ON BZX84B12LT1G, BZX84B15LT1G, BZX84B16LT1G, BZX84B18LT1G, BZX84B22LT1G Schematic [ru]

BZX84BxxxLT1G,
BZX84CxxxLT1G Series,
SZBZX84BxxxLT1G,
SZBZX84CxxxLT1G Series

Zener Voltage Regulators

225 mW SOT−23 Surface Mount

http://onsemi.com

This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.

Features

• 225 mW Rating on FR−4 or FR−5 Board

• Zener Breakdown Voltage Range − 2.4 V to 75 V

• Package Designed for Optimal Automated Board Assembly

• Small Package Size for High Density Applications

• ESD Rating of Class 3 (> 16 kV) per Human Body Model

• Tight Tolerance Series Available (See Page 4)

• SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Mechanical Characteristics
CASE:

Void-free, transfer-molded, thermosetting plastic case

FINISH: Corrosion resistant finish, easily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260°C for 10 Seconds

POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0

SOT−23

CASE 318

STYLE 8

3

Cathode

MARKING DIAGRAM

xxx M G

G

1

xxx = Device Code
M = Date Code*
G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

Device Package Shipping

BZX84CxxxLT1G SOT−23

SZBZX84CxxxLT1G SOT−23

BZX84CxxxLT3G 10,000 /

SZBZX84CxxxLT3G 10,000 /

BZX84BxxxLT1G SOT−23

SZBZX84BxxxLT1G SOT−23

BZX84BxxxLT3G 10,000 /

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

(Pb−Free)

(Pb−Free)

SOT−23

(Pb−Free)

SOT−23

(Pb−Free)

(Pb−Free)

(Pb−Free)

SOT−23

(Pb−Free)

1

Anode

3,000 /

Tape & Reel

3,000 /

Tape & Reel

Tape & Reel

Tape & Reel

3,000 /

Tape & Reel

3,000 /

Tape & Reel

Tape & Reel

†

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2012

October, 2012 − Rev. 16

1 Publication Order Number:

DEVICE MARKING INFORMATION

See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.

BZX84C2V4LT1/D

BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G

Series

MAXIMUM RATINGS

Rating Symbol Max Unit

Total Power Dissipation on FR−5 Board,

(Note 1) @ T
Derated above 25°C

= 25°C

A

Thermal Resistance, Junction−to−Ambient

Total Power Dissipation on Alumina

Substrate, (Note 2) @ T
Derated above 25°C

= 25°C

A

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature Range TJ, T

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.

1. FR−5 = 1.0 X 0.75 X 0.62 in.

2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.

ELECTRICAL CHARACTERISTICS

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C
unless otherwise noted, V

Symbol

V

I

Z

V

V

QV

Reverse Zener Voltage @ I

Z

Reverse Current

ZT

Maximum Zener Impedance @ I

ZT

I

Reverse Leakage Current @ V

R

Reverse Voltage

R

I

Forward Current

F

Forward Voltage @ I

F

Maximum Temperature Coefficient of V

Z

C Max. Capacitance @ VR = 0 and f = 1 MHz

= 0.90 V Max. @ IF = 10 mA)

F

Parameter

ZT

ZT

R

F

Z

P

D

R

q

JA

P

D

R

q

JA

stg

−65 to +150 °C

I

I

F

VRV

Z

I

V

R

I

ZT

Zener Voltage Regulator

F

225

1.8

556

300

2.4

417

mW

mW/°C

°C/W

mW

mW/°C

°C/W

V

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2

BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G

Series

ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)

VZ1 (Volts)

@I

=5mA

ZT1

(Note 3)

Device*

BZX84C2V4LT1G Z11 2.2 2.4 2.6 100 1.7 2.1 600 2.6 3.2 50 50 1 −3.5 0 450

BZX84C2V7LT1G Z12 2.5 2.7 2.9 100 1.9 2.4 600 3 3.6 50 20 1 −3.5 0 450

BZX84C3V0LT1G Z13 2.8 3 3.2 95 2.1 2.7 600 3.3 3.9 50 10 1 −3.5 0 450

BZX84C3V3LT1G Z14 3.1 3.3 3.5 95 2.3 2.9 600 3.6 4.2 40 5 1 −3.5 0 450

BZX84C3V6LT1G Z15 3.4 3.6 3.8 90 2.7 3.3 600 3.9 4.5 40 5 1 −3.5 0 450

BZX84C3V9LT1G Z16 3.7 3.9 4.1 90 2.9 3.5 600 4.1 4.7 30 3 1 −3.5 −2.5 450

BZX84C4V3LT1G W9 4 4.3 4.6 90 3.3 4 600 4.4 5.1 30 3 1 −3.5 0 450

BZX84C4V7LT1/T3G Z1 4.4 4.7 5 80 3.7 4.7 500 4.5 5.4 15 3 2 −3.5 0.2 260

BZX84C5V1LT1/T3G Z2 4.8 5.1 5.4 60 4.2 5.3 480 5 5.9 15 2 2 −2.7 1.2 225

BZX84C5V6LT1/T3G Z3 5.2 5.6 6 40 4.8 6 400 5.2 6.3 10 1 2 −2.0 2.5 200

BZX84C6V2LT1/T3G Z4 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185

BZX84C6V8LT1/T3G Z5 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155

BZX84C7V5LT1G Z6 7 7.5 7.9 15 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140

BZX84C8V2LT1G Z7 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5 3.2 6.2 135

BZX84C9V1LT1/T3G Z8 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6 3.8 7.0 130

BZX84C10LT1G Z9 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130

BZX84C11LT1G Y1 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130

BZX84C12LT1G Y2 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130

BZX84C13LT1G Y3 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8 7.0 11.0 120

BZX84C15LT1/T3G Y4 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 11 0

BZX84C16LT1G Y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105

BZX84C18LT1/T3G Y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100

BZX84C20LT1G Y7 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18.0 85

BZX84C22LT1G Y8 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20.0 85

BZX84C24LT1G Y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80

Device*

BZX84C27LT1G Y10 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 0.05 18.9 21.4 25.3 70

BZX84C30LT1G Y11 28 30 32 80 27.8 32 300 28.1 32.4 50 0.05 21 24.4 29.4 70

BZX84C33LT1/T3G Y12 31 33 35 80 30.8 35 325 31.1 35.4 55 0.05 23.1 27.4 33.4 70

BZX84C36LT1G Y13 34 36 38 90 33.8 38 350 34.1 38.4 60 0.05 25.2 30.4 37.4 70

BZX84C39LT1G Y14 37 39 41 130 36.7 41 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45

BZX84C43LT1G Y15 40 43 46 150 39.7 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40

BZX84C47LT1G Y16 44 47 50 170 43.7 50 375 44.1 50.5 90 0.05 32.9 42.0 51.8 40

BZX84C51LT1G Y17 48 51 54 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40

BZX84C56LT1G Y18 52 56 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40

BZX84C62LT1G Y19 58 62 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35

BZX84C68LT1G Y20 64 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35

BZX84C75LT1G Y21 70 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35

Device

Marking

Device

Marking

Min Nom Max Min Max Min Max

VZ1 Below

@I

=2mA

ZT1

Min Nom Max Min Max Min Max

Z

@ I

5 mA

Z

Below

@ I

2 mA

(W)

ZT1

ZT1

ZT1

ZT1

3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.

*Include SZ-prefix devices where applicable.

=

=

VZ2 (V)

@I

ZT2

(Note 3)

VZ2 Below

@I

ZT2

=1mA

= 0.1 m-

A

Z

ZT2

(W)

@ I

ZT2

1 mA

Z

ZT2

Below

@ I

ZT4

0.5 mA

=

=

VZ3 (V)

@I

ZT3

(Note 3)

VZ3 Below

@I

ZT3

=20mA

=10mA

Z

@ I

20 mA

Z

Below

@ I

10 mA

(W)

ZT3

ZT3

ZT3

ZT3

=

=

Max Reverse

Leakage
Current

V

I

R

@

Volts

mA

Max Reverse

Leakage
Current

V

I

R

@

(V)

mA

R

R

q

VZ

(mV/k)

= 5 mA

@ I

ZT1

Min Max

q

VZ

(mV/k) Below

@ I

= 2 mA

ZT1

Min Max

@ V
f = 1 MHz

@ V
f = 1 MHz

C (pF)

R

C (pF)

R

= 0

= 0

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3

BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G

Series

ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)

Max Reverse

ZZT (W) @

= 5 mA

VZ (Volts) @ IZT = 5 mA

Device

Device*

BZX84B4V7LT1G T10 4.61 4.7 4.79 80 3 2 −3.5 0.2 260

BZX84B5V1LT1G T11 5.00 5.1 5.20 60 2 2 −2.7 1.2 225

BZX84B5V6LT1G T12 5.49 5.6 5.71 40 1 2 −2 2.5 200

BZX84B6V2LT1G T13 6.08 6.2 6.32 10 3 4 0.4 3.7 185

BZX84B6V8LT1G T14 6.66 6.8 6.94 15 2 4 1.2 4.5 155

BZX84B7V5LT1G T15 7.35 7.5 7.65 15 1 5 2.5 5.3 140

BZX84B8V2LT1G T16 8.04 8.2 8.36 15 0.7 5 3.2 6.2 135

BZX84B9V1LT1G T17 8.92 9.1 9.28 15 0.5 6 3.8 7 130

BZX84B12LT1G T18 11.8 12 12.2 25 0.1 8 6 10 130

BZX84B15LT1G T22 14.7 15 15.3 30 0.05 10.5 9.2 13 11 0

BZX84B16LT1G T19 15.7 16 16.3 40 0.05 11.2 10.4 14 105

BZX84B18LT1G T20 17.6 18 18.4 45 0.05 12.6 12.4 16 100

BZX84B22LT1G T24 21.6 22 22.4 55 0.05 15.4 16.4 20 85

BZX84B24LT1G T25 23.5 24 24.5 70 0.05 16.8 18.4 22 80

Marking

(Note 4)

Min Nom Max Max

I

ZT

(Note 4)

Leakage

Current

I

R

mA

V

R

@

Volts Min Max

4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.

*Include SZ-prefix devices where applicable.

@ I

q

VZ

(mV/k)

= 5 mA

ZT

@ V
f = 1 MHz

C (pF)

R

=0,

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4

BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G

Series

TYPICAL CHARACTERISTICS

, TEMPERATURE COEFFICIENT (mV/ C)°θ

VZ

-2

-3

1000

100

8

7

6

5

4

3

2

1

0

-1

IZ = 1 mA

TYPICAL TC VALUES

VZ @ I

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 1. Temperature Coefficients

(Temperature Range −55°C to +150°C)

TJ = 25°C
I

= 0.1 I

Z(AC)

f = 1 kHz

5 mA

Z(DC)

100

TYPICAL TC VALUES

VZ @ I

ZT

10

, TEMPERATURE COEFFICIENT (mV/ C)°θ

VZ

1

12111098765432

10 100

V

, NOMINAL ZENER VOLTAGE (V)

Z

ZT

Figure 2. Temperature Coefficients

(Temperature Range −55°C to +150°C)

1000

75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)

100

20 mA

10

, DYNAMIC IMPEDANCE ( )Ω

ZT

Z

1

, NOMINAL ZENER VOLTAGE

V

Z

101

Figure 3. Effect of Zener Voltage on

100

10

, FORWARD CURRENT (mA)

F

I

150°C

1

75°C 25°C 0°C

1.21.11.00.90.80.70.60.50.4

VF, FORWARD VOLTAGE (V)

Figure 4. Typical Forward Voltage

Zener Impedance

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5

BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G

Series

TYPICAL CHARACTERISTICS

1000

100

10

C, CAPACITANCE (pF)

1

100

10

0 V BIAS
1 V BIAS

BIAS AT
50% OF V

NOM

Z

101

, NOMINAL ZENER VOLTAGE (V)

V

Z

Figure 5. Typical Capacitance

TA = 25°C

TA = 25°C

100

1000

100

0.1

0.01

, LEAKAGE CURRENT ( A)μ

R

I

0.001

0.0001

0.00001

100

10

1

+150°C

+25°C

-55°C

80706050403020100

90

, NOMINAL ZENER VOLTAGE (V)

V

Z

Figure 6. Typical Leakage Current

TA = 25°C

10

1

, ZENER CURRENT (mA)

Z

0.1

I

0.01

, ZENER VOLTAGE (V)

V

Z

Figure 7. Zener Voltage versus Zener Current

(V

Up to 12 V)

Z

1

, ZENER CURRENT (mA)

Z

0.1

I

0.01

1086420

12

10 30 50 70 90

VZ, ZENER VOLTAGE (V)

Figure 8. Zener Voltage versus Zener Current

(12 V to 91 V)

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6

BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G

Series

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

D

H

SEE VIEW C

E

c

0.25

3

E

12

b

e

q

A

L

A1

L1

VIEW C

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.

DIMAMIN NOM MAX MIN

A1 0.01 0.06 0.10 0.001

b 0.37 0.44 0.50 0.015
c 0.09 0.13 0.18 0.003
D 2.80 2.90 3.04 0.110
E 1.20 1.30 1.40 0.047
e 1.78 1.90 2.04 0.070

L 0.10 0.20 0.30 0.004

L1

H

STYLE 8:

PIN 1. ANODE

MILLIMETERS

0.89 1.00 1.11 0.035

0.35 0.54 0.69 0.014 0.021 0.029

2.10 2.40 2.64 0.083 0.094 0.104

E

0 −−− 10 0 −−− 10q°°°°

2. NO CONNECTION

3. CATHODE

INCHES

NOM MAX

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

SOLDERING FOOTPRINT*

0.95

0.95

0.037

0.9

0.035

0.8

0.031

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

0.037

SCALE 10:1

2.0

0.079

ǒ

inches

mm

Ǔ

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [e-mail]

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: [phone]

Japan Customer Focus Center

Phone: 81−3−5817−1050

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ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local
Sales Representative

BZX84C2V4LT1/D