CM1213
6 and 8-Channel
Low Capacitance ESD
Protection Arrays
Product Description
The CM1213 family of diode arrays has been designed to provide
ESD protection for electronic components or sub−systems requiring
minimal capacitive loading. These devices are ideal for protecting
systems with high data and clock rates or for circuits requiring low
capacitive loading. Each ESD channel consists of a pair of diodes in
series which steer the positive or negative ESD current pulse to either
the positive (V
embedded between V
protects the V
need for a bypass capacitor that would otherwise be needed for
absorbing positive ESD strikes to ground. The CM1213 will protect
against ESD pulses up to ±8 kV per the IEC 61000−4−2 standard.
These devices are particularly well−suited for protecting systems
using high−speed ports such as USB2.0, IEEE1394 (Firewire
iLinkt), Serial ATA, DVI, HDMI and corresponding ports in
removable storage, digital camcorders, DVD−RW drives and other
applications where extremely low loading capacitance with ESD
protection are required in a small package footprint.
Features
• 6 or 8 Channels of ESD Protection
Note: For 1, 2, and 4 Channel Devices, See the CM1213A Datasheet
• Provides ESD Protection to IEC61000−4−2 Level 4
• ±8 kV Contact Discharge
• Low Channel Input Capacitance of 1.0 pF Typical
• Minimal Capacitance Change with Temperature and Voltage
• Channel Input Capacitance Matching of 0.02 pF Typical is Ideal for
Differential Signals
• Mutual Capacitance between Signal Pin and Adjacent Signal Pin
−0.11 pF Typical
• Zener Diode Protects Supply Rail and Eliminates the Need for
External By−pass Capacitors
• Each I/O Pin Can Withstand Over 1000 ESD Strikes*
• Available in SOIC and MSOP
• These Devices are Pb−Free and are RoHS Compliant
Applications
• USB2.0 Ports at 480 Mbps in Desktop PCs, Notebooks
and Peripherals
• IEEE1394 Firewire
• DVI Ports, HDMI Ports in Notebooks, Set Top Boxes, Digital TVs,
LCD Displays
• Serial ATA Ports in Desktop PCs and Hard Disk Drives
• PCI Express Ports
• General Purpose High−speed Data Line ESD Protection
• Handheld PCs/PDAs
) or negative (VN) supply rail. A Zener diode is
P
CC
and VN, offering two advantages. First, it
P
rail against ESD strikes, and second, it eliminates the
®
Ports at 400 Mbps / 800 Mbps
®
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SOIC−8
SM SUFFIX
CASE 751AC
CH6 V
MSOP−8
MR SUFFIX
CASE 846AD
BLOCK DIAGRAMS
CH5 CH4
P
,
CH1 CH2 CH3
CH8 V
CH2CH1 CH4CH3
ORDERING INFORMATION
Device Package Shipping
CM1213−06SM SOIC−8
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
N
CM1213−06SM
CM1213−06MR
CH7 CH6 CH5
P
V
N
CM1213−08MR
(Pb−Free)
MSOP−8
(Pb−Free)
MSOP−10
(Pb−Free)
MSOP−10
MR SUFFIX
CASE 846AE
†
2500/Tape & Reel
4000/Tape & ReelCM1213−06MR
4000/Tape & ReelCM1213−08MR
*Standard test condition is IEC61000−4−2 level 4 test circuit with each pin subjected to ±8 kV contact discharge for 1000 pulses. Discharges
are timed at 1 second intervals and all 1000 strikes are completed in one continuous test run. The part is then subjected to standard production
test to verify that all of the tested parameters are within spec after the 1000 strikes.
© Semiconductor Components Industries, LLC, 2013
June, 2013 − Rev. 5
1 Publication Order Number:
CM1213/D
CM1213
Table 1. PIN DESCRIPTIONS
6−Channel, 8−Lead MSOP−8/SOIC−8 Packages
Pin Name Type Description
1 CH1 I/O ESD Channel
2 CH2 I/O ESD Channel
3 V
N
4 CH3 I/O ESD Channel
5 CH4 I/O ESD Channel
6 CH5 I/O ESD Channel
7 V
P
8 CH6 I/O ESD Channel
8−Channel, 10−Lead MSOP−10 Package
Pin Name Type Description
1 CH1 I/O ESD Channel
2 CH2 I/O ESD Channel
3 CH3 I/O ESD Channel
4 CH4 I/O ESD Channel
5 V
N
6 CH5 I/O ESD Channel
7 CH6 I/O ESD Channel
8 V
P
9 CH7 I/O ESD Channel
10 CH8 I/O ESD Channel
GND Negative voltage supply rail
PWR Positive voltage supply rail
GND Negative voltage supply rail
PWR Positive voltage supply rail
PACKAGE / PINOUT DIAGRAMS
Top View
1
CH1
CH2
V
N
CH3
8−Lead SOIC−8
CH1
CH2
V
N
CH3
8−Lead MSOP−8
CH1
CH2
CH3
CH4
V
N
10−Lead MSOP−10
8
D136
2
7
3
6
4
5
Top View
1
8
D137
2
7
3
6
4
5
Top View
1
10
D138
2
9
3
8
4
7
56
CH6
V
P
CH5
CH4
CH6
V
P
CH5
CH4
CH8
CH7
V
P
CH6
CH5
GENERIC MARKING DIAGRAMS
CM1213−06MR CM1213−08MRCM1213−06SM
D136
YYWW
XXXX
D137
XXXXX
YYWW
XXXXX = Lot Number
YY = Year
WW = Work Week
D138
XXXXX
YYWW
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CM1213
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter Rating Units
Operating Supply Voltage (VP − VN) 6.0 V
Operating Temperature Range −40 to +85 °C
Storage Temperature Range −65 to +150 °C
DC Voltage at any channel input (VN − 0.5) to (VP + 0.5) V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter Rating Units
Operating Temperature Range −40 to +85 °C
Package Power Rating
MSOP−8 Package (CM1213−06MR)
MSOP−10 Package (CM1213−08MR)
SOIC−8 Package (CM1213−06SM)
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
V
V
Operating Supply Voltage (VP−VN) 3.3 5.5 V
P
I
Operating Supply Current (VP−VN) = 3.3 V 8.0
P
Diode Forward Voltage
F
Top Diode
Bottom Diode
I
LEAK
C
DC
C
MUTUAL
V
ESD
Channel Leakage Current T
Channel Input Capacitance At 1 MHz, V
IN
Channel Input Capacitance Matching At 1 MHz, V
IN
Mutual Capacitance between signal pin
and adjacent signal pin
ESD Protection
Peak Discharge Voltage at any
channel input, in system
Contact discharge per
IEC 61000−4−2 standard
V
Channel Clamp Voltage
CL
Positive Transients
Negative Transients
R
DYN
Dynamic Resistance
Positive Transients
Negative Transients
1. All parameters specified at T
2. Human Body Model per MIL−STD−883, Method 3015, C
3. Standard IEC 61000−4−2 with C
4. These measurements performed with no external capacitor on V
Parameter Conditions Min Typ Max Units
I
= 8 mA; T
F
= 25°C; V
A
At 1 MHz, V
T
= 25°C (Notes 3 and 4) ±8
A
T
= 25°C, I
A
(Note 4)
I
= 1 A, tP = 8/20 mS
PP
Any I/O pin to Ground (Note 4)
= −40°C to +85°C unless otherwise noted.
A
Discharge
= 150 pF, R
Discharge
Discharge
= 25°C
A
= 5 V, V
P
= 3.3 V, V
P
= 3.3 V, V
P
= 3.3 V, V
P
= 1 A, tP = 8/20 mS
PP
= 100 pF, R
= 330 W, VP = 3.3 V, VN grounded.
(V
P
floating).
P
400
400
600
0.60
0.60
= 0 V ±0.1 ±1.0
N
= 0 V, V
N
= 0 V, V
N
= 0 V, V
N
= 1.65 V 1.0 1.5 pF
IN
= 1.65 V 0.02 pF
IN
= 1.65 V 0.11 pF
IN
0.80
0.80
+8.8
−1.4
0.7
0.4
= 1.5 KW, VP = 3.3 V, VN grounded.
Discharge
mW
mA
V
0.95
0.95
mA
kV
V
W
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