ON BAS19LT1, BAS20LT1, BAS21LT1 Schematic [ru]
BAS19LT1, BAS20LT1,
BAS21LT1
Preferred Devices
High Voltage
Switching Diode
• Device Marking: BAS19LT1 = JP
Device Marking: BAS20LT1 = JR
Device Marking: BAS21LT1 = JS
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HIGH VOLTAGE
SWITCHING DIODE
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage
Continuous Forward Current I
Peak Forward Surge Current I
BAS19
BAS20
BAS21
FM(surge)
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(Note 1)
= 25°C
T
A
Derate above 25°C
Thermal Resistance Junction to Ambient R
Total Device Dissipation Alumina Substrate
(Note 2)
T
= 25°C
A
Derate above 25°C
Thermal Resistance Junction to Ambient R
Junction and Storage
Temperature Range
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
TJ, T
3
CATHODE
V
R
120
200
250
D
200 mAdc
625 mAdc
225
F
P
Vdc
1
SOT–23
CASE 318
STYLE 8
1
ANODE
3
2
MARKING DIAGRAM
1.8mWmW/°C
JA
D
JA
stg
556 °C/W
300
2.4mWmW/°C
417 °C/W
–55 to
+150
Jx M
Jx = Specific Device Code
x = P, R or S
M = Date Code
°C
P
ORDERING INFORMATION
Device Package Shipping
Semiconductor Components Industries, LLC, 2002
March, 2002 – Rev . 2
BAS19LT1 SOT–23 3000/Tape & Reel
BAS20LT1 SOT–23 3000/Tape & Reel
BAS21LT1 SOT–23 3000/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
BAS19LT1/D
BAS19LT1, BAS20LT1, BAS21LT1
0
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
Reverse Voltage Leakage Current
(V
= 100 Vdc) BAS19LT1
R
= 150 Vdc) BAS20LT1
(V
R
(V
= 200 Vdc) BAS21LT1
R
(V
= 100 Vdc, TJ = 150°C) BAS19LT1
R
(V
= 150 Vdc, TJ = 150°C) BAS20LT1
R
(V
= 200 Vdc, TJ = 150°C) BAS21LT1
R
Reverse Breakdown Voltage
(I
= 100 µAdc) BAS19LT1
BR
= 100 µAdc) BAS20LT1
(I
BR
(I
= 100 µAdc) BAS21LT1
BR
Forward Voltage
= 100 mAdc)
(I
F
(I
= 200 mAdc)
F
Diode Capacitance (VR = 0, f = 1.0 MHz) C
Reverse Recovery Time (IF = IR = 30 mAdc, I
= 3.0 mAdc, RL = 100) t
R(REC)
820 Ω
+10 V
2.0 k
100 µH
I
0.1 µF
F
t
r
10%
0.1 µF
I
R
V
(BR)
V
F
D
rr
t
p
t
–
–
–
–
–
–
120
200
250
–
–
0.1
0.1
0.1
100
100
100
–
–
–
1.0
1.25
– 5.0 pF
– 50 ns
I
F
t
rr
µAdc
Vdc
Vdc
t
D.U.T.
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. t
» t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
1200
TA = –55°C
1000
800
155°C
600
400
FORWARD VOLTAGE (mV)
200
1
1 10 100 1000
FORWARD CURRENT (mA)
Figure 2. Forward Voltage Figure 3. Reverse Leakage
25°C
90%
V
R
INPUT SIGNAL
is equal to 30 mA.
R(peak)
7000
6000
5000
4000
3000
6
5
4
3
REVERSE CURRENT (nA)
2
1
0
21
I
= 3.0 mA
I
R
R(REC)
OUTPUT PULSE
(I
= IR = 30 mA; MEASURED
F
at I
R(REC)
= 3.0 mA)
TA = 155°C
TA = 25°C
TA = –55°C
5 10 20 50 100 200
REVERSE VOLTAGE (V)
30
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