ON BAT54T1G Schematic [ru]

BAT54T1G

Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.

Features

• Extremely Fast Switching Speed

• Low Forward Voltage − 0.35 Volts (Typ) @ I

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

= 10 mAdc

F

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30 VOLT

SCHOTTKY BARRIER

DETECTOR AND SWITCHING

DIODES

MAXIMUM RATINGS (T

Rating

Reverse Voltage V

Forward Power Dissipation, FR−5 Board
(Note 1)

Thermal Resistance,

Thermal Resistance,

Forward Current (DC) I

Non−Repetitive Peak Forward Current

Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66%

Junction Temperature T

Storage Temperature Range T

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. FR-5 = 1.0 x 0.75 x 0.062 in.

@ TA = 25°C
Derate above 25°C

Junction−to−Case

Junction−to−Ambient

t

< 10 msec

p

= 125°C unless otherwise noted)

J

Symbol Value Unit

R

P

F

R



JL

R



JA

200 Max mA

−55 to 125 °C

J

−55 to +150 °C

I

FSM

I

FRM

F

stg

30 V

400

3.2

174 °C/W

492 °C/W

600 mA

300 mA

mW

mW/°C

1

CATHODE

2

1

2

ANODE

SOD−123

CASE 425

STYLE 1

MARKING DIAGRAM

1

SB = Device Code
M = Date Code
G = Pb−Free Package

(Note: Microdot may be in either location)

SBM G

G

ORDERING INFORMATION

Device Package Shipping

BAT54T1G SOD−123

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

3000 / Tape & Reel

†

© Semiconductor Components Industries, LLC, 2010

August, 2010 − Rev. 9

1

Publication Order Number:

BAT54T1/D

BAT54T1G

+

ELECTRICAL CHARACTERISTICS (T

Characteristic

Reverse Breakdown Voltage

(I

= 10 A)

R

Total Capacitance

(V

= 1.0 V, f = 1.0 MHz)

R

Reverse Leakage

(V

= 25 V)

R

Forward Voltage

(I

= 0.1 mAdc)

F

Forward Voltage

(I

= 30 mAdc)

F

Forward Voltage

(I

= 100 mAdc)

F

Reverse Recovery Time

(I

= IR = 10 mAdc, I

F

Forward Voltage

(I

= 1.0 mAdc)

F

Forward Voltage

(I

= 10 mAdc)

F

= 1.0 mAdc, Figure 1)

R(REC)

= 25°C unless otherwise noted)

A

Symbol Min Typ Max Unit

V

(BR)R

C

T

I

R

V

F

V

F

V

F

t

rr

V

F

V

F

30 − − V

− 7.6 10 pF

− 0.5 2.0

Adc

− 0.22 0.24 Vdc

− 0.41 0.5 Vdc

− 0.52 0.8 Vdc

− − 5.0 ns

− 0.29 0.32 Vdc

− 0.35 0.40 Vdc

820 

10 V

2 k

100 H

0.1 F

I

0.1 F

F

t

t

r

p

t

10%

I

F

t

rr

t

DUT

50  Output

Pulse

Generator

50  Input

Sampling

Oscilloscope

V

R

90%

INPUT SIGNAL

= 1 mA

i

I

R

R(REC)

OUTPUT PULSE

(I

= IR = 10 mA; measured

F

at i

R(REC)

= 1 mA)

Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so I
Notes: 3. t

» t

p

rr

is equal to 10 mA.

R(peak)

Figure 1. Recovery Time Equivalent Test Circuit

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2