ON BSS138LT1 Schematic [ru]

BSS138LT1

Preferred Device

Power MOSFET
200 mA, 50 V

N−Channel SOT−23

Typical applications are DC−DC converters, power management in
portable and battery−powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.

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Features

• Pb−Free Packages are Available

• Low Threshold Voltage (V

Low Voltage Applications

: 0.5 V−1.5 V) Makes it Ideal for

GS(th)

• Miniature SOT−23 Surface Mount Package Saves Board Space

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Drain−to−Source Voltage V
Gate−to−Source Voltage − Continuous V
Drain Current

− Continuous @ T

− Pulsed Drain Current (t
Total Power Dissipation @ TA = 25°C P
Operating and Storage Temperature

Range
Thermal Resistance − Junction−to−Ambient R
Maximum Lead Temperature for Soldering

Purposes, for 10 seconds

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.

= 25°C unless otherwise noted)

A

= 25°C

A

≤ 10 s)

p

DSS

I

I

DM

TJ, T

T

GS

D



50 Vdc

± 20 Vdc

200
800

stg

225 mW

− 55 to
150

556 °C/W
260 °C

D

JA
L

mA

°C

200 mA, 50 V

N−Channel

3

= 3.5 

3

2

SOT−23
CASE 318
STYLE 21

Gate

3

Drain

J1M

21

Source

R

DS(on)

1

1

2

MARKING DIAGRAM & PIN ASSIGNMENT

J1 = Device Code
M = Date Code

 Semiconductor Components Industries, LLC, 2004

June, 2004 − Rev. 3

ORDERING INFORMATION

Device Package Shipping

BSS138L T1 SOT−23 3000 Tape & Reel
BSS138LT1G SOT−23

(Pb−Free)

BSS138L T3 SOT−23 10,000 Tape & Reel
BSS138LT3G SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

Preferred devices are recommended choices for future use
and best overall value.

1 Publication Order Number:

3000 Tape & Reel

10,000 Tape & Reel

BSS138LT1/D

†

BSS138LT1

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

= 0 Vdc, ID = 250 Adc)

(V

GS

Zero Gate Voltage Drain Current

(V

= 25 Vdc, VGS = 0 Vdc)

DS

= 50 Vdc, VGS = 0 Vdc)

(V

DS

Gate−Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS (Note 1)

Gate−Source Threshold Voltage

(V

= VGS, ID = 1.0 mAdc)

DS

Static Drain−to−Source On−Resistance

(V

= 2.75 Vdc, ID < 200 mAdc, TA = −40°C to +85°C)

GS

(V

= 5.0 Vdc, ID = 200 mAdc)

GS

Forward Transconductance

(V

= 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)

DS

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1 MHz) C
Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) C
Transfer Capacitance (VDG = 25 Vdc, VGS = 0, f = 1 MHz) C

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time
Turn−Off Delay Time

(VDD = 30 Vdc, ID = 0.2 Adc,)

1. Pulse Test: Pulse Width ≤300 s, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

V

(BR)DSS

I

DSS

GSS

V

GS(th)

r

DS(on)

g

t

d(on)

t

d(off)

fs

iss

oss

rss

50 − − Vdc

Adc

−

−

−

−

0.1

0.5

− − ±0.1 Adc

0.5 − 1.5 Vdc

Ohms

−

−

5.6

−

3.5

10

100 − − mmhos

− 40 50 pF

− 12 25

− 3.5 5.0

− − 20

ns

− − 20

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2

BSS138LT1

TYPICAL ELECTRICAL CHARACTERISTICS

0.8
T

= 25°C

J

0.7

0.6

0.5

0.4

0.3

, DRAIN CURRENT (AMPS)

0.2

D

I

0.1

0

024 10

13 957

V

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS

VGS = 3.5 V

VGS = 3.25 V

VGS = 3.0 V

VGS = 2.75 V

VGS = 2.5 V

6

8

Figure 1. On−Region Characteristics

2.2

2

1.8

1.6

1.4

1.2

(NORMALIZED)

VGS = 10 V
I

= 0.8 A

D

VGS = 4.5 V
I

D

= 0.5 A

, VARIANCE (VOLTS)

0.9

0.8

0.7

0.6

0.5

0.4

0.3

, DRAIN CURRENT (AMPS)

D

0.2

I

0.1

0

1.25

1.125

1

VDS = 10 V

−55°C

1 1.5 2 2.5 3

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

ID = 1.0 mA

25°C

3.5

150°C

4

4.50.50

1

, DRAIN−TO−SOURCE RESISTANCE

0.8

DS(on)

R

0.6

−55 −5 45 95

T

, JUNCTION TEMPERATURE (°C)

J

Figure 3. On−Resistance Variation with

Temperature

10

, GATE−TO−SOURCE VOLTAGE (VOLTS)

GS

V

8

6

4

2

0

0

VDS = 40 V
T

= 25°C

J

500

0.875

gs(th)

V

145

1000

Q

, TOTAL GATE CHARGE (pC)

T

0.75

ID = 200 mA

1500

−55 −5 45 95 145

2000

Figure 5. Gate Charge

−30 20 70 120

T

, JUNCTION TEMPERATURE (°C)

J

Figure 4. Threshold Voltage Variation

with Temperature

2500 3000

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