ON DAP006 Schematic [ru]

Customer Specific Device from ON Semiconductor

PWM Current−Mode

DAP006

Controller for Free Running Quasi−Resonant Operation

The DAP006 combines a true current mode modulator and a demagnetization detector to ensure full borderline/ critical Conduction Mode in any load/line conditions and minimum drain voltage switching (Quasi−Resonant operation). Due to its inherent skip cycle capability, the controller enters burst mode as soon as the power demand falls below a predetermined level. As this happens at low peak current, no audible noise can be heard. An internal

5.0 s timer prevents the free−run frequency to exceed the 150 kHz CISPR−22 EMI starting limit while the skip adjustment capability lets the user select the frequency at which the burst foldback takes place.

The Dynamic Self−Supply (DSS) drastically simplifies the transformer design in avoiding the use of an auxiliary winding. This feature is particularly useful in applications where the output voltage varies during operation (e.g. battery chargers). Due to its high−voltage technology, the IC is directly connected to the high−voltage DC rail. The DSS also offers a better overload trip point.

The transformer core reset detection is done through an auxiliary winding which, brought via a dedicated pin, also enables fast O v e r− Voltage Protection (OVP). Once an OVP has been detected, the IC permanently latches−off.

Finally, the continuous feedback signal monitoring implemented with an over−current fault protection circuitry (OCP) makes the final design rugged and reliable.

Features

• Free−Running Borderline/Critical Mode

Quasi−Resonant Operation

• Current−Mode with Adjustable Skip−Cycle Capability

• No Auxiliary Winding V

Operation

• Auto−Recovery Over Current Protection

• Latching Over Voltage Protection

• External Latch Triggering, e.g. Via Over−Temperature

Signal

• 500 mA Peak Current Source/Sink Capability

• Internal 4.0 ms Soft−Start

• Internal 5.0 s Minimum T

OFF

• Adjustable Skip Level

• Internal Temperature Shutdown

• Direct Optocoupler Connection

• SPICE Models Available for TRANsient Analysis

Typical Applications

• AC/DC Adapters for Notebooks, etc.

• Offline Battery Chargers

• Consumer Electronics (DVD Players, Set−Top Boxes,

TVs, etc.)

• Auxiliary Power Supplies (USB, Appliances, TVs, etc.)

SO−8

D1, D2 SUFFIX

CASE 751

October, 2005 − Rev. 2

MARKING DIAGRAM

DAP6 ALYW

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 14 of this data sheet.

PIN CONNECTIONS

Dmg

Gnd

(Top View)

1 Publication Order Number:

HV NC

Drv

DAP006/D

DAP006

OVP &

Demag

Universal Network

*Please refer to the application information section

Dmg FB

CS Gnd

Drv

8 7 6 5

Y1 Type

1 2 3 4

12 V @ 1.0 A

Ground

Figure 1. Typical Application

PIN FUNCTION DESCRIPTION

Pin No.

1 Demag Core reset detection and OVP The auxiliary FLYBACK signal ensures discontinuous operation and

2 FB Sets the peak current setpoint By connecting an optocoupler to this pin, the peak current setpoint is

3 CS Current sense input and skip

4 Gnd The IC ground − 5 Drv Driving pulses The driver’s output to an external MOSFET. 6 V 7 NC − This unconnected pin ensures adequate creepage distance. 8 HV High−voltage pin Connected to the high−voltage rail, this pin injects a constant current into

Pin Name

Function

cycle level selection

Supplies the IC

Description

offers a fixed overvoltage detection level of 7.2 V.

adjusted accordingly to the output power demand. By bringing this pin below the internal skip level, device shuts off.

This pin senses the primary current and routes it to the internal comparator via an L.E.B. By inserting a resistor in series with the pin, you control the level at which the skip operation takes place.

This pin is connected to an external bulk capacitor of typically 10 F.

the VCC bulk capacitor.

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DAP006

4.5 s Delay

Ground

OVP

7.0

PON

2.6 V

− +

12 V, 10 V,

5.3 V (fault)

To Internal

Supply

Fault

Mngt.

*S and R are level triggered whereas S is edge

triggered. R has priority over the other inputs.

/2.77

+−

Demag

5.0 s

Blanking

S* R*

Overload?

5.0 s

Timeout

−

Timeout Reset

− +

+ 50 mV

Soft−start = 5.0 ms

1.0 V

Demag

10 V

Driver: src = 20

sink = 10

200 a

when Drv

is OFF

380 ns

L.E.B.

Demag

Drv

Figure 2. Internal Circuit Architecture

MAXIMUM RATINGS

Rating

Continuous Power Supply or Drive Voltage Transient Power Supply Voltage

Duration < 10 ms, I

VCC

< 10 mA

Maximum Voltage on all other pins except Pin 8 (HV), Pin 6 (VCC) and

Pin 5 (Drv)

Maximum Current into all pins except VCC (6), HV (8) and Demag (1) when 10 V

ESD diodes are activated Maximum Current in Pin 1 Idem +3.0/−2.0 mA Thermal Resistance, Junction−to−Case R Thermal Resistance, Junction−to−Air, SOIC version R Maximum Junction Temperature TJ Temperature Shutdown − 155 °C Hysteresis in Shutdown − 30 °C Storage Temperature Range − −60 to +150 °C ESD Capability, HBM Model (All pins except VCC and HV) − 2.0 kV ESD Capability, Machine Model − 200 V Maximum Voltage on Pin 8 (HV), Pin 6 (VCC) decoupled to ground with 10 F Minimum Voltage on Pin 8 (HV), Pin 6 (VCC) decoupled to ground with 10 F

Symbol

VCC, Drv

Value

18 20

− −0.3 to 10 V

− 5.0 mA

57 °C/W 178 °C/W 150 °C

450 V

40 V

HVMAX

HVMIN

MAX

J−C J−A

Units

V V

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DAP006

ELECTRICAL CHARACTERISTICS (For typical values T

= 11 V unless otherwise noted)

= 25°C, for min/max values TJ = 0°C to +125°C, Max TJ = 150°C,

Rating Pin Symbol Min Typ Max Unit

DYNAMIC SELF−SUPPLY

Vcc Increasing Level at which the Current Source Turns−off 6 VCC Vcc Decreasing Level at which the Current Source Turns−on 6 VCC Vcc Decreasing Level at which the Latch−off Phase Ends 6 VCC Internal IC Consumption, No Output Load on Pin 5,

= 60 kHz, Duty Cycle = TBD

Internal IC Consumption, 1.0 nF Output Load on Pin 5,

= 60 kHz, Duty Cycle = TBD

6 ICC1 − 1.0 1.3

6 ICC2 − 1.6 2.0

OFF

latch

10.8 12 12.9 V

9.1 10 10.6 V

− 5.3 − V

(Note 1)

(Note 1

Internal IC Consumption in Latch−off Phase 6 ICC3 − 330 −

INTERNAL START−UP CURRENT SOURCE (TJ u 0°C)

High−voltage Current Source, VCC = 10 V 8 IC1 4.3 7.0 9.6 mA High−voltage Current Source, VCC = 0 8 IC2 − 8.0 − mA

DRIVE OUTPUT

Output Voltage Rise−time @ CL = 1.0 nF, 10−90% of Output

5 T

− 40 − ns

Signal

Output Voltage Fall−time @ CL = 1.0 nF, 10−90% of Output

5 T

− 20 − ns

Signal Source Resistance 5 R Sink Resistance 5 R

OH OL

12 20 36 Ω

5.0 10 19 Ω

CURRENT COMPARATOR (Pin 5 Unloaded)

Input Bias Current @ 1.0 V Input Level on Pin 3 3 I Maximum Internal Current Setpoint 3 I Propagation Delay from Current Detection to Gate OFF State 3 T Leading Edge Blanking Duration 3 T

Limit

DEL LEB

− 0.02 −

0.92 1.0 1.12 V

− 100 160 ns

− 380 − ns

Internal Current Offset Injected on the CS Pin during OFF Time 3 Iskip − 200 −

OVERVOLTAGE SECTION (VCC = 11 V)

Sampling Delay after ON Time 1 T OVP Internal Reference Level 1 V

sample

ref

− 4.5 −

6.4 7.2 8.0 V

FEEDBACK SECTION (VCC = 11 V, Pin 5 Loaded by 1.0 k)

Internal Pull−up Resistor 2 Rup − 20 − kΩ Pin 3 to Current Setpoint Division Ratio − Iratio − 3.3 − − Internal Soft−start − Tss − 5.0 − ms

DEMAGNETIZATION DETECTION BLOCK

Input Threshold Voltage (Vpin 1 Decreasing) 1 V Hysteresis (Vpin 1 Decreasing) 1 V

th H

35 50 90 mV

− 20 − mV

Input Clamp Voltage High State (Ipin 1 = 3.0 mA) Low State (Ipin 1 = −2.0 mA)

Demag Propagation Delay 1 T Internal Input Capacitance at Vpin 1 = 1.0 V 1 C Minimum T

(Internal Blanking Delay after TON) 1 T

OFF

Pin 1 Internal Resistance 1 R

1 1

dem

blank

par

H L

8.0

−0.9

−0.7

−0.5

− 210 − ns

− 10 − pF

− 5.0 −

int

− 28 − kΩ

1. Max value at TJ = 0°C.

A

s

V V

s

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DAP006

13.2

12.8

12.4

12.0

(V)

11.6

CC(off)

11.2

10.8

10.4

1.6

1.4

1.2

(mA)

1.0

CC1

0.8

TEMPERATURE (°C) TEMPERATURE (°C)

Figure 1. V

Threshold versus

CC(off)

Temperature

11.2

10.8

10.4

(V)

CC(on)

9.6

9.2

1251007550250−25

8.8

Figure 2. V

Threshold versus

CC(on)

1251007550250−25

Temperature

2.3

2.1

1.9

1.7

(mA)

CC2

1.5

0.6

0.4

8.0

(mA)

6.0

4.0

2.0

TEMPERATURE (°C) TEMPERATURE (°C)

Figure 3. Current Consumption (No Load)

versus Temperature

TEMPERATURE (°C) TEMPERATURE (°C)

Figure 5. HV Current Source at VCC = 10 V

versus Temperature

1.3

1251007550250−25

1.1 1251007550250−25

Figure 4. Current Consumption (Loaded by

1 nF) versus Temperature

1.20

1.15

1.10

(V)

1.05

limit

1.00

0.95

1251007550250−25

0.90 12550 10075250−25

Figure 6. Maximum Current Setpoint versus

Temperature

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