ON DF3A6.8FUT1 Schematic [ru]
DF3A6.8FUT1
Preferred Device
Zener Transient Voltage
Suppressor
Dual Common Anode Zeners for ESD
Protection
These dual monolithic silicon zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their d ual junction common
anode design protects two separate lines using only o ne p ackage. T hese
devices are ideal for situations where board space is at a premium.
Features
• Pb−Free Package is Available
• SC−70 Package Allows Two Separate Unidirectional Configurations
• Low Leakage < 1.0 A @ 5.0 V
• Breakdown Voltage: 6.4−7.2 V @ 5.0 mA
• ESD Protection Meeting:16 kV Human Body Model
30 kV Contact = IEC61000−4−2
• Peak Power: 24 W @ 1.0 ms (Unidirectional), per Figure 1
• Peak Power: 150 W @ 20 s (Unidirectional), per Figure 2
Mechanical Characteristics
• Void Free, Transfer−Molded, Thermosetting Plastic Case
• Corrosion Resistant Finish, Easily Solderable
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
MAXIMUM RATINGS
Rating Symbol Value Unit
Steady State Power Dissipation
Derate above 25°C (Note 1)
Thermal Resistance Junction−to−Ambient R
Operating Junction and Storage
Temperature Range
Peak Power Dissipation @ 1.0 ms
(Note 2) @ T
Peak Power Dissipation @ 20 s (Note 3)
= 25°C
@ T
A
ESD Discharge
MIL STD 883C − Method 3015−6
IEC61000−4−2, Air Discharge
IEC61000−4−2, Contact Discharge
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Mounted on FR−5 Board = 1.0 X 0.75 X 0.062 in.
2. Non−repetitive pulse per Figure 1.
3. Non−repetitive pulse per Figure 2.
= 25°C
A
P
TJ, T
P
P
V
stg
200
1.6
618 °C/W
− 55 to
+150
20 W
150 W
16
30
30
D
JA
PK
PK
PP
°mW°
mW/°C
°C
kV
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2
3
MARKING
DIAGRAM
1
2
SC−70/SOT−323
CASE 419
STYLE 4
68
68 = Specific Device Code
M = Date Code
M
ORDERING INFORMATION
Device Package Shipping
DF3A6.8FUT1 SC−70 3000/Tape & Reel
DF3A6.8FUT1G SC−70
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
3000/Tape & Reel
†
Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 1
1 Publication Order Number:
DF3A6.8FUT1/D
DF3A6.8FUT1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
V
RWM
I
V
I
I
V
Z
Z
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
R
Breakdown Voltage @ I
BR
Test Current
T
Forward Current
F
Forward Voltage @ I
F
Maximum Zener Impedance @ I
ZT
Maximum Zener Impedance @ I
ZK
ELECTRICAL CHARACTERISTICS (T
Parameter
T
F
RWM
ZT
ZK
= 25°C unless otherwise noted)
A
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Parameter
Forward Voltage V
Zener Voltage (Note 4) V
Operating Resistance (Note 5) Z
Reverse Current I
Clamping Voltage V
ESD Protection
Human Body Model (HBM)
Contact − IEC61000−4−2
Air Discharge
4. VZ measured at pulse test current IZT at an ambient temperature of 25°C.
5. Z
ZT
and Z
is measured by dividing the AC voltage drop across the device by the AC current supplied. AC frequency = 1.0 kHz.
ZK
Symbol Conditions Min Typ Max Unit
IF = 10 mA 0.8 0.9 V
F
IZT = 5 mA 6.4 6.8 7.2 V
Z
ZK
Z
ZT
R1
IZK = 0.5 mA 200
IZT = 5 mA 50
V
= 5 V 0.5 A
RWM
IPP = 2.0 A (Figure 1)
C
I
= 9.37 A (Figure 2)
PP
VCV
V
RWM
BR
Uni−Directional TVS
I
I
F
I
V
R
F
I
T
I
PP
9.6
16
V
V
V
kV
16
30
30
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