ON ESD5B5.0ST1G Schematic [ru]

ESD5B5.0ST1G
Transient Voltage Suppressor
Micro-Packaged Diode for ESD Protection
Specification Features
Low Capacitance 32 pF
Low Clamping Voltage
Small Body Outline Dimensions: nom 0.063 x 0.032(1.6x0.8 mm)
Low Body Height: nom 0.024 (0.6 mm)
Reverse Working (Stand-off) Voltage: 5.0 V
Peak Power up to 50 W @ 8 x 20 ms Pulse
Low Leakage
Response Time is Typically < 1 ns
ESD Rating of Class 3 (> 16 kV) per Human Body Model
IEC61000-4-2 Level 4 ESD Protection
This is a Pb-Free Device
Mechanical Characteristics
Void‐free, transfer‐molded, thermosetting plastic
CASE:
Epoxy Meets UL 94 V-0
LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating Symbol Value Unit
IEC 61000-4-2 (ESD) Contact
ESD Voltage Per Human Body Model
Per Machine Model
Peak Power (Figure 1) Per 8 x 20 ms Waveform Peak Power (Figure 2)Per 10 x 1000 ms Waveform
Total Power Dissipation on FR-5 Board (Note 1) @ TA = 25°C
Junction and Storage Temperature Range TJ, T
Lead Solder Temperature - Maximum (10 Second Duration)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. FR-5 = 1.0 x 0.75 x 0.62 in.
Air
P
PK
°P 200 mW
T
See Application Note AND8308/D for further description of survivability specs.
L
stg
±30 ±30
16
400
50 10
-55 to +150
260 °C
kV
kV
W
°C
V
ESD5B5.0ST1G SOD-523
†For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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2
1
SOD-523
CASE 502
PLASTIC
MARKING DIAGRAM
G
XX
M
G
12
B5 = Specific Device Code M Date Code G = Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device Package Shipping
3000/Tape & Reel
(Pb-Free)
© Semiconductor Components Industries, LLC, 2008
April, 2008 - Rev. 3
1 Publication Order Number:
ESD5B5.0ST1/D
ESD5B5.0ST1G
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
I
I
PP
Symbol Parameter
I
PP
V
V
RWM
I
V
I
*See Application Note AND8308/D for detailed explanations of
Reverse Peak Pulse Current
Clamping Voltage @ I
C
Working Peak Reverse Voltage
Reverse Leakage Current @ V
R
Breakdown Voltage @ I
BR
Test Current
T
PP
BR
V
RWM
R
I
V
R
RWM
I
T
I
PP
V
V
C
BR
VCV
RWM
T
I
T
I
Bi-Directional TVS
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T
Device*
V
RWM
(V)
Max Max Min Max mA Typ Per IEC61000-4-2 (Note 3)
I
R
@ V
= 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types)
A
(mA)
RWM
VBR (V) @ I
(Note 2)
T
C (pF) @ VR = 0 V,
I
T
f = 1 MHz
V
C
ESD5B5.0ST1G 5.0 1.0 5.8 7.8 1.0 32 Figures 1 and 2
See Below
*Other voltages available upon request.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
V
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC 61000-4-2
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Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC 61000-4-2
2
ESD5B5.0ST1G
IEC 61000-4-2 Spec.
Test
Voltage
Level
1 2 7.5 4 2
2 4 15 8 4
3 6 22.5 12 6
4 8 30 16 8
(kV)
ESD Gun
First Peak
Current
(A)
Current at
30 ns (A)
TVS
50 W
Cable
IEC61000-4-2 Waveform
I
peak
Current at
60 ns (A)
Figure 3. IEC61000-4-2 Spec
100%
90%
I @ 30 ns
I @ 60 ns
10%
Oscilloscope
50 W
tP = 0.7 ns to 1 ns
Figure 4. Diagram of ESD Test Setup
The following is taken from Application Note AND8308/D - Interpretation of Datasheet Parameters for ESD Devices.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC61000-4-2 waveform. Since the IEC61000-4-2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND8307/D.
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3
ESD5B5.0ST1G
PACKAGE DIMENSIONS
SOD-523
CASE 502-01
ISSUE C
12
D 2 PL
0.08 (0.003) X Y
M
J
-X-
A
-Y-
B
T
C
K
S
-T-
SEATING PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
DIM MIN NOM MAX
A 1.10 1.20 1.30 B 0.70 0.80 0.90 C 0.50 0.60 0.70 D 0.25 0.30 0.35 J 0.07 0.14 0.20 K 0.15 0.20 0.25 S 1.50 1.60 1.70
MILLIMETERS
INCHES
MIN NOM MAX
0.043 0.047 0.051
0.028 0.032 0.035
0.020 0.024 0.028
0.010 0.012 0.014
0.0028 0.0055 0.0079
0.006 0.008 0.010
0.059 0.063 0.067
SOLDERING FOOTPRINT*
1.40
0.0547
0.40
0.0157
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
0.0157
SCALE 10:1
0.40
ǒ
inches
mm
Ǔ
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ESD5B5.0ST1/D
4
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