ON CM1293-08MR Schematic [ru]

CM1293
8-Channel Low Capacitance ESD Protection Arrays
The CM1293 family of diode arrays has been designed to provide ESD protection for electronic components or subsystems requiring minimal capacitive loading. These devices are ideal for protecting systems with high data and clock rates or for circuits requiring low capacitive loading. Each ESD channel consists of a pair of diodes in series which steer the positive or negative ESD current pulse to either the positive (V embedded between V protects the V need for a bypass capacitor that would otherwise be needed for absorbing positive ESD strikes to ground. The CM1293 will protect against ESD pulses up to (8 kV contact discharge) per the IEC 6100042 Level 4 standard.
This device is particularly wellsuited for protecting systems using highspeed ports such as USB2.0, IEEE1394 (FireWire Serial ATA, DVI, HDMI and corresponding ports in removable storage, digital camcorders, DVDRW drives and other applications where extremely low loading capacitance with ESD protection are required in a small package footprint.
Features
Eight Channels of ESD Protection
Note: For 2 and 4 Channel Devices, See the CM1293A Datasheet
Provides ESD Protection to IEC6100042
±8 kV Contact Discharge
Low Loading Capacitance of 2.0 pF Max
Low Clamping Voltage
Channel I/O to I/O Capacitance 1.5 pF Typical
Zener Diode Protects Supply Rail and Eliminates the Need for
External ByPass Capacitors
Each I/O Pin Can Withstand over 1000 ESD Strikes*
These Devices are PbFree and are RoHS Compliant
Applications
DVI Ports, HDMI Ports in Notebooks, Set Top Boxes, Digital TVs,
LCD Displays
Serial ATA Ports in Desktop PCs and Hard Disk Drives
PCI Express Ports
General Purpose HighSpeed Data Line ESD Protection
) or negative (VN) supply rail. A Zener diode is
P
and VN, offering two advantages. First, it
P
rail against ESD strikes, and second, it eliminates the
CC
®
, i.LINKt),
http://onsemi.com
MSOP10
MR SUFFIX
CASE 846AE
BLOCK DIAGRAM
CH8 V
Device Package Shipping
†For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
CH7 CH6 CH5
CH2CH1 CH4CH3
MARKING DIAGRAM
D039 = CM1293−08MR
ORDERING INFORMATION
P
V
N
CM129308MR
D039
MSOP10 (PbFree)
4000/Tape & ReelCM129308MR
*Standard test condition is IEC61000−4−2 level 4 test circuit with each pin subjected to ±8 kV contact discharge for 1000 pulses. Discharges
are timed at 1 second intervals and all 1000 strikes are completed in one continuous test run. The part is then subjected to standard production test to verify that all of the tested parameters are within spec after the 1000 strikes.
© Semiconductor Components Industries, LLC, 2011
March, 2011 Rev. 4
1 Publication Order Number:
CM1293/D
CM1293
Table 1. PIN DESCRIPTIONS
8Channel, 10Lead MSOP10 Package
Pin Name Type Description
1 CH1 I/O ESD Channel
2 CH2 I/O ESD Channel
3 CH3 I/O ESD Channel
4 CH4 I/O ESD Channel
5 V
6 CH5 I/O ESD Channel
7 CH6 I/O ESD Channel
8 V
9 CH7 I/O ESD Channel
10 CH8 I/O ESD Channel
N
P
GND Negative Voltage Supply Rail
PWR Positive Voltage Supply Rail
PACKAGE / PINOUT DIAGRAM
Top View
CH1 CH2 CH3 CH4
V
1 2 3 4 56
N
10Lead MSOP10
10
D039
CH8
9
CH7 V
8 7
P
CH6 CH5
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter Rating Units
Operating Supply Voltage (VP VN) 6.0 V
Operating Temperature Range −40 to +85 °C
Storage Temperature Range 65 to +150 °C
DC Voltage at any Channel Input (VN 0.5) to (VP + 0.5) V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter Rating Units
Operating Temperature Range −40 to +85 °C
Package Power Rating
MSOP10 Package (CM129308MR)
400
mW
http://onsemi.com
2
CM1293
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
V
V
Operating Supply Voltage (VP−VN) 3.3 5.5 V
P
I
Operating Supply Current (VP−VN) = 3.3 V 8.0
P
Diode Forward Voltage
F
Top Diode Bottom Diode
I
LEAK
C
DC
C
MUTUAL
V
ESD
Channel Leakage Current T
Channel Input Capacitance At 1 MHz, V
IN
Channel Input Capacitance Matching At 1 MHz, V
IN
Mutual Capacitance between Signal Pin and Adjacent Signal Pin
ESD Protection
Peak Discharge Voltage at any Channel Input, in System
Contact Discharge per IEC 61000−4−2 Standard
V
Channel Clamp Voltage
CL
Positive Transients Negative Transients
R
DYN
Dynamic Resistance
Positive Transients Negative Transients
1. All parameters specified at T
2. Human Body Model per MIL−STD−883, Method 3015, C
3. Standard IEC 61000−4−2 with C
4. These measurements performed with no external capacitor on V
Parameter Conditions Min Typ Max Units
I
= 8 mA, T
F
= 25°C, V
A
At 1 MHz, V
T
= 25°C (Notes 3 and 4) ±8
A
T
= 25°C, I
A
(Note 4)
I
= 1 A, tP = 8/20 mS
PP
Any I/O Pin to Ground (Note 4)
= 40°C to +85°C unless otherwise noted.
A
Discharge
= 150 pF, R
Discharge
Discharge
= 25°C
A
= 5 V, V
P
= 3.3 V, V
P
= 3.3 V, V
P
= 3.3 V, V
P
= 1 A, tP = 8/20 mS
PP
= 100 pF, R
= 330 W, VP = 3.3 V, VN grounded.
(V
P
floating).
P
0.60
0.60
= 0 V ±0.1 ±1.0
N
= 0 V, V
N
= 0 V, V
N
= 0 V, V
N
= 1.65 V 1.0 1.5 pF
IN
= 1.65 V 0.02 pF
IN
= 1.65 V 0.11 pF
IN
0.80
0.80
+8.8
1.4
0.7
0.4
= 1.5 KW, VP = 3.3 V, VN grounded.
Discharge
mA
V
0.95
0.95
mA
kV
V
W
http://onsemi.com
3
Loading...
+ 5 hidden pages