ON DAN222 Schematic [ru]

DAN222

Common Cathode Silicon
Dual Switching Diode

This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SOT-416/SC-75 package which is designed
for low power surface mount applications, where board space is at a
premium.

Features

•Fast t

•Low C

•Pb-Free Packages are Available

MAXIMUM RATINGS (TA = 25°C)

THERMAL CHARACTERISTICS

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. t = 1 mS

rr

D

Rating Symbol Value Unit

Reverse Voltage V

Peak Reverse Voltage V

Forward Current I

Peak Forward Current I

Peak Forward Surge Current (Note 1) I

Characteristic Symbol Max Unit

Power Dissipation P

Junction Temperature T

Storage Temperature Range T

RM

F

FM

FSM

stg

R

D

J

-55 to +150 °C

80 Vdc

80 Vdc

100 mAdc

300 mAdc

2.0 Adc

150 mW

150 °C/W

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CATHODE

3

12

ANODE

1

SC-75/SOT-416

CASE 463

STYLE 3

MARKING DIAGRAM

N9 MG

G

1

N9 = Specific Device Code
M = Date Code*
G = Pb-Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

© Semiconductor Components Industries, LLC, 2008

January, 2008 - Rev. 5

ORDERING INFORMATION

Device Package Shipping

DAN222 SC-75/SOT-416 3000/Tape & Reel

DAN222G SC-75/SOT-416

DAN222T1 3000/Tape & Reel

DAN222T1G 3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

1 Publication Order Number:

(Pb-Free)

SC-75/SOT-416

SC-75/SOT-416

(Pb-Free)

3000/Tape & Reel

†

DAN222/D

DAN222

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C)

A

Symbol Condition Min Max Unit

Reverse Voltage Leakage Current I

Forward Voltage V

Reverse Breakdown Voltage V

Diode Capacitance C

Reverse Recovery Time trr(2)

2.trr Test Circuit on following page.

TYPICAL ELECTRICAL CHARACTERISTICS

100

TA = 85°C

10

, FORWARD CURRENT (mA)

F

I

1.0

TA = 25°C

R

F

R

D

TA = -40°C

VR = 70 V - 0.1

IF = 100 mA - 1.2 Vdc

IR = 100 mA

VR = 6.0 V, f = 1.0 MHz - 3.5 pF

IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 I

10

TA = 150°C

1.0

TA = 125°C

TA = 85°C

0.1

, REVERSE CURRENT (μA)

R

0.01

I

TA = 55°C

80 - Vdc

- 4.0 ns

R

mAdc

0.1

0.2 0.4

TA = 25°C

0.001

0.6 0.8 1.0

, FORWARD VOLTAGE (VOLTS)

V

F

1.2

0

10 20 30 40

, REVERSE VOLTAGE (VOLTS)

V

R

Figure 1. Forward Voltage Figure 2. Reverse Current

1.0

0.9

0.8

, DIODE CAPACITANCE (pF)

0.7

D

C

0.6
0

2468

V

, REVERSE VOLTAGE (VOLTS)

R

Figure 3. Diode Capacitance

50

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2