CM1213A
1, 2 and 4-Channel
Low Capacitance
ESD Protection Arrays
Product Description
The CM1213A family of diode arrays has been designed to provide
ESD protection for electronic components or subsystems requiring
minimal capacitive loading. These devices are ideal for protecting
systems with high data and clock rates or for circuits requiring low
capacitive loading. Each ESD channel consists of a pair of diodes in
series which steer the positive or negative ESD current pulse to either
the positive (V
embedded between V
protects the V
) or negative (VN) supply rail. A Zener diode is
P
and VN, offering two advantages. First, it
P
rail against ESD strikes, and second, it eliminates the
CC
SOT23−3
SO SUFFIX
CASE 318
need for a bypass capacitor that would otherwise be needed for
absorbing positive ESD strikes to ground. The CM1213A will protect
against ESD pulses up to 8 kV per the IEC 61000−4−2 standard.
These devices are particularly well−suited for protecting systems
using high−speed ports such as USB 2.0, IEEE1394 (Firewire
,
iLinkt), Serial ATA, DVI, HDMI and corresponding ports in
removable storage, digital camcorders, DVD−RW drives and other
applications where extremely low loading capacitance with ESD
protection are required in a small package footprint.
Features
One, Two, and Four Channels of ESD Protection
Note: For 6 and 8−channel Devices, See the CM1213 Datasheet
1
Provides ESD Protection to IEC61000−4−2 Level 4
8 kV Contact Discharge
Low Channel Input Capacitance of 0.85 pF Typical
Minimal Capacitance Change with Temperature and Voltage
(Note: Microdot may be in either location)
Channel Input Capacitance Matching of 0.02 pF Typical is Ideal for
Differential Dignals
Zener Diode Protects Supply Rail and Eliminates the Need for
External By−pass Capacitors
Each I/O Pin Can Withstand Over 1000 ESD Strikes*
Device Package Shipping
CM1213A−01SO SOT23−3
CM1213A−02SR
These Devices are Pb−Free and are RoHS Compliant**
Applications
USB2.0 Ports at 480 Mbps in Desktop PCs, Notebooks and Peripherals
IEEE1394 Firewire
Ports at 400 Mbps/800 Mbps
DVI Ports, HDMI Ports in Notebooks, Set Top Boxes, Digital TVs,
LCD Displays
Serial ATA Ports in Desktop PCs and Hard Disk Drives
PCI Express Ports
General Purpose High−Speed Data Line ESD Protection
**Standard test condition is IEC61000−4−2 level 4 test circuit with each pin subjected to 8 kV contact discharge for 1000 pulses. Discharges
are timed at 1 second intervals and all 1000 strikes are completed in one continuous test run. The part is then subjected to standard production
test to verify that all of the tested parameters are within spec after the 1000 strikes.
**For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
CM1213A−02SO
CM1213A−04S7
CM1213A−04MR
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
http://onsemi.com
SOT143
SR SUFFIX
CASE 527AF
SC70−6
S7 SUFFIX
CASE 419AD
MARKING DIAGRAM
XXXMG
G
XXX = Specific Device Code
M = Date Code
G = Pb−Free Package
ORDERING INFORMATION
(Pb−Free)
SOT143−4
(Pb−Free)
SC−74
(Pb−Free)
SC70−6
(Pb−Free)
MSOP−10
(Pb−Free)
MSOP−10
MR SUFFIX
CASE 846AE
XXXMG
1
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
SC−74
SO SUFFIX
CASE 318F
G
†
3,000 /
3,000 /
3,000 /
3,000 /
4,000 /
Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 8
1 Publication Order Number:
CM1213A/D
CM1213A
BLOCK DIAGRAM
V
P
CH1
V
N
CM1213A−01SO
V
P
CH1
V
N
CM1213A−02SR
CM1213A−02SO
CH2
CH4 V
CH1 CH2
CH3
P
V
N
CM1213A−04MR
CM1213A−04S7
http://onsemi.com
2
CM1213A
Table 1. PIN DESCRIPTIONS
1−Channel, 3−Lead SOT23−3 Package (CM1213A−01SO)
Pin Name Type Description
1 CH1 I/O ESD Channel
2 V
3 V
P
N
2−Channel, 4−Lead SOT143−4 Package (CM1213A−02SR)
Pin Name Type Description
1 V
N
2 CH1 I/O ESD Channel
3 CH2 I/O ESD Channel
4 V
P
2−Channel, SC−74 Package (CM1213A−02SO)
Pin Name Type Description
1 NC − No Connect
2 VN GND Negative Voltage Supply Rail
3 CH1 I/O ESD Channel
4 CH2 I/O ESD Channel
5 NC − No Connect
6 VP PWR Positive Voltage Supply Rail
4−Channel, 6−Lead SC70−6 (CM1213A−04S7)
Pin Name Type Description
1 CH1 I/O ESD Channel
2 V
N
3 CH2 I/O ESD Channel
4 CH3 I/O ESD Channel
5 V
P
6 CH4 I/O ESD Channel
4−Channel, 10−Lead MSOP−10 Package (CM1213A04MR)
Pin Name Type Description
1 CH1 I/O ESD Channel
2 NC − No Connect
3 V
P
4 CH2 I/O ESD Channel
5 NC − No Connect
6 CH3 I/O ESD Channel
7 NC − No Connect
8 V
N
9 CH4 I/O ESD Channel
10 NC − No Connect
PWR Positive Voltage Supply Rail
GND Negative Voltage Supply Rail
GND Negative Voltage Supply Rail
PWR Positive Voltage Supply Rail
GND Negative Voltage Supply Rail
PWR Positive Voltage Supply Rail
PWR Positive Voltage Supply Rail
GND Negative Voltage Supply Rail
PACKAGE/PINOUT DIAGRAMS
Top View
CH1 (1)
VP (2)
VN (1)
CH1 (2)
NC (1) VP (6)
VN (2)
CH1 (3)
CH1 1
CH2
CH1
NC
CH2
NC
1
231
3
2
3−Lead SOT23−3
Top View
1
4
D232
23
4−Lead SOT143−4
Top View
1
6
2
5
34
6−Lead SC−74
Top View
6 CH4
D38233
V
2
N
5
34
6−Lead SC70−6
Top View
1
10
D238
2
9
3
V
P
8
4
7
10−Lead MSOP−10
(3)
V
N
(4)
V
P
CH2 (3)
NC (5)
CH2 (4)
V
P
CH3
NC
CH4
V
N
NC
CH356
http://onsemi.com
3
CM1213A
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter Rating Units
Operating Supply Voltage (VP − VN) 6.0 V
Operating Temperature Range –40 to +85 C
Storage Temperature Range –65 to +150 C
DC Voltage at any channel input (VN − 0.5) to (VP + 0.5) V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter Rating Units
Operating Temperature Range –40 to +85 C
Package Power Rating
SOT23−3, SOT143−4, SC−74, and SC70−6 Packages
MSOP−10 Package
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note1)
Symbol
V
I
V
Operating Supply Voltage (VP−VN) 3.3 5.5 V
P
Operating Supply Current (VP−VN) = 3.3 V 8.0
P
Diode Forward Voltage
F
Top Diode
Bottom Diode
I
LEAK
C
DC
V
ESD
Channel Leakage Current T
Channel Input Capacitance At 1 MHz, V
IN
Channel Input Capacitance Matching At 1 MHz, V
IN
ESD Protection − Peak Discharge
Voltage at any channel input, in system
Contact discharge per
IEC 61000−4−2 standard T
V
Channel Clamp Voltage
CL
Positive Transients
Negative Transients
R
DYN
Dynamic Resistance
Positive Transients
Negative Transients
1. All parameters specified at T
2. Standard IEC 61000−4−2 with C
3. These measurements performed with no external capacitor on V
Parameter Conditions Min Ty p Max Units
I
= 8 mA; T
F
= 25C; V
A
(Note 2)
(Note 2)
= 25C (Notes 2 and 3) 8
A
T
= 25C, I
A
(Note 2)
I
PP
Any I/O pin to Ground
A
P
P
PP
= 1A, tP = 8/20 mS
(Note 2)
= –40C to +85C unless otherwise noted.
A
Discharge
= 150 pF, R
= 330 W, VP = 3.3 V, VN grounded.
Discharge
(V
P
= 25C
= 5 V, V
P
= 3.3 V, V
= 3.3 V, V
= 1A, tP = 8/20 mS
floating).
P
= 0 V 0.1 1.0
N
= 0 V, V
N
= 0 V, V
N
= 1.65 V
IN
= 1.65 V
IN
225
400
0.60
0.60
0.80
0.80
0.85 1.2 pF
0.02 pF
+10
–1.7
0.9
0.5
mW
mA
V
0.95
0.95
mA
kV
V
W
http://onsemi.com
4