CM1293
8-Channel Low
Capacitance ESD
Protection Arrays
Product Description
The CM1293 family of diode arrays has been designed to provide
ESD protection for electronic components or sub−systems requiring
minimal capacitive loading. These devices are ideal for protecting
systems with high data and clock rates or for circuits requiring low
capacitive loading. Each ESD channel consists of a pair of diodes in
series which steer the positive or negative ESD current pulse to either
the positive (V
embedded between V
protects the V
need for a bypass capacitor that would otherwise be needed for
absorbing positive ESD strikes to ground. The CM1293 will protect
against ESD pulses up to (8 kV contact discharge) per the
IEC 61000−4−2 Level 4 standard.
This device is particularly well−suited for protecting systems using
high−speed ports such as USB2.0, IEEE1394 (FireWire
Serial ATA, DVI, HDMI and corresponding ports in removable
storage, digital camcorders, DVD−RW drives and other applications
where extremely low loading capacitance with ESD protection are
required in a small package footprint.
Features
• Eight Channels of ESD Protection
Note: For 2 and 4 Channel Devices, See the CM1293A Datasheet
• Provides ESD Protection to IEC61000−4−2
• ±8 kV Contact Discharge
• Low Loading Capacitance of 2.0 pF Max
• Low Clamping Voltage
• Channel I/O to I/O Capacitance 1.5 pF Typical
• Zener Diode Protects Supply Rail and Eliminates the Need for
External By−Pass Capacitors
• Each I/O Pin Can Withstand over 1000 ESD Strikes*
• These Devices are Pb−Free and are RoHS Compliant
Applications
• DVI Ports, HDMI Ports in Notebooks, Set Top Boxes, Digital TVs,
LCD Displays
• Serial ATA Ports in Desktop PCs and Hard Disk Drives
• PCI Express Ports
• General Purpose High−Speed Data Line ESD Protection
) or negative (VN) supply rail. A Zener diode is
P
and VN, offering two advantages. First, it
P
rail against ESD strikes, and second, it eliminates the
CC
®
, i.LINKt),
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MSOP−10
MR SUFFIX
CASE 846AE
BLOCK DIAGRAM
CH8 V
Device Package Shipping
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
CH7 CH6 CH5
CH2CH1 CH4CH3
MARKING DIAGRAM
D039 = CM1293−08MR
ORDERING INFORMATION
P
V
N
CM1293−08MR
D039
MSOP−10
(Pb−Free)
4000/Tape & ReelCM1293−08MR
†
*Standard test condition is IEC61000−4−2 level 4 test circuit with each pin subjected to ±8 kV contact discharge for 1000 pulses. Discharges
are timed at 1 second intervals and all 1000 strikes are completed in one continuous test run. The part is then subjected to standard production
test to verify that all of the tested parameters are within spec after the 1000 strikes.
© Semiconductor Components Industries, LLC, 2011
March, 2011 − Rev. 4
1 Publication Order Number:
CM1293/D
CM1293
Table 1. PIN DESCRIPTIONS
8−Channel, 10−Lead MSOP−10 Package
Pin Name Type Description
1 CH1 I/O ESD Channel
2 CH2 I/O ESD Channel
3 CH3 I/O ESD Channel
4 CH4 I/O ESD Channel
5 V
6 CH5 I/O ESD Channel
7 CH6 I/O ESD Channel
8 V
9 CH7 I/O ESD Channel
10 CH8 I/O ESD Channel
N
P
GND Negative Voltage Supply Rail
PWR Positive Voltage Supply Rail
PACKAGE / PINOUT DIAGRAM
Top View
CH1
CH2
CH3
CH4
V
1
2
3
4
56
N
10−Lead MSOP−10
10
D039
CH8
9
CH7
V
8
7
P
CH6
CH5
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter Rating Units
Operating Supply Voltage (VP − VN) 6.0 V
Operating Temperature Range −40 to +85 °C
Storage Temperature Range −65 to +150 °C
DC Voltage at any Channel Input (VN − 0.5) to (VP + 0.5) V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter Rating Units
Operating Temperature Range −40 to +85 °C
Package Power Rating
MSOP−10 Package (CM1293−08MR)
400
mW
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CM1293
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
V
V
Operating Supply Voltage (VP−VN) 3.3 5.5 V
P
I
Operating Supply Current (VP−VN) = 3.3 V 8.0
P
Diode Forward Voltage
F
Top Diode
Bottom Diode
I
LEAK
C
DC
C
MUTUAL
V
ESD
Channel Leakage Current T
Channel Input Capacitance At 1 MHz, V
IN
Channel Input Capacitance Matching At 1 MHz, V
IN
Mutual Capacitance between Signal
Pin and Adjacent Signal Pin
ESD Protection
Peak Discharge Voltage at any
Channel Input, in System
Contact Discharge per
IEC 61000−4−2 Standard
V
Channel Clamp Voltage
CL
Positive Transients
Negative Transients
R
DYN
Dynamic Resistance
Positive Transients
Negative Transients
1. All parameters specified at T
2. Human Body Model per MIL−STD−883, Method 3015, C
3. Standard IEC 61000−4−2 with C
4. These measurements performed with no external capacitor on V
Parameter Conditions Min Typ Max Units
I
= 8 mA, T
F
= 25°C, V
A
At 1 MHz, V
T
= 25°C (Notes 3 and 4) ±8
A
T
= 25°C, I
A
(Note 4)
I
= 1 A, tP = 8/20 mS
PP
Any I/O Pin to Ground (Note 4)
= −40°C to +85°C unless otherwise noted.
A
Discharge
= 150 pF, R
Discharge
Discharge
= 25°C
A
= 5 V, V
P
= 3.3 V, V
P
= 3.3 V, V
P
= 3.3 V, V
P
= 1 A, tP = 8/20 mS
PP
= 100 pF, R
= 330 W, VP = 3.3 V, VN grounded.
(V
P
floating).
P
0.60
0.60
= 0 V ±0.1 ±1.0
N
= 0 V, V
N
= 0 V, V
N
= 0 V, V
N
= 1.65 V 1.0 1.5 pF
IN
= 1.65 V 0.02 pF
IN
= 1.65 V 0.11 pF
IN
0.80
0.80
+8.8
−1.4
0.7
0.4
= 1.5 KW, VP = 3.3 V, VN grounded.
Discharge
mA
V
0.95
0.95
mA
kV
V
W
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