ON BSS84L, BVSS84L Schematic [ru]

BSS84L, BVSS84L

Power MOSFET
Single P-Channel SOT-23

-50 V, 10 W

• SOT−23 Surface Mount Package Saves Board Space

• AEC Q101 Qualified and PPAP Capable − BVSS84L

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Drain−to−Source Voltage V

Gate−to−Source Voltage − Continuous V

Drain Current

Continuous @ T
Pulsed Drain Current (t

Total Power Dissipation @ TA = 25°C P

Operating and Storage Temperature

Range

Thermal Resistance − Junction−to−Ambient

Maximum Lead Temperature for Soldering

Purposes, for 10 seconds

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

= 25°C unless otherwise noted)

J

= 25°C

A

≤ 10 ms)

p

DSS

I

I

DM

TJ, T

R

T

GS

D

q

50 Vdc

± 20 Vdc

130
520

stg

225 mW

− 55 to
150

556 °C/W

260 °C

D

JA

L

mA

°C

http://onsemi.com

R

V

(BR)DSS

−50 V

1

P−Channel

3

1

2

3

2

MAX

DS(ON)

10 W @ 10 V

SOT−23
CASE 318
STYLE 21

MARKING DIAGRAM & PIN ASSIGNMENT

3

Drain

© Semiconductor Components Industries, LLC, 2012

October, 2012 − Rev. 8

PD MG

G

21

Gate

PD = Specific Device Code
M = Date Code
G = Pb−Free Package

(*Note: Microdot may be in either location)

Source

ORDERING INFORMATION

Device Package Shipping

BSS84LT1G SOT−23

(Pb−Free)

BVSS84LT1G SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

1 Publication Order Number:

3000 / Tape & Reel

3000 / Tape & Reel

†

BSS84LT1/D

BSS84L, BVSS84L

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

A

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

= 0 Vdc, ID = −250 mAdc)

(V

GS

V

Zero Gate Voltage Drain Current

(V

= −25 Vdc, VGS = 0 Vdc)

DS

(VDS = −50 Vdc, VGS = 0 Vdc)
(VDS = −50 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) I

(BR)DSS

I

DSS

GSS

−50 − − Vdc

−

−

−

−

−

−

−0.1

−15

−60

− − ±10 nAdc

ON CHARACTERISTICS (Note 1)

Gate−Source Threaded Voltage (V

= VGS, ID = −250 mA)

DS

Static Drain−to−Source On−Resistance (VGS = −5.0 Vdc, ID = −100 mAdc) R

V

GS(th)

DS(on)

−0.9 − −2.0 Vdc

− 4.7 10

Transfer Admittance (VDS = −25 Vdc, ID = −100 mAdc, f = 1.0 kHz) |yfs| 50 − − mS

DYNAMIC CHARACTERISTICS

Input Capacitance

VDS = 5.0 Vdc C

Output Capacitance VDS = 5.0 Vdc C

Transfer Capacitance VDG = 5.0 Vdc C

iss

oss

rss

− 36 −

− 17 −

− 6.5 −

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

VDD = −15 Vdc, ID = −2.5 Adc,

= 50 W

R

L

t

Fall Time t

Gate Charge VDD = −40 Vdc, ID = −0.5 A,

V

= −10 V

GS

d(on)

r

d(off)

f

Q

T

− 3.6 −

− 9.7 −

− 12 −

− 1.7 −

− 2.2 − nC

SOURCE−DRAIN DIODE CHARACTERISTICS

Continuous Current

Pulsed Current I

Forward Voltage (Note 2) VGS = 0 V, IS = −130 mA V

I

SM

SD

S

− − −0.130

− − −0.520

− − −2.2 V

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

mAdc

W

pF

ns

A

0.6
VDS = 10 V

0.5

0.4

0.3

0.2

, DRAIN CURRENT (AMPS)

D

0.1

−I

0

1 1.5 2 2.5 3

, GATE-TO-SOURCE VOLTAGE (VOLTS)

-V

GS

Figure 1. Transfer Characteristics

TYPICAL ELECTRICAL CHARACTERISTICS

0.5

TJ = 25°C

0.45

0.4

0.35

0.3

0.25

0.2

0.15

, DRAIN CURRENT (AMPS)

0.1

D

−I

0.05

0

024 10

13 957

-V

DS

Figure 2. On−Region Characteristics

2

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

-55°C

25°C

150°C

3.5

4

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VGS = -3.5 V

-3.25 V

-3.0 V

-2.75 V

-2.5 V

-2.25 V

6

8