ON ESD5B5.0ST1G Schematic [ru]

ESD5B5.0ST1G

Transient Voltage
Suppressor

Micro-Packaged Diode for ESD Protection

The ESD5B Series is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size and bi-directional
design, it is ideal for use in cellular phones, MP3 players, and portable
applications that require audio line protection.

Specification Features

•Low Capacitance 32 pF

•Low Clamping Voltage

•Small Body Outline Dimensions: nom 0.063″ x 0.032″ (1.6x0.8 mm)

•Low Body Height: nom 0.024″ (0.6 mm)

•Reverse Working (Stand-off) Voltage: 5.0 V

•Peak Power up to 50 W @ 8 x 20 ms Pulse

•Low Leakage

•Response Time is Typically < 1 ns

•ESD Rating of Class 3 (> 16 kV) per Human Body Model

•IEC61000-4-2 Level 4 ESD Protection

•This is a Pb-Free Device

Mechanical Characteristics

Void‐free, transfer‐molded, thermosetting plastic

CASE:

Epoxy Meets UL 94 V-0

LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260°C

Device Meets MSL 1 Requirements

MAXIMUM RATINGS

Rating Symbol Value Unit

IEC 61000-4-2 (ESD) Contact

ESD Voltage Per Human Body Model

Per Machine Model

Peak Power (Figure 1) Per 8 x 20 ms Waveform
Peak Power (Figure 2)Per 10 x 1000 ms Waveform

Total Power Dissipation on FR-5 Board (Note 1)
@ TA = 25°C

Junction and Storage Temperature Range TJ, T

Lead Solder Temperature - Maximum
(10 Second Duration)

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. FR-5 = 1.0 x 0.75 x 0.62 in.

Air

P

PK

°PD° 200 mW

T

See Application Note AND8308/D for further description of survivability specs.

L

stg

±30
±30

16

400

50
10

-55 to
+150

260 °C

kV

kV

W

°C

V

ESD5B5.0ST1G SOD-523

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

http://onsemi.com

http://onsemi.com

2

1

SOD-523

CASE 502

PLASTIC

MARKING DIAGRAM

G

XX

M

G

12

B5 = Specific Device Code
M Date Code
G = Pb-Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or position may

vary depending upon manufacturing location.

ORDERING INFORMATION

Device Package Shipping

3000/Tape & Reel

(Pb-Free)

†

© Semiconductor Components Industries, LLC, 2008

April, 2008 - Rev. 3

1 Publication Order Number:

ESD5B5.0ST1/D

ESD5B5.0ST1G

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

I

I

PP

Symbol Parameter

I

PP

V

V

RWM

I

V

I

*See Application Note AND8308/D for detailed explanations of

Reverse Peak Pulse Current

Clamping Voltage @ I

C

Working Peak Reverse Voltage

Reverse Leakage Current @ V

R

Breakdown Voltage @ I

BR

Test Current

T

PP

BR

V

RWM

R

I

V

R

RWM

I

T

I

PP

V

V

C

BR

VCV

RWM

T

I

T

I

Bi-Directional TVS

datasheet parameters.

ELECTRICAL CHARACTERISTICS (T

Device*

V

RWM

(V)

Max Max Min Max mA Typ Per IEC61000-4-2 (Note 3)

I

R

@ V

= 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types)

A

(mA)

RWM

VBR (V) @ I

(Note 2)

T

C (pF) @ VR = 0 V,

I

T

f = 1 MHz

V

C

ESD5B5.0ST1G 5.0 1.0 5.8 7.8 1.0 32 Figures 1 and 2

See Below

*Other voltages available upon request.

2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.

3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.

V

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV Contact per IEC 61000-4-2

http://onsemi.com

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV Contact per IEC 61000-4-2

2