ON DAN222 Schematic [ru]

DAN222
Common Cathode Silicon Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT-416/SC-75 package which is designed for low power surface mount applications, where board space is at a premium.
Features
Fast t
Low C
Pb-Free Packages are Available
MAXIMUM RATINGS (TA = 25°C)
THERMAL CHARACTERISTICS
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. t = 1 mS
rr
D
Rating Symbol Value Unit
Reverse Voltage V
Peak Reverse Voltage V
Forward Current I
Peak Forward Current I
Peak Forward Surge Current (Note 1) I
Characteristic Symbol Max Unit
Power Dissipation P
Junction Temperature T
Storage Temperature Range T
RM
F
FM
FSM
stg
R
D
J
-55 to +150 °C
80 Vdc
80 Vdc
100 mAdc
300 mAdc
2.0 Adc
150 mW
150 °C/W
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CATHODE
3
12
ANODE
1
SC-75/SOT-416
CASE 463
STYLE 3
MARKING DIAGRAM
N9 MG
G
1
N9 = Specific Device Code M = Date Code* G = Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
© Semiconductor Components Industries, LLC, 2008
January, 2008 - Rev. 5
ORDERING INFORMATION
Device Package Shipping
DAN222 SC-75/SOT-416 3000/Tape & Reel
DAN222G SC-75/SOT-416
DAN222T1 3000/Tape & Reel
DAN222T1G 3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
1 Publication Order Number:
(Pb-Free)
SC-75/SOT-416
SC-75/SOT-416
(Pb-Free)
3000/Tape & Reel
DAN222/D
DAN222
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C)
A
Symbol Condition Min Max Unit
Reverse Voltage Leakage Current I
Forward Voltage V
Reverse Breakdown Voltage V
Diode Capacitance C
Reverse Recovery Time trr(2)
2.trr Test Circuit on following page.
TYPICAL ELECTRICAL CHARACTERISTICS
100
TA = 85°C
10
, FORWARD CURRENT (mA)
F
I
1.0
TA = 25°C
R
F
R
D
TA = -40°C
VR = 70 V - 0.1
IF = 100 mA - 1.2 Vdc
IR = 100 mA
VR = 6.0 V, f = 1.0 MHz - 3.5 pF
IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 I
10
TA = 150°C
1.0
TA = 125°C
TA = 85°C
0.1
, REVERSE CURRENT (μA)
R
0.01
I
TA = 55°C
80 - Vdc
- 4.0 ns
R
mAdc
0.1
0.2 0.4
TA = 25°C
0.001
0.6 0.8 1.0
, FORWARD VOLTAGE (VOLTS)
V
F
1.2
0
10 20 30 40
, REVERSE VOLTAGE (VOLTS)
V
R
Figure 1. Forward Voltage Figure 2. Reverse Current
1.0
0.9
0.8
, DIODE CAPACITANCE (pF)
0.7
D
C
0.6 0
2468
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 3. Diode Capacitance
50
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2
R
A
L
RECOVERY TIME EQUIVALENT TEST CIRCUIT
Figure 4. Reverse Recovery Time Test Circuit for the DAN222
DAN222
V
R
t
r
t
p
I
t
F
t
rr
10%
I
= 0.1 I
rr
90%
tp = 2 ms t
= 0.35 ns
r
IF = 5.0 mA V
= 6 V
R
R
= 100 W
L
INPUT PULSE OUTPUT PULSE
t
R
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3
DAN222
PACKAGE DIMENSIONS
SC-75/SOT-416
CASE 463-01
ISSUE F
3 PL
b
0.20 (0.008) D
M
C
-E-
3
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2
e
-D-
1
0.20 (0.008) E
H
E
A
A1
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
DIM MIN NOM MAX
A 0.70 0.80 0.90
A1 0.00 0.05 0.10
b
0.15 0.20 0.30 0.006 0.008 0.012
C 0.10 0.15 0.25 D 1.55 1.60 1.65 E
0.70 0.80 0.90 0.027 0.031 0.035
e 1.00 BSC L 0.10 0.15 0.20
H
1.50 1.60 1.70
E
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
INCHES
MIN NOM MAX
0.027 0.031 0.035
0.000 0.002 0.004
0.004 0.006 0.010
0.059 0.063 0.067
0.04 BSC
0.004 0.006 0.008
0.061 0.063 0.065
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
ǒ
inches
mm
Ǔ
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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For additional information, please contact your local Sales Representative
DAN222/D
4
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