ON BAT54HT1G, NSVBAT54HT1G Schematic [ru]
BAT54HT1G,
NSVBAT54HT1G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 V (Typ) @ I
Device Marking: JV
AEC Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
= 10 mAdc
F
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30 VOLT SILICON
HOT−CARRIER DETECTOR
AND SWITCHING DIODES
SOD−323
CASE 477
STYLE 1
MAXIMUM RATINGS (T
Reverse Voltage V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
= 125C unless otherwise noted)
J
Rating
Symbol Value Unit
R
30 V
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1)
T
= 25C
A
Derate above 25C
Forward Current (DC) I
Non−Repetitive Peak Forward Current,
t
< 10 msec
p
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66%
Thermal Resistance
Junction−to−Ambient
Junction and Storage Temperature Range TJ, T
1. FR−4 Minimum Pad
P
I
FSM
I
FRM
R
D
200
1.57mWmW/C
F
q
200
Max
600
300
JA
635
−55
stg
to150
mA
mA
mA
C/W
C
1
CATHODE
2
ANODE
MARKING DIAGRAM
JVM G
G
1
JV = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
2
ORDERING INFORMATION
Device Package Shipping
BAT54HT1G SOD−323
NSVBAT54HT1G SOD−323
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(Pb−Free)
(Pb−Free)
Tape & Reel
Tape & Reel
†
3,000 /
3,000 /
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 6
1 Publication Order Number:
BAT54HT1/D
BAT54HT1G, NSVBAT54HT1G
ELECTRICAL CHARACTERISTICS (T
Characteristic
Reverse Breakdown Voltage
(IR = 10 A)
Total Capacitance
(V
= 1.0 V, f = 1.0 MHz)
R
Reverse Leakage
(V
= 25 V)
R
Forward Voltage
(I
= 0.1 mAdc)
F
Forward Voltage
(I
= 30 mAdc)
F
Forward Voltage
(IF = 100 mAdc)
Reverse Recovery Time
(I
= IR = 10 mAdc, I
F
Forward Voltage
(I
= 1.0 mAdc)
F
Forward Voltage
(I
= 10 mAdc)
F
= 1.0 mAdc) Figure 1
R(REC)
= 25C unless otherwise noted)
A
Symbol Min Typ Max Unit
V
(BR)R
C
T
I
R
V
F
V
F
V
F
t
rr
V
F
V
F
30 − −
− 7.6 10
− 0.5 2.0
− 0.22 0.24
− 0.41 0.5
− 0.52 0.8
− − 5.0
− 0.29 0.32
− 0.35 0.40
V
pF
Adc
Vdc
Vdc
Vdc
ns
Vdc
Vdc
+10 V
50 Output
Generator
820
Pulse
2 k
0.1 F
100 H
I
0.1 F
F
t
t
r
p
t
I
F
10%
DUT
50 Input
Sampling
Oscilloscope
V
R
90%
INPUT SIGNAL
I
R
(I
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. t
» t
p
rr
is equal to 10 mA.
R(peak)
Figure 1. Recovery Time Equivalent Test Circuit
t
rr
= 1 mA
i
R(REC)
OUTPUT PULSE
= IR = 10 mA; measured
F
at i
R(REC)
= 1 mA)
t
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2
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