ON DAP006 Schematic [ru]

Customer Specific Device from ON Semiconductor
PWM Current−Mode
DAP006
Controller for Free Running Quasi−Resonant Operation
5.0 s timer prevents the free−run frequency to exceed the 150 kHz CISPR−22 EMI starting limit while the skip adjustment capability lets the user select the frequency at which the burst foldback takes place.
The Dynamic Self−Supply (DSS) drastically simplifies the transformer design in avoiding the use of an auxiliary winding. This feature is particularly useful in applications where the output voltage varies during operation (e.g. battery chargers). Due to its high−voltage technology, the IC is directly connected to the high−voltage DC rail. The DSS also offers a better overload trip point.
The transformer core reset detection is done through an auxiliary winding which, brought via a dedicated pin, also enables fast O v e r− Voltage Protection (OVP). Once an OVP has been detected, the IC permanently latches−off.
Finally, the continuous feedback signal monitoring implemented with an over−current fault protection circuitry (OCP) makes the final design rugged and reliable.
Features
Free−Running Borderline/Critical Mode
Quasi−Resonant Operation
Current−Mode with Adjustable Skip−Cycle Capability
No Auxiliary Winding V
Operation
CC
Auto−Recovery Over Current Protection
Latching Over Voltage Protection
External Latch Triggering, e.g. Via Over−Temperature
Signal
500 mA Peak Current Source/Sink Capability
Internal 4.0 ms Soft−Start
Internal 5.0 s Minimum T
OFF
Adjustable Skip Level
Internal Temperature Shutdown
Direct Optocoupler Connection
SPICE Models Available for TRANsient Analysis
Typical Applications
AC/DC Adapters for Notebooks, etc.
Offline Battery Chargers
Consumer Electronics (DVD Players, Set−Top Boxes,
TVs, etc.)
Auxiliary Power Supplies (USB, Appliances, TVs, etc.)
8
1
SO−8
D1, D2 SUFFIX
CASE 751
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 2
MARKING DIAGRAM
8
DAP6 ALYW
1
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 14 of this data sheet.
PIN CONNECTIONS
Dmg
18
FB
2
3
CS
Gnd
4
(Top View)
1 Publication Order Number:
HV NC
7
V
6
CC
5
Drv
DAP006/D
DAP006
OVP &
+
Demag
Universal Network
*Please refer to the application information section
*
Dmg FB
CS Gnd
V
HV
NC
CC
Drv
8 7 6 5
+
Y1 Type
1 2 3 4
12 V @ 1.0 A
+
Ground
Figure 1. Typical Application
PIN FUNCTION DESCRIPTION
Pin No.
1 Demag Core reset detection and OVP The auxiliary FLYBACK signal ensures discontinuous operation and
2 FB Sets the peak current setpoint By connecting an optocoupler to this pin, the peak current setpoint is
3 CS Current sense input and skip
4 Gnd The IC ground − 5 Drv Driving pulses The driver’s output to an external MOSFET. 6 V 7 NC This unconnected pin ensures adequate creepage distance. 8 HV High−voltage pin Connected to the high−voltage rail, this pin injects a constant current into
Pin Name
CC
Function
cycle level selection
Supplies the IC
Description
offers a fixed overvoltage detection level of 7.2 V.
adjusted accordingly to the output power demand. By bringing this pin below the internal skip level, device shuts off.
This pin senses the primary current and routes it to the internal comparator via an L.E.B. By inserting a resistor in series with the pin, you control the level at which the skip operation takes place.
This pin is connected to an external bulk capacitor of typically 10 F.
the VCC bulk capacitor.
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2
DAP006
4.5 s Delay
HV
V
CC
Ground
OVP
7.0
mA
PON
+
2.6 V
+
− +
12 V, 10 V,
5.3 V (fault)
To Internal
Supply
Fault
Mngt.
*S and R are level triggered whereas S is edge
triggered. R has priority over the other inputs.
/2.77
+
Demag
5.0 s
Blanking
S
S* R*
Overload?
5.0 s
Timeout
Q
Q
R
+
Timeout Reset
− +
+ 50 mV
V
CC
Soft−start = 5.0 ms
1.0 V
Demag
10 V
Driver: src = 20
sink = 10
/3
200 a
when Drv
is OFF
380 ns
L.E.B.
Demag
Drv
FB
CS
Figure 2. Internal Circuit Architecture
MAXIMUM RATINGS
Rating
Continuous Power Supply or Drive Voltage Transient Power Supply Voltage
Duration < 10 ms, I
VCC
< 10 mA
Maximum Voltage on all other pins except Pin 8 (HV), Pin 6 (VCC) and
Pin 5 (Drv)
Maximum Current into all pins except VCC (6), HV (8) and Demag (1) when 10 V
ESD diodes are activated Maximum Current in Pin 1 Idem +3.0/−2.0 mA Thermal Resistance, Junction−to−Case R Thermal Resistance, Junction−to−Air, SOIC version R Maximum Junction Temperature TJ Temperature Shutdown 155 °C Hysteresis in Shutdown 30 °C Storage Temperature Range −60 to +150 °C ESD Capability, HBM Model (All pins except VCC and HV) 2.0 kV ESD Capability, Machine Model 200 V Maximum Voltage on Pin 8 (HV), Pin 6 (VCC) decoupled to ground with 10 F Minimum Voltage on Pin 8 (HV), Pin 6 (VCC) decoupled to ground with 10 F
Symbol
VCC, Drv
V
CC
Value
18 20
−0.3 to 10 V
5.0 mA
57 °C/W 178 °C/W 150 °C
450 V
40 V
V
HVMAX
V
HVMIN
θ
θ
MAX
J−C J−A
Units
V V
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3
DAP006
ELECTRICAL CHARACTERISTICS (For typical values T
V
= 11 V unless otherwise noted)
CC
= 25°C, for min/max values TJ = 0°C to +125°C, Max TJ = 150°C,
J
Rating Pin Symbol Min Typ Max Unit
DYNAMIC SELF−SUPPLY
Vcc Increasing Level at which the Current Source Turns−off 6 VCC Vcc Decreasing Level at which the Current Source Turns−on 6 VCC Vcc Decreasing Level at which the Latch−off Phase Ends 6 VCC Internal IC Consumption, No Output Load on Pin 5,
F
= 60 kHz, Duty Cycle = TBD
SW
Internal IC Consumption, 1.0 nF Output Load on Pin 5,
F
= 60 kHz, Duty Cycle = TBD
SW
6 ICC1 1.0 1.3
6 ICC2 1.6 2.0
OFF
ON
latch
10.8 12 12.9 V
9.1 10 10.6 V
5.3 V
(Note 1)
(Note 1
Internal IC Consumption in Latch−off Phase 6 ICC3 330
INTERNAL START−UP CURRENT SOURCE (TJ u 0°C)
High−voltage Current Source, VCC = 10 V 8 IC1 4.3 7.0 9.6 mA High−voltage Current Source, VCC = 0 8 IC2 8.0 mA
DRIVE OUTPUT
Output Voltage Rise−time @ CL = 1.0 nF, 10−90% of Output
5 T
r
40 ns
Signal
Output Voltage Fall−time @ CL = 1.0 nF, 10−90% of Output
5 T
f
20 ns
Signal Source Resistance 5 R Sink Resistance 5 R
OH OL
12 20 36 Ω
5.0 10 19 Ω
CURRENT COMPARATOR (Pin 5 Unloaded)
Input Bias Current @ 1.0 V Input Level on Pin 3 3 I Maximum Internal Current Setpoint 3 I Propagation Delay from Current Detection to Gate OFF State 3 T Leading Edge Blanking Duration 3 T
IB
Limit
DEL LEB
0.02
0.92 1.0 1.12 V
100 160 ns
380 ns
Internal Current Offset Injected on the CS Pin during OFF Time 3 Iskip 200
OVERVOLTAGE SECTION (VCC = 11 V)
Sampling Delay after ON Time 1 T OVP Internal Reference Level 1 V
sample
ref
4.5
6.4 7.2 8.0 V
FEEDBACK SECTION (VCC = 11 V, Pin 5 Loaded by 1.0 k)
Internal Pull−up Resistor 2 Rup 20 kΩ Pin 3 to Current Setpoint Division Ratio Iratio 3.3 − Internal Soft−start Tss 5.0 ms
DEMAGNETIZATION DETECTION BLOCK
Input Threshold Voltage (Vpin 1 Decreasing) 1 V Hysteresis (Vpin 1 Decreasing) 1 V
th H
35 50 90 mV
20 mV
Input Clamp Voltage High State (Ipin 1 = 3.0 mA) Low State (Ipin 1 = −2.0 mA)
Demag Propagation Delay 1 T Internal Input Capacitance at Vpin 1 = 1.0 V 1 C Minimum T
(Internal Blanking Delay after TON) 1 T
OFF
Pin 1 Internal Resistance 1 R
1 1
VC
VC
dem
blank
par
H L
8.0
−0.9
10
−0.7
12
−0.5
210 ns
10 pF
5.0
int
28 kΩ
1. Max value at TJ = 0°C.
mA
mA
A
A
A
s
V V
s
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4
DAP006
13.2
12.8
12.4
12.0
(V)
11.6
CC(off)
V
11.2
10.8
10.4
1.6
1.4
1.2
(mA)
1.0
CC1
I
0.8
TEMPERATURE (°C) TEMPERATURE (°C)
Figure 1. V
Threshold versus
CC(off)
Temperature
11.2
10.8
10.4
(V)
10
CC(on)
V
9.6
9.2
1251007550250−25
8.8
Figure 2. V
Threshold versus
CC(on)
1251007550250−25
Temperature
2.3
2.1
1.9
1.7
(mA)
CC2
I
1.5
0.6
0.4
12
10
8.0
(mA)
C1
I
6.0
4.0
2.0
TEMPERATURE (°C) TEMPERATURE (°C)
Figure 3. Current Consumption (No Load)
versus Temperature
TEMPERATURE (°C) TEMPERATURE (°C)
Figure 5. HV Current Source at VCC = 10 V
versus Temperature
1.3
1251007550250−25
1.1 1251007550250−25
Figure 4. Current Consumption (Loaded by
1 nF) versus Temperature
1.20
1.15
1.10
(V)
1.05
limit
I
1.00
0.95
1251007550250−25
0.90 12550 10075250−25
Figure 6. Maximum Current Setpoint versus
Temperature
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5
DAP006
()
OH
R
120
100
(mV)
(th)
V
40 35 30 25 20
15 10
5 0
TEMPERATURE (°C) TEMPERATURE (°C)
Figure 7. Drive Source Resistance versus
Temperature
80
60
40
20
20 18
16 14 12
()
10
OL
R
8.0
6.0
4.0
2.0
1251007550250−25
0
1251007550250−25
Figure 8. Drive Sink Resistance versus
Temperature
8.0
7.5
(V)
7.0
ref
V
6.5
0
1251007550250−25
TEMPERATURE (°C) TEMPERATURE (°C)
Figure 9. Demagnetization Detection
6.0 1251007550250−25
Figure 10. OVP Threshold versus Temperature
Threshold versus Temperature
7.0
6.5
6.0
5.5
(S)
off
5.0
T
4.5
4.0
3.5
Figure 11. Minimum T
TEMPERATURE (°C) TEMPERATURE (°C)
versus Temperature Figure 12. Demagnetization Detection Timeout
off
1251007550250−25
7.0
6.6
6.2
5.8
(S)
5.4
out
T
5.0
4.6
4.2
3.8 12550 10075250−25
versus Temperature
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6
DAP006
8.5
7.5
6.5
5.5
(S)
ss
T
4.5
3.5
2.5
TEMPERATURE (°C)
1251007550250−25
Figure 13. Internal Soft−start versus
Temperature
60
50
40
30
(k)
int
R
20
10
0
TEMPERATURE (°C)
Figure 14. DMG Pin Internal Resistance versus
Temperature
1251007550250−25
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7
DAP006
Application Information
Introduction
The DAP006 implements a standard current mode architecture where the switch−off time is dictated by the peak current setpoint whereas the core reset detection triggers the turn−on event. This component represents the ideal candidate where low part−count is the key parameter, particularly in low−cost AC/DC adapters, consumer electronics, auxiliary supplies, etc. Thanks to its high−performance High−Voltage technology, the DAP006 incorporates all th e necessary components / features needed to build a rugged and reliable Switch−Mode Power Supply (SMPS):
Transformer core reset detection: borderline / critical
operation is ensured whatever the operating conditions are. As a result, there are virtually no primary switch turn−on losses and no secondary diode recovery losses. The converter also stays a first−order system and accordingly eases the feedback loop design.
Quasi−resonant operation: by delaying the turn−on
event, it is possible to re−start the MOSFET in the minimum of the drain−source wave, ensuring reduced EMI / video noise perturbations. In nominal power conditions, the DAP006 operates in Borderline Conduction Mode (BCM) also called Critical Conduction Mode.
Dynamic Self−Supply (DSS): due to its Very High
Voltage Integrated Circuit (VHVIC) technology, ON Semiconductor’s DAP006 allows for a direct pin connection to the high−voltage DC rail. A dynamic current source charges up a capacitor and thus provides a fully independent VCC level to the DAP006. As a result, there is no need for an auxiliary winding whose management is always a problem in variable output voltage designs (e.g. battery chargers).
Overvoltage Protection (OVP): by sampling the plateau
voltage on the demagnetization winding, the DAP006 goes into latched fault condition whenever an over−voltage condition is detected. The controller stays fully latched in this position until the VCC is cycled down 4.0 V, e.g. when the user un−plugs the power supply from the mains outlet and re−plugs it.
External latch trip point: by externally forcing a level
on the OVP greater than the internal setpoint, it is possible to latch−off the IC, e.g. with a signal coming from a temperature sensor.
Adjustable skip cycle level: by offering the ability to
tailor the level at which the skip cycle takes place, the designer can make sure that the skip operation only occurs at low peak current. This point guarantees a
noise−free operation with cheap transformer. This option also offers the ability to fix the maximum switching frequency when entering light load conditions.
Over Current Protection (OCP): by continuously
monitoring the FB line activity, DAP006 enters burst mode as soon as the power supply undergoes an overload. The device enters a safe low power operation which prevents from any lethal thermal runaway. As soon as the default disappears, the power supply resumes operation. Unlike other controllers, overload detection is performed independently of any auxiliary winding level. In presence of a bad coupling between both power and auxiliary windings, the short circuit detection can be severely affected. The DSS naturally shields you against these troubles.
Dynamic Self−Supply
The DSS principle is based on the charge/discharge of t h e VCC bulk capacitor from a low level up to a higher level. We can easily describe the current source operation with some simple logical equations:
POWER−ON: IF VCC < V ON, no output pulses
IF VCC decreasing > V
CCL
output is pulsing IF VCC increasing < V
CCH
output is pulsing Typical values are: V
CCH
To better understand the operational principle, Figure 15’s sketch offers the necessary light.
V
= 2 V
RIPPLE
CC
V
CURRENT SOURCE
10.0 M 30.0 M 50.0 M 70.0 M 90.0 M
Figure 15. The Charge/Discharge Cycle Over a 10 mF
U
ON
V
Capacitor
CC
THEN Current Source is
CCH
THEN Current Source is OFF ,
THEN Current Source is ON,
= 12 V, V
= 12 V
VLOH
Output Pulses
U
VLOL
CCL
= 10 V
= 10 V
OFF
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8
DAP006
k
The DSS behavior actually depends on the internal IC consumption and the MOSFET’s gate charge Qg. If we select a MOSFET like the MTP2N60E, Qg equals 22 nC (max). With a maximum switching frequency selected at 75 kHz, the average power necessary to drive the MOSFET (excluding the driver efficiency and neglecting various voltage drops) is:
Fsw Qg ⋅ VCC with:
Fsw = maximum switching frequency Qg = MOSFET’s gate charge VCC = VGS level applied to the gate
To obtain the output current, simply divide this result by VCC: I
= FSW Qg = 1.6 mA. The total standby power
driver
consumption at no−load will therefore heavily rely on the internal IC consumption plus the above driving current (altered by the driver’s efficiency). Suppose that the IC is supplied from a 350 VDC line. The current flowing through pin 8 is a direct image of the DAP006 consumption (neglecting the switching losses of the HV current source). If I
equals 2.3 mA @ TJ = 60°C, then the power
CC2
dissipated (lost) by the IC is simply: 350 x 2.3 m = 805 mW . For design and reliability reasons, it would be interested to reduce this source of wasted power which increase the die temperature. This can be achieved by using different methods:
1. Use a MOSFET with lower gate charge Qg.
2. Connect pin through a diode (1N4007 typically) to one of the mains input. The average value on pin 8
V
becomes
mainsPEAK @ 2
. Our power contribution example drops to: 223 x 1.8 m = 512 mW. If a resistor is installed between the
mains and the diode, you further force the dissipation to migrate from the package to the resistor. The resistor value should account for low−line startups.
MAINS
12
HV
C
bulk
1 2 3 4
1N4007
5
8
6
7 6 5
When using Figure 16 option, it is important to check the absence of any negative ringing that could occur on pin 8. The resistor in series should help to damp any parasitic LC network that would ring when suddenly applying the power to the IC. Also, since the power disappears during 20 ms (half−wave rectification), CVCC should be calculated to supply the IC during these holes in the supply
3. Permanently force the VCC level above V
CCH
with an auxiliary winding. It will automatically disconnect the internal start−up source and the IC will be fully self−supplied from this winding. Again, the total power drawn from the mains will significantly decrease. Make sure the auxiliary voltage never exceeds the 16 V limit.
Skipping Cycle Mode
The DAP006 automatically skips switching cycles when the output power demand drops below a given level. This is accomplished by monitoring the FB pin. In normal operation, pin 2 imposes a peak current accordingly to the load value. If the load demand decreases, the internal loop asks for less peak current. When this setpoint reaches a determined level, the IC prevents the current from decreasing further down and starts to blank the output pulses: the IC enters the so−called skip cycle mode, also named controlled burst operation. The power transfer now depends upon the width of the pulse bunches (Figure 17) and follows the following formula:
1
@ Lp@ Ip2@ Fsw @ D
2
burst
with:
Lp = primary inductance Fsw = switching frequency within the burst Ip = peak current at which skip cycle occurs D
= burst width / burst recurrence
burst
300 M
200 M
100 M
MAX PEAK CURRENT
0
WIDTH
NORMAL CURRENT
MODE OPERATION
SKIP CYCLE
CURRENT LIMIT
Figure 16. A simple diode naturally reduces the
average voltage on pin 8
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RECURRENCE
315.4 U 882.7 U 1.450 M 2.017 M 2.585 M
Figure 17. The skip cycle takes place at low pea
currents which guaranties noise free operation
9
DAP006
DRIVER
DRIVER = HIGH ? I = 0 DRIVER = LOW ? I = 200 A
R
3
RESET
Figure 18. A patented method allows for skip level
selection via a series resistor inserted in series
+
2
+
with the current
skip
R
sense
The skip level selection is done through a simple resistor inserted between the current sense input and the sense element. Every time the DAP006 output driver goes low, a
200 A source forces a current to flow through the sense pin (Figure 18): when the driver is high, the current source if off and the current sense information is normally processed. As soon as the driver goes low, the current source delivers 200 μA and develops a ground referenced voltage across R
. If this voltage is below the feedback voltage, the
skip
current sense comparator stays in the low state and the internal latch can be triggered by the next clock cycle. Now , if because of a low load mode the feedback voltage is below R
level, then the current sense comparator permanently
skip
resets the latch and the next clock cycle (given by the demagnetization detection) is ignored: we are skipping cycles as shown by Figure 17. As soon as the feedback voltage goes up again, there can be two situations: the recurrent period is small and a new demagnetization detection (next wave) signal triggers the DAP006. To the opposite, in low output power conditions, no more ringing waves are present on the drain and the toggling of the current sense comparator alone initiates a new cycle start. Figure 19 depicts these two different situations.
DEMAG RE−START CURRENT SENSE RE−START
Figure 19. When the primary natural ringing becomes too low, the current sense
initiates a new cycle when FB passes the skip level
Demagnetization Detection
The core reset detection is done by monitoring the voltage activity on the auxiliary winding. This voltage features a FLYBACK polarity. The typical detection level is fixed at 50 mV as exemplified by Figure 20.
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7.0
5.0
3.0
1.0
−1.0
10
POSSIBLE
RE−STARTS
0 V
Figure 20. Core reset detection is done through a
dedicated auxiliary winding monitoring
50 mV
DAP006
TO INTERNAL
x
OMPARATOR
R
int
R
+ R
esd
= 28 k
int
Figure 21. Internal Pad Implementation
R
esd
1
ESD2 ESD1
R
1
4
dem
52
4
Au
3
An internal timer prevents any re−start within 5.0 s further to the driver going−low transition. This prevents the switching frequency to exceed (1 / TON + 5.0 s) but also avoid false leakage inductance tripping at turn−off. In some cases, the leakage inductance kick is so energetic, that a slight filtering is necessary.
The DAP006 demagnetization detection pad features a specific component arrangement as detai l e d by F i gure 21. In this picture, the zener diodes network protect the IC against any potential ESD discharge that could appear on the pins. The first ESD diode connected to the pad, exhibits a parasitic capacitance. When this parasitic capacitance (10 pF typically) is combined with R
, a re−start delay is created
dem
and the possibility to switch right in the drain−source wave exists. This guarantees QR operation with all the associated benefits (low EMI, no turn−on losses etc.). R
should be
dem
calculated to limit the maximum current flowing through pin 1 to less than +3/−2 mA: If during turn−on, the auxiliary winding delivers 30 V (at the highest line level), then the minimum R
value is defined by: (30 + 0.7)/3 mA =
dem
10.2 kΩ. This value will be further increased to introduce a re−start delay and also a slight filtering in case of high leakage energy.
Figure 22 portrays a typical VDS shot at nominal output power.
400
300
Overvoltage Protection
The overvoltage protection works by sampling the plateau voltage 4.5 s after the turn−off sequence. This delay guarantees a clean plateau, providing that the leakage inductance ringing has been fully damped. If this would not be the case, the designer should install a small RC damper across the transformer primary inductance connections. Figure 23 shows where the sampling occurs on the auxiliary winding.
7.0
5.0
3.0
1.0
0 V
−1.0
Figure 23. A voltage sample is taken 4.5 ms after
the turn−off sequence
SAMPLING HERE
When an OVP condition has been detected, the DAP006 enters a latch−off phase and stops all switching operations. The controller stays fully latched in this position and the DSS is still active, keeping the VCC between 10/12 V as in normal operations. This state lasts until the VCC is cycled down 4.0 V, e.g. when the user un−plugs the power supply from the mains outlet.
By default, the OVP comparator is biased to a 2.6 V reference level and pin1 is routed via a divide by 2.77 network. As a result, when V
reaches 7.2 V, the OVP
pin1
comparator is triggered. The threshold can thus be adjusted by either modifying the power winding to auxiliary winding turn ratios to match this 7.2 V level or insert a resistor from pin1 to ground to cope with your design requirement.
200
100
0
42.0 U 56.0 U 70.0 U 84.0 U 98.0 U
Figure 22. The DAP006 Operates in
Borderline / Critical Operation
Latching Off the DAP006
In certain cases, it can be very convenient to externally shut down permanently the DAP006 via a dedicated signal, e.g. coming from a temperature sensor. The reset occurs when the user un−plugs the power supply from the mains outlet. T o trigger the latch−off, a simple PNP transistor c a n do the work, as Figure 24 shows.
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11
R
dem
1
Thermistor
Figure 24. A simple transistor arrangement
triggers the latch−off as soon as the temperature
2 3 4
exceeds a given setpoint
8 7 6 5
C
VCC
Aux. Winding
Shutting Off the DAP006
Shutdown can easily be implemented through a simple NPN bipolar transistor as depicted by Figure 25. When OFF, Q1 is transparent to the operation. When forward biased, the transistor pulls the FB pin to ground (V
≈ 200 mV) and
CE(sat)
permanently disables the IC. A small time constant on the transistor base will avoid false triggering (Figure 25).
DAP006
1
ON/OFF
10 k
Figure 25. A simple bipolar transistor totally
disables the IC
23
10 nF
Q1
2
1
3 4
8 7 6 5
Power Dissipation
The SOIC package offers a R
of 178°C/W when
J−A
wired on a min pad area. Adding some copper surface around the PCB footprint will help decrease this number: 12 mm x 12 mm to drop R
down to 100°C/W with 35
J−A
copper thickness (1 oz.) or 6.5 mm x 6.5 mm with 70 copper thickness (2 oz.). Care must be taken to not exceed the maximum dissipated power that can be computed using:
T
* T
+
Jmax
P
max
125°C, TA = 70°C and the min R
R
J * A
Amax
which is 310 mW for T
J−A
=
Jmax
. The main power
DAP006
dissipation (excluding the ohmic discharge losses in the driver stage) is given by P = ICC x VCC. ICC corresponds to the internal IC consumption at a given switching frequency F
sw−max
driving current. If we assume that our system operates at 90 kHz from a 13 V VCC level and considering an internal consumption of 1.0 mA, then the maximum gate charge Q
shall be less than: 250 nC. If larger MOSFETs are required, or if one wants to
lower TJ, please refer to AND8069 available to download from www.onsemi.com/pub/ncp1200.
Overload Operation
controlled (e.g. wall adapters delivering raw DC level), it is interesting to implement a true short−circuit protection. A short−circuit actually forces the output voltage to be at a low level, preventing a bias current to circulate in the optocoupler LED. As a result, the FB pin level is pulled up to 4.2 V, as internally imposed by the IC. The peak current setpoint goes to the maximum and the supply delivers a rather high power with all the associated effects. Please note that this can also happen in case of feedback loss, e.g. a broken optocoupler. To account for this situation, DAP006 hosts a dedicated overload detection circuitry. Once activated, this circuitry imposes to deliver pulses in a burst manner with a low duty−cycle. The system recovers when the fault condition disappears.
the maximum until the output voltage reaches its target and the feedback loop takes over. This period of time depends on normal output load conditions and the maximum peak current allowed by the system. The time−out used by this IC works with the VCC decoupling capacitor: as soon as the VCC decreases from the U device internally watches for an overload current situation. If this condition is still present when the U reached, the controller stops the driving pulses, prevents the self−supply current source to restart and puts all the circuitry in standby, consuming as little as 330 A typical (ICC3 parameter). As a result, the VCC level slowly discharges toward 0. When this level crosses 5.3 V typical, the controller enters a new startup phase by turning the current source on: VCC rises toward 12 V and again delivers output pulses at the U been removed before U continues its normal operation. Otherwise, a new fault cycle takes place. Figure 26 shows the evolution of the signals in presence of a fault.
(the maximum is the worst case) plus the MOSFET
P
max
* I
V
Q
CCmax
v
g
F
CC1
sw * max
or a Q
gmax
less than
In applications where the output current is purposely not
During the start−up phase, the peak current is pushed to
level (typically 12 V) the
VLOH
level is
VLOL
crossing point. If the fault condition has
VLOH
approaches, then the IC
VLOL
g
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12
12 V
10 V
5.3 V
DAP006
V
CC
REGULATION
OCCURS HERE
LATCH−OFF
PHASE
DRV
DRIVER
PULSES
INTERNAL
FAULT FLAG
FAULT IS RELAXED
FAULT OCCURS HERESTARTUP PHASE
Figure 26.
Soft−Start
The DAP006 features an internal 4 ms soft−start to soften the constraints occurring in the power supply during start−up. It is activated during the power on sequence. As soon as VCC reaches V
, the peak current is gradually
CC(off)
increased from nearly zero up to the maximum clamping level (e.g. 1.0 V). The soft−start is also activated during the over current burst (OCP) sequence. Every restart attempt is followed by a soft−start activation. Generally speaking, the soft−start will be activated when VCC ramps up either from zero (fresh power—on sequence) or 5.3 V, the latch—off voltage occurring during OCP.
Calculating the Vcc Capacitor
As the above section describes, the fall down sequence depends upon the VCC level: how long does it take for the VCC line to go from 12 V to 10 V? The required time depends on the start−up sequence of your system, i.e. when you first apply the power to the IC. The corresponding transient fault duration due to the output capacitor charging must be less than the time needed to discharge from 12 V to 10 V, otherwise the supply will not properly start. The test consists in either simulating or measuring in the lab how much time the system takes to reach the regulation at full load. Let’s suppose that this time corresponds to 6.0 ms. Therefore a VCC fall time of 10 ms could be well appropriated in order to not trigger the overload detection circuitry. If the corresponding IC consumption, including the MOSFET
TIME
TIME
TIME
If the fault is relaxed during the Vcc natural fall down sequence, the IC automatically resumes. If the fault still persists when Vcc reached U cuts everything off until recovery.
, then the controller
VLOL
drive, establishes at 1.6 mA (e.g. with a 10 nC Qg), we can calculate the required capacitor using the following
formula: t +
V @ C
, with ΔV = 2.0 V. Then for a wanted
i
Δt of 10 ms, C equals 9.0F or 22F for a standard value. When an overload condition occurs, the IC blocks its internal circuitry and its consumption drops to 330 A typical. This happens at VCC = 10 V and it remains stuck until VCC reaches 5.3 V: we are in latch−off phase. Again, using the calculated 22 F and 600 A current consumption, this latch−off phase lasts: (10 − 5.3) x 22   313 ms.
Protecting Pin 8 Against Negative Spikes
As any CMOS controller, DAP006 is sensitive to negative voltages that could appear on its pins. T o avoid any adverse latch−up of the IC, we strongly recommend to insert a resistor in series with pin 8 or apply Figure 2 trick. This resistor (or this diode in case of Figure 2) prevents from adversely latching the controller in case of negative spikes appearing on the bulk capacitor during the power−off sequence. A typical value of 6.8 k/0.5 W is suitable. When using an auxiliary winding, this resistor does not dissipate any power since it only sees current during the startup sequence and during overload.
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13
DAP006
Operation Shots
Below are some oscilloscope shots captured at Vin = 120 VDC with a transformer featuring an 800 H primary inductance.
Figure 27.
This plot gathers waveforms captured at three different operating points:
1st upper plot: free run, valley switching operation, P
= 26 W
out
2nd middle plot: min T
clamps the switching frequency
off
and selects the second valley 3rd lowest plot: the skip slices the second valley pattern
and will further expand the burst as P
goes low
out
This picture explains how the 200 A internal offset
current creates the skip cycle level.
VCC (5 V/div)
V
(5 V/div)
GATE
Figure 29.
presence of a secondary overload.
V
(5 V/div)
GATE
200 A X R
Current Sense Pin (200 mV/div)
SKIP
V
Rsense
(200 mV/div)
Figure 28.
ORDERING INFORMATION
Device Type Marking Package Shipping
SCY99006R2 DAP006 DAP6 SOIC−8 2500/Tape & Reel
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14
(SO−8)
−Y−
−Z−
DAP006
PACKAGE DIMENSIONS
D1, D2 SUFFIX
CASE 751−07
M
Y
N
ISSUE AG
X 45
_
M
K
J
−X− A
58
B
1
S
0.25 (0.010)
4
M
G
C
SEATING PLANE
0.10 (0.004)
H
D
0.25 (0.010) Z
M
Y
SXS
SOLDERING FOOTPRINT*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07.
MILLIMETERS
DIMAMIN MAX MIN MAX
4.80 5.00 0.189 0.197
B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.053 0.069 D 0.33 0.51 0.013 0.020 G 1.27 BSC 0.050 BSC H 0.10 0.25 0.004 0.010 J 0.19 0.25 0.007 0.010 K 0.40 1.27 0.016 0.050 M 0 8 0 8
____
N 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244
INCHES
1.52
0.060
7.0
0.275
0.6
0.024
4.0
0.155
1.270
0.050
SCALE 6:1
ǒ
inches
mm
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
The product described herein (DAP006), may be covered by one or more of the following U.S. patents: 6,385,060; 6,385,061. There may be other patents pending.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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DAP006/D
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