ON CM1213-06MR, CM1213-06SM, CM1213-08MR Schematic [ru]

CM1213
6 and 8-Channel Low Capacitance ESD Protection Arrays
The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or subsystems requiring minimal capacitive loading. These devices are ideal for protecting systems with high data and clock rates or for circuits requiring low capacitive loading. Each ESD channel consists of a pair of diodes in series which steer the positive or negative ESD current pulse to either the positive (V embedded between V protects the V need for a bypass capacitor that would otherwise be needed for absorbing positive ESD strikes to ground. The CM1213 will protect against ESD pulses up to ±8 kV per the IEC 61000−4−2 standard.
These devices are particularly wellsuited for protecting systems using highspeed ports such as USB2.0, IEEE1394 (Firewire iLinkt), Serial ATA, DVI, HDMI and corresponding ports in removable storage, digital camcorders, DVDRW drives and other applications where extremely low loading capacitance with ESD protection are required in a small package footprint.
Features
6 or 8 Channels of ESD Protection
Note: For 1, 2, and 4 Channel Devices, See the CM1213A Datasheet
Provides ESD Protection to IEC6100042 Level 4
±8 kV Contact Discharge
Low Channel Input Capacitance of 1.0 pF Typical
Minimal Capacitance Change with Temperature and Voltage
Channel Input Capacitance Matching of 0.02 pF Typical is Ideal for
Differential Signals
Mutual Capacitance between Signal Pin and Adjacent Signal Pin
0.11 pF Typical
Zener Diode Protects Supply Rail and Eliminates the Need for
External Bypass Capacitors
Each I/O Pin Can Withstand Over 1000 ESD Strikes*
Available in SOIC and MSOP
These Devices are PbFree and are RoHS Compliant
Applications
USB2.0 Ports at 480 Mbps in Desktop PCs, Notebooks
and Peripherals
IEEE1394 Firewire
DVI Ports, HDMI Ports in Notebooks, Set Top Boxes, Digital TVs,
LCD Displays
Serial ATA Ports in Desktop PCs and Hard Disk Drives
PCI Express Ports
General Purpose Highspeed Data Line ESD Protection
Handheld PCs/PDAs
) or negative (VN) supply rail. A Zener diode is
P
CC
and VN, offering two advantages. First, it
P
rail against ESD strikes, and second, it eliminates the
®
Ports at 400 Mbps / 800 Mbps
®
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SOIC8
SM SUFFIX
CASE 751AC
CH6 V
MSOP8
MR SUFFIX
CASE 846AD
BLOCK DIAGRAMS
CH5 CH4
P
,
CH1 CH2 CH3
CH8 V
CH2CH1 CH4CH3
ORDERING INFORMATION
Device Package Shipping
CM121306SM SOIC8
†For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
V
N
CM121306SM CM121306MR
CH7 CH6 CH5
P
V
N
CM121308MR
(PbFree)
MSOP8
(PbFree) MSOP10
(PbFree)
MSOP10
MR SUFFIX
CASE 846AE
2500/Tape & Reel
4000/Tape & ReelCM121306MR
4000/Tape & ReelCM121308MR
*Standard test condition is IEC61000−4−2 level 4 test circuit with each pin subjected to ±8 kV contact discharge for 1000 pulses. Discharges
are timed at 1 second intervals and all 1000 strikes are completed in one continuous test run. The part is then subjected to standard production test to verify that all of the tested parameters are within spec after the 1000 strikes.
© Semiconductor Components Industries, LLC, 2013
June, 2013 Rev. 5
1 Publication Order Number:
CM1213/D
CM1213
Table 1. PIN DESCRIPTIONS
6Channel, 8Lead MSOP8/SOIC8 Packages
Pin Name Type Description
1 CH1 I/O ESD Channel
2 CH2 I/O ESD Channel
3 V
N
4 CH3 I/O ESD Channel
5 CH4 I/O ESD Channel
6 CH5 I/O ESD Channel
7 V
P
8 CH6 I/O ESD Channel
8Channel, 10Lead MSOP10 Package
Pin Name Type Description
1 CH1 I/O ESD Channel
2 CH2 I/O ESD Channel
3 CH3 I/O ESD Channel
4 CH4 I/O ESD Channel
5 V
N
6 CH5 I/O ESD Channel
7 CH6 I/O ESD Channel
8 V
P
9 CH7 I/O ESD Channel
10 CH8 I/O ESD Channel
GND Negative voltage supply rail
PWR Positive voltage supply rail
GND Negative voltage supply rail
PWR Positive voltage supply rail
PACKAGE / PINOUT DIAGRAMS
Top View
1
CH1 CH2
V
N
CH3
8Lead SOIC8
CH1 CH2
V
N
CH3
8Lead MSOP8
CH1 CH2 CH3 CH4
V
N
10Lead MSOP10
8
D136
2
7
3
6
4
5
Top View
1
8
D137
2
7
3
6
4
5
Top View
1
10
D138
2
9
3
8
4
7
56
CH6 V
P
CH5 CH4
CH6 V
P
CH5 CH4
CH8 CH7
V
P
CH6 CH5
GENERIC MARKING DIAGRAMS
CM121306MR CM121308MRCM121306SM
D136
YYWW
XXXX
D137 XXXXX YYWW
XXXXX = Lot Number YY = Year WW = Work Week
D138 XXXXX YYWW
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CM1213
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter Rating Units
Operating Supply Voltage (VP VN) 6.0 V
Operating Temperature Range −40 to +85 °C
Storage Temperature Range 65 to +150 °C
DC Voltage at any channel input (VN 0.5) to (VP + 0.5) V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter Rating Units
Operating Temperature Range −40 to +85 °C
Package Power Rating
MSOP8 Package (CM121306MR) MSOP10 Package (CM121308MR) SOIC8 Package (CM121306SM)
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
V
V
Operating Supply Voltage (VP−VN) 3.3 5.5 V
P
I
Operating Supply Current (VP−VN) = 3.3 V 8.0
P
Diode Forward Voltage
F
Top Diode Bottom Diode
I
LEAK
C
DC
C
MUTUAL
V
ESD
Channel Leakage Current T
Channel Input Capacitance At 1 MHz, V
IN
Channel Input Capacitance Matching At 1 MHz, V
IN
Mutual Capacitance between signal pin and adjacent signal pin
ESD Protection
Peak Discharge Voltage at any channel input, in system
Contact discharge per IEC 61000−4−2 standard
V
Channel Clamp Voltage
CL
Positive Transients Negative Transients
R
DYN
Dynamic Resistance
Positive Transients Negative Transients
1. All parameters specified at T
2. Human Body Model per MIL−STD−883, Method 3015, C
3. Standard IEC 61000−4−2 with C
4. These measurements performed with no external capacitor on V
Parameter Conditions Min Typ Max Units
I
= 8 mA; T
F
= 25°C; V
A
At 1 MHz, V
T
= 25°C (Notes 3 and 4) ±8
A
T
= 25°C, I
A
(Note 4)
I
= 1 A, tP = 8/20 mS
PP
Any I/O pin to Ground (Note 4)
= 40°C to +85°C unless otherwise noted.
A
Discharge
= 150 pF, R
Discharge
Discharge
= 25°C
A
= 5 V, V
P
= 3.3 V, V
P
= 3.3 V, V
P
= 3.3 V, V
P
= 1 A, tP = 8/20 mS
PP
= 100 pF, R
= 330 W, VP = 3.3 V, VN grounded.
(V
P
floating).
P
400 400 600
0.60
0.60
= 0 V ±0.1 ±1.0
N
= 0 V, V
N
= 0 V, V
N
= 0 V, V
N
= 1.65 V 1.0 1.5 pF
IN
= 1.65 V 0.02 pF
IN
= 1.65 V 0.11 pF
IN
0.80
0.80
+8.8
1.4
0.7
0.4
= 1.5 KW, VP = 3.3 V, VN grounded.
Discharge
mW
mA
V
0.95
0.95
mA
kV
V
W
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