transient Voltage
Suppressors
ESD Protection Diodes with Ultra−Low
Capacitance
The ESD7M5.0DT5G is designed to protect voltage sensitive
components from damage due to ESD in applications that require ultra
low capacitance to preserve signal integrity. Excellent clamping
capability, low leakage and fast response time are combined with an
ultra low diode capacitance of 2.5 pF to provide best in class
protection from IC damage due to ESD. The ultra small SOT−723
package is ideal for designs where board space is at a premium. The
ESD7M5.0DT5G can be used to protect two uni−directional lines or
one bi−directional line. When used to protect one bi−directional line,
the effective capacitance is 1.25 pF. Because of its low capacitance, it
is well suited for protecting high frequency signal lines such as
USB2.0 high speed and antenna line applications.
Specification Features:
• Low Capacitance 2.5 pF Max
• Low Clamping Voltage
• Small Body Outline Dimensions:
0.047” x 0.047” (1.20 mm x 1.20 mm)
• Low Body Height: 0.020″ (0.5 mm)
• Stand−off Voltage: 5 V
• Low Leakage
• Response Time is Typically < 1.0 ns
• IEC61000−4−2 Level 4 ESD Protection
• This is a Pb−Free Device
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
Epoxy Meets UL 94 V−0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating Symbol Value Unit
IEC 61000−4−2 (ESD) Contact ±10 kV
Total Power Dissipation on FR−5 Board
(Note 1) @ T
Storage Temperature Range T
Junction Temperature Range T
Lead Solder Temperature − Maximum
(10 Second Duration)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
= 25°C
A
See Application Note AND8308/D for further description of survivability specs.
°PD° 150 mW
−55 to +150 °C
stg
−55 to +125 °C
J
T
L
260 °C
PIN 1. CATHODE
ESD7M5.0DT5G SOT−723
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
See specific marking information in the device marking
column of the Electrical Characteristics tables starting on
page 2 of this data sheet.
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1
2. CATHODE
3. ANODE
MARKING DIAGRAM
XX = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device Package Shipping
DEVICE MARKING INFORMATION
2
SOT−723
CASE 631AA
XX M
1
8000/Tape & Reel
(Pb−Free)
3
†
© Semiconductor Components Industries, LLC, 2008
December, 2008 − Rev. 3
1 Publication Order Number:
ESD7M5.0D/D
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
V
I
V
RWM
V
V
P
Maximum Reverse Peak Pulse Current
PP
Clamping Voltage @ I
C
Working Peak Reverse Voltage
I
Maximum Reverse Leakage Current @ V
R
Breakdown Voltage @ I
BR
I
Test Current
T
I
Forward Current
F
Forward Voltage @ I
F
Peak Power Dissipation
pk
C Capacitance @ VR = 0 and f = 1.0 MHz
Parameter
PP
T
F
ESD7M5.0DT5G
RWM
VCV
V
RWM
BR
Uni−Directional TVS
I
I
F
I
V
R
F
I
T
I
PP
V
ELECTRICAL CHARACTERISTICS (T
V
RWM
(V)
= 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types)
A
I
R
@ V
(mA)
RWM
VBR (V)
@ I
T
(Note 2)
I
T
C (pF),
uni−directional
(Note 3)
C (pF),
bi−directional
(Note 4)
VC (V)
@ I
PP
(Note 5)
= 1 A
V
Per
IEC61000−
4−2
(Note 6)
Device
Device
Marking
Max Max Min mA Max Max Max
ESD7M5.0DT5G L7 5.0 1.0 5.4 1.0 2.5 1.25 10.4 Figures 1
and 2
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
3. Uni−directional capacitance at f = 1 MHz, V
4. Bi−directional capacitance at f = 1 MHz, V
5. Surge current waveform per Figure 5.
= 0 V, TA = 25°C (pin1 to pin 3; pin 2 to pin 3).
R
= 0 V, TA = 25°C (pin1 to pin 2).
R
6. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
C
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV contact per IEC 61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV contact per IEC 61000−4−2
http://onsemi.com
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