ON DAP202U, DAP222 Schematic [ru]

DAP222, DAP202U
Preferred Device
Common Anode Silicon Dual Switching Diodes
Features
Fast t
Low C
Pb−Free Packages are Available
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
rr
D
MAXIMUM RATINGS (T
Rating Symbol Value Unit
Reverse Voltage V Peak Reverse Voltage V Forward Current I Peak Forward Current I Peak Forward Surge Current
= 25°C)
A
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation P Junction Temperature T Storage Temperature T
FM
I
R
RM
F
(1)
FSM
D J
−55 ~ +150 °C
stg
80 Vdc
80 Vdc 100 mAdc 300 mAdc
2.0 Adc
150 mW 150 °C
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ANODE
3
12
CATHODE
MARKING
DIAGRAMS
3
2
1
3
1
2
P9, NB = Device Codes M = Date Code* G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or orientation may
vary depending upon manufacturing location.
SC−75
CASE 463
STYLE 4
SC−70
CASE 419
P9 M G
1
NB M G
1
ORDERING INFORMATION
Device Package Shipping
G
G
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 5
DAP222 SC−75 3000 / Tape & Reel DAP222G SC−75
(Pb−Free) DAP202U SC−70 3000 / Tape & Reel DAP202UG SC−70
(Pb−Free) DAP222T1 SC−75 3000 / Tape & Reel
DAP222T1G SC−75
(Pb−Free) †For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
1 Publication Order Number:
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
DAP222/D
DAP222, DAP202U
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Condition Min Max Unit
Reverse Voltage Leakage Current I Forward Voltage V Reverse Breakdown Voltage V Diode Capacitance C Reverse Recovery Time DAP222
DAP202U
1. t = 1 mS
2. trr Test Circuit for DAP222 in Figure 4.
3. trr Test Circuit for DAP202U in Figure 5.
TYPICAL ELECTRICAL CHARACTERISTICS
100
TA = 85°C
10
A
R
F R D
trr(2) ttt(3)
= 25°C)
VR = 70 V 0.1
IF = 100 mA 1.2 Vdc
IR = 100 mA
VR = 6.0 V, f = 1.0 MHz 3.5 pF
IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 I
IF = 5.0 mA, VR = 6.0 V, RL = 50 W, Irr = 0.1 I
10
1.0
TA = −40°C
0.1
R
R
TA = 150°C
TA = 125°C
TA = 85°C
mAdc
80 Vdc
4.0
10.0
ns
1.0
, FORWARD CURRENT (mA)
F
I
0.1
0.2 0.4
TA = 25°C
, REVERSE CURRENT (μA)
R
0.01
I
TA = 55°C
TA = 25°C
0.001
0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
1.2
0
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Forward Voltage Figure 2. Reverse Current
1.75
1.5
1.25
, DIODE CAPACITANCE (pF)
1.0
D
C
0.75 0
2468
VR, REVERSE VOLTAGE (VOLTS)
50
Figure 3. Diode Capacitance
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