ON BAV99LT1G, SBAV99LT1G Schematic [ru]

BAV99L, SBAV99L

s

l

l

Dual Series
Switching Diode

Features

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*

MAXIMUM RATINGS (Each Diode)

Rating

Reverse Voltage V
Forward Current I
Peak Forward Surge Current I
Repetitive Peak Reverse Voltage V
Average Rectified Forward Current (Note 1)

(averaged over any 20 ms period)
Repetitive Peak Forward Current I
Non−Repetitive Peak Forward Current

t = 1.0 ms
t = 1.0 ms
t = 1.0 s

Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation
FR−5 Board (Note 1) TA = 25°C
Derate above 25°C

Thermal Resistance, Junction−to−Ambient
Total Device Dissipation

Alumina Substrate (Note 2)
T

= 25°C

A

Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage

Temperature Range

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in 99.5% alumina.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

Symbol Value Unit

stg

100 Vdc
215 mAdc
500 mAdc
100 V
715 mA

450 mA

2.0

1.0

0.5

225

1.8mWmW/°C

556 °C/W
300

2.4mWmW/°C

417 °C/W

−65 to
+150

A

°C

R

F

FM(surge)

RRM

I

F(AV)

FRM

I

FSM

P

D

R

q

JA

P

D

R

q

JA

TJ, T

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CASE 318

SOT−23

STYLE 11

ANODE

1

3

CATHODE/ANODE

CATHODE

2

MARKING DIAGRAM

A7 MG

G

1

A7 = Device Code
M = Date Code*
G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

ORDERING INFORMATION

Device Package Shipping

BAV99LT1G SOT−23

(Pb−Free)

SBAV99LT1G SOT−23

(Pb−Free)

BAV99LT3G SOT−23

(Pb−Free)

SBAV99LT3G SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.

3,000 / Tape & Reel

3,000 / Tape & Reel

10,000 / Tape & Ree

10,000 / Tape & Ree

†

© Semiconductor Components Industries, LLC, 2015

December, 2015 − Rev. 11

1 Publication Order Number:

BAV99LT1/D

BAV99L, SBAV99L

OFF CHARACTERISTICS (T

= 25°C unless otherwise noted) (Each Diode)

A

Characteristic

Reverse Breakdown Voltage,

= 100 mA)

(I

(BR)

Reverse Voltage Leakage Current,

(V

= 100 Vdc)

R

= 25 Vdc, TJ = 150°C)

(V

R

(VR = 70 Vdc, TJ = 150°C)

Diode Capacitance,

(V

= 0, f = 1.0 MHz)

R

Forward Voltage,

(I

= 1.0 mAdc)

F

(IF = 10 mAdc)

= 50 mAdc)

(I

F

(I

= 150 mAdc)

F

Reverse Recovery Time,

= IR = 10 mAdc, i

(I

F

= 1.0 mAdc) RL = 100 W

R(REC)

Forward Recovery Voltage,

(I

= 10 mA, t

F

= 20 ns)

r

CURVES APPLICABLE TO EACH DIODE

1000

100

TA = 125°C

10

TA = 85°C

TA = 55°C

TA = 25°C

1

, FORWARD CURRENT (mA)

F

I

0.1
0 1.1 1.2

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

TA = 150°C

TA = −55°C

VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)

Figure 1. Forward Voltage Figure 2. Leakage Current

TA = −40°C

Symbol Min Max Unit

V

V

(BR)

I

R

C

V

t

rr

FR

D

F

100 −

−

−

−

− 1.5

−

−

−

−

715

855
1000
1250

− 6.0

− 1.75

1.0
30
50

100

10

TA = 150°C

TA = 125°C

1.0

0.1

0.01

, REVERSE CURRENT (mA)

R

I

TA = 85°C

TA = 55°C

TA = 25°C

0.001
0 10203040506070

Vdc

mAdc

pF

mVdc

ns

V

0.61

0.59

0.57

0.55

0.53

0.51

0.49

, DIODE CAPACITANCE (pF)

d

0.47

C

0.45
012345678

, REVERSE VOLTAGE (V)

V

R

Figure 3. Capacitance

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