DAP222, DAP202U
Preferred Device
Common Anode Silicon
Dual Switching Diodes
These Common Anode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. The
DAP222 device is housed in the SC−75/SOT−416 package which is
designed for low power surface mount applications, where board
space is at a premium. The DAP202U device is housed in the
SC−70/SOT−323 package.
Features
• Fast t
• Low C
• Pb−Free Packages are Available
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
rr
D
MAXIMUM RATINGS (T
Rating Symbol Value Unit
Reverse Voltage V
Peak Reverse Voltage V
Forward Current I
Peak Forward Current I
Peak Forward Surge Current
= 25°C)
A
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation P
Junction Temperature T
Storage Temperature T
FM
I
R
RM
F
(1)
FSM
D
J
−55 ~ +150 °C
stg
80 Vdc
80 Vdc
100 mAdc
300 mAdc
2.0 Adc
150 mW
150 °C
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ANODE
3
12
CATHODE
MARKING
DIAGRAMS
3
2
1
3
1
2
P9, NB = Device Codes
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or orientation may
vary depending upon manufacturing location.
SC−75
CASE 463
STYLE 4
SC−70
CASE 419
P9 M G
1
NB M G
1
ORDERING INFORMATION
Device Package Shipping
G
G
†
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 5
DAP222 SC−75 3000 / Tape & Reel
DAP222G SC−75
(Pb−Free)
DAP202U SC−70 3000 / Tape & Reel
DAP202UG SC−70
(Pb−Free)
DAP222T1 SC−75 3000 / Tape & Reel
DAP222T1G SC−75
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
DAP222/D
DAP222, DAP202U
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Condition Min Max Unit
Reverse Voltage Leakage Current I
Forward Voltage V
Reverse Breakdown Voltage V
Diode Capacitance C
Reverse Recovery Time DAP222
DAP202U
1. t = 1 mS
2. trr Test Circuit for DAP222 in Figure 4.
3. trr Test Circuit for DAP202U in Figure 5.
TYPICAL ELECTRICAL CHARACTERISTICS
100
TA = 85°C
10
A
R
F
R
D
trr(2)
ttt(3)
= 25°C)
VR = 70 V − 0.1
IF = 100 mA − 1.2 Vdc
IR = 100 mA
VR = 6.0 V, f = 1.0 MHz − 3.5 pF
IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 I
IF = 5.0 mA, VR = 6.0 V, RL = 50 W, Irr = 0.1 I
10
1.0
TA = −40°C
0.1
R
R
TA = 150°C
TA = 125°C
TA = 85°C
mAdc
80 − Vdc
−
−
4.0
10.0
ns
1.0
, FORWARD CURRENT (mA)
F
I
0.1
0.2 0.4
TA = 25°C
, REVERSE CURRENT (μA)
R
0.01
I
TA = 55°C
TA = 25°C
0.001
0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
1.2
0
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Forward Voltage Figure 2. Reverse Current
1.75
1.5
1.25
, DIODE CAPACITANCE (pF)
1.0
D
C
0.75
0
2468
VR, REVERSE VOLTAGE (VOLTS)
50
Figure 3. Diode Capacitance
http://onsemi.com
2
DAP222, DAP202U
R
A
RECOVERY TIME EQUIVALENT TEST CIRCUIT
Figure 4. Reverse Recovery Time Test Circuit for the DAP222
L
t
r
t
p
I
t
F
10%
90%
V
R
tp = 2 ms
tr = 0.35 ns
INPUT PULSE OUTPUT PULSE
t
rr
Irr = 0.1 I
IF = 5.0 mA
VR = 6 V
RL = 100 W
t
R
R
A
L
RECOVERY TIME EQUIVALENT TEST CIRCUIT
Figure 5. Reverse Recovery Time Test Circuit for the DAP202U
t
r
t
p
I
t
F
10%
90%
V
R
tp = 2 ms
tr = 0.35 ns
INPUT PULSE OUTPUT PULSE
t
rr
Irr = 0.1 I
IF = 5.0 mA
VR = 6 V
RL = 100 W
t
R
http://onsemi.com
3
DAP222, DAP202U
PACKAGE DIMENSIONS
SC−75 (SOT−416)
CASE 463−01
ISSUE F
b
3 PL
0.20 (0.008) D
M
C
−E−
3
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2
e
−D−
1
0.20 (0.008) E
H
E
A
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
DIM MIN NOM MAX
A 0.70 0.80 0.90
A1 0.00 0.05 0.10
b
0.15 0.20 0.30 0.006 0.008 0.012
C 0.10 0.15 0.25
D 1.55 1.60 1.65
E
0.70 0.80 0.90 0.027 0.031 0.035
e 1.00 BSC
L 0.10 0.15 0.20
H
1.50 1.60 1.70
E
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
INCHES
MIN NOM MAX
0.027 0.031 0.035
0.000 0.002 0.004
0.004 0.006 0.010
0.059 0.063 0.067
0.04 BSC
0.004 0.006 0.008
0.061 0.063 0.065
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
ǒ
inches
mm
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
4
DAP222, DAP202U
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE M
0.05 (0.002)
D
e1
3
H
E
12
e
A1
E
b
A
A2
SOLDERING FOOTPRINT*
0.65
0.025
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIMAMIN NOM MAX MIN
A1 0.00 0.05 0.10 0.000
A2 0.7 REF
b 0.30 0.35 0.40 0.012
c 0.10 0.18 0.25 0.004
D 1.80 2.10 2.20 0.071
E 1.15 1.24 1.35 0.045
e 1.20 1.30 1.40 0.047
e1
L
c
H
E
MILLIMETERS
0.80 0.90 1.00 0.032
0.65 BSC
0.425 REF
2.00 2.10 2.40 0.079 0.083 0.095
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.028 REF
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
0.026 BSC
0.017 REF
L
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
ǒ
inches
mm
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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DAP222/D
5
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