ON CM1213A-01SO, CM1213A-02SO, CM1213A-02SR, CM1213A-04MR, CM1213A-04S7 Schematic [ru]

CM1213A
1, 2 and 4-Channel Low Capacitance ESD Protection Arrays
The CM1213A family of diode arrays has been designed to provide ESD protection for electronic components or subsystems requiring minimal capacitive loading. These devices are ideal for protecting systems with high data and clock rates or for circuits requiring low capacitive loading. Each ESD channel consists of a pair of diodes in series which steer the positive or negative ESD current pulse to either the positive (V embedded between V protects the V
) or negative (VN) supply rail. A Zener diode is
P
and VN, offering two advantages. First, it
P
rail against ESD strikes, and second, it eliminates the
CC
SOT233
SO SUFFIX
CASE 318
need for a bypass capacitor that would otherwise be needed for absorbing positive ESD strikes to ground. The CM1213A will protect against ESD pulses up to 8 kV per the IEC 61000−4−2 standard.
These devices are particularly wellsuited for protecting systems using highspeed ports such as USB 2.0, IEEE1394 (Firewire
, iLinkt), Serial ATA, DVI, HDMI and corresponding ports in removable storage, digital camcorders, DVDRW drives and other applications where extremely low loading capacitance with ESD protection are required in a small package footprint.
Features
One, Two, and Four Channels of ESD Protection
Note: For 6 and 8channel Devices, See the CM1213 Datasheet
1
Provides ESD Protection to IEC6100042 Level 4
8 kV Contact Discharge
Low Channel Input Capacitance of 0.85 pF TypicalMinimal Capacitance Change with Temperature and Voltage
(Note: Microdot may be in either location)
Channel Input Capacitance Matching of 0.02 pF Typical is Ideal for
Differential Dignals
Zener Diode Protects Supply Rail and Eliminates the Need for
External Bypass Capacitors
Each I/O Pin Can Withstand Over 1000 ESD Strikes*
Device Package Shipping
CM1213A01SO SOT233
CM1213A02SR
These Devices are PbFree and are RoHS Compliant**
Applications
USB2.0 Ports at 480 Mbps in Desktop PCs, Notebooks and PeripheralsIEEE1394 Firewire
Ports at 400 Mbps/800 Mbps
DVI Ports, HDMI Ports in Notebooks, Set Top Boxes, Digital TVs,
LCD Displays
Serial ATA Ports in Desktop PCs and Hard Disk DrivesPCI Express PortsGeneral Purpose HighSpeed Data Line ESD Protection
**Standard test condition is IEC6100042 level 4 test circuit with each pin subjected to 8 kV contact discharge for 1000 pulses. Discharges
are timed at 1 second intervals and all 1000 strikes are completed in one continuous test run. The part is then subjected to standard production test to verify that all of the tested parameters are within spec after the 1000 strikes.
**For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
CM1213A02SO
CM1213A04S7
CM1213A04MR
†For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
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SOT143
SR SUFFIX
CASE 527AF
SC706
S7 SUFFIX
CASE 419AD
MARKING DIAGRAM
XXXMG
G
XXX = Specific Device Code M = Date Code G = Pb−Free Package
ORDERING INFORMATION
(PbFree)
SOT1434
(PbFree)
SC74
(PbFree)
SC706
(PbFree) MSOP10
(PbFree)
MSOP10
MR SUFFIX
CASE 846AE
XXXMG
1
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
SC74 SO SUFFIX CASE 318F
G
3,000 /
3,000 /
3,000 /
3,000 /
4,000 /
Semiconductor Components Industries, LLC, 2012
January, 2012 Rev. 8
1 Publication Order Number:
CM1213A/D
CM1213A
BLOCK DIAGRAM
V
P
CH1
V
N
CM1213A01SO
V
P
CH1
V
N
CM1213A02SR CM1213A02SO
CH2
CH4 V
CH1 CH2
CH3
P
V
N
CM1213A04MR
CM1213A04S7
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2
CM1213A
Table 1. PIN DESCRIPTIONS
1Channel, 3Lead SOT233 Package (CM1213A01SO)
Pin Name Type Description
1 CH1 I/O ESD Channel
2 V
3 V
P
N
2Channel, 4Lead SOT1434 Package (CM1213A02SR)
Pin Name Type Description
1 V
N
2 CH1 I/O ESD Channel
3 CH2 I/O ESD Channel
4 V
P
2Channel, SC74 Package (CM1213A02SO)
Pin Name Type Description
1 NC No Connect
2 VN GND Negative Voltage Supply Rail
3 CH1 I/O ESD Channel
4 CH2 I/O ESD Channel
5 NC No Connect
6 VP PWR Positive Voltage Supply Rail
4Channel, 6Lead SC706 (CM1213A04S7)
Pin Name Type Description
1 CH1 I/O ESD Channel
2 V
N
3 CH2 I/O ESD Channel
4 CH3 I/O ESD Channel
5 V
P
6 CH4 I/O ESD Channel
4Channel, 10Lead MSOP10 Package (CM1213A04MR)
Pin Name Type Description
1 CH1 I/O ESD Channel
2 NC No Connect
3 V
P
4 CH2 I/O ESD Channel
5 NC No Connect
6 CH3 I/O ESD Channel
7 NC No Connect
8 V
N
9 CH4 I/O ESD Channel
10 NC No Connect
PWR Positive Voltage Supply Rail
GND Negative Voltage Supply Rail
GND Negative Voltage Supply Rail
PWR Positive Voltage Supply Rail
GND Negative Voltage Supply Rail
PWR Positive Voltage Supply Rail
PWR Positive Voltage Supply Rail
GND Negative Voltage Supply Rail
PACKAGE/PINOUT DIAGRAMS
Top View
CH1 (1)
VP (2)
VN (1)
CH1 (2)
NC (1) VP (6)
VN (2)
CH1 (3)
CH1 1
CH2
CH1
NC
CH2
NC
1
231
3
2
3Lead SOT233
Top View
1
4
D232
23
4Lead SOT1434
Top View
1
6
2
5
34
6Lead SC74
Top View
6 CH4
D38233
V
2
N
5
34
6Lead SC706
Top View
1
10
D238
2
9
3
V
P
8
4
7
10Lead MSOP10
(3)
V
N
(4)
V
P
CH2 (3)
NC (5)
CH2 (4)
V
P
CH3
NC CH4 V
N
NC CH356
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CM1213A
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter Rating Units
Operating Supply Voltage (VP VN) 6.0 V
Operating Temperature Range –40 to +85 C
Storage Temperature Range –65 to +150 C
DC Voltage at any channel input (VN 0.5) to (VP + 0.5) V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter Rating Units
Operating Temperature Range –40 to +85 C
Package Power Rating
SOT233, SOT1434, SC74, and SC706 Packages MSOP10 Package
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note1)
Symbol
V
I
V
Operating Supply Voltage (VP−VN) 3.3 5.5 V
P
Operating Supply Current (VP−VN) = 3.3 V 8.0
P
Diode Forward Voltage
F
Top Diode Bottom Diode
I
LEAK
C
DC
V
ESD
Channel Leakage Current T
Channel Input Capacitance At 1 MHz, V
IN
Channel Input Capacitance Matching At 1 MHz, V
IN
ESD Protection Peak Discharge Voltage at any channel input, in system
Contact discharge per
IEC 61000−4−2 standard T
V
Channel Clamp Voltage
CL
Positive Transients Negative Transients
R
DYN
Dynamic Resistance
Positive Transients Negative Transients
1. All parameters specified at T
2. Standard IEC 61000−4−2 with C
3. These measurements performed with no external capacitor on V
Parameter Conditions Min Ty p Max Units
I
= 8 mA; T
F
= 25C; V
A
(Note 2)
(Note 2)
= 25C (Notes 2 and 3) 8
A
T
= 25C, I
A
(Note 2)
I
PP
Any I/O pin to Ground
A
P
P
PP
= 1A, tP = 8/20 mS
(Note 2)
= –40C to +85C unless otherwise noted.
A
Discharge
= 150 pF, R
= 330 W, VP = 3.3 V, VN grounded.
Discharge
(V
P
= 25C
= 5 V, V
P
= 3.3 V, V
= 3.3 V, V
= 1A, tP = 8/20 mS
floating).
P
= 0 V 0.1 1.0
N
= 0 V, V
N
= 0 V, V
N
= 1.65 V
IN
= 1.65 V
IN
225 400
0.60
0.60
0.80
0.80
0.85 1.2 pF
0.02 pF
+10 –1.7
0.9
0.5
mW
mA
V
0.95
0.95
mA
kV
V
W
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