BAS19LT1, BAS20LT1,
BAS21LT1
Preferred Devices
High Voltage
Switching Diode
• Device Marking: BAS19LT1 = JP
Device Marking: BAS20LT1 = JR
Device Marking: BAS21LT1 = JS
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HIGH VOLTAGE
SWITCHING DIODE
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage
Continuous Forward Current I
Peak Forward Surge Current I
BAS19
BAS20
BAS21
FM(surge)
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(Note 1)
= 25°C
T
A
Derate above 25°C
Thermal Resistance Junction to Ambient R
Total Device Dissipation Alumina Substrate
(Note 2)
T
= 25°C
A
Derate above 25°C
Thermal Resistance Junction to Ambient R
Junction and Storage
Temperature Range
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
TJ, T
3
CATHODE
V
R
120
200
250
D
200 mAdc
625 mAdc
225
F
P
Vdc
1
SOT–23
CASE 318
STYLE 8
1
ANODE
3
2
MARKING DIAGRAM
1.8mWmW/°C
JA
D
JA
stg
556 °C/W
300
2.4mWmW/°C
417 °C/W
–55 to
+150
Jx M
Jx = Specific Device Code
x = P, R or S
M = Date Code
°C
P
ORDERING INFORMATION
Device Package Shipping
Semiconductor Components Industries, LLC, 2002
March, 2002 – Rev . 2
BAS19LT1 SOT–23 3000/Tape & Reel
BAS20LT1 SOT–23 3000/Tape & Reel
BAS21LT1 SOT–23 3000/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
BAS19LT1/D
BAS19LT1, BAS20LT1, BAS21LT1
0
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
Reverse Voltage Leakage Current
(V
= 100 Vdc) BAS19LT1
R
= 150 Vdc) BAS20LT1
(V
R
(V
= 200 Vdc) BAS21LT1
R
(V
= 100 Vdc, TJ = 150°C) BAS19LT1
R
(V
= 150 Vdc, TJ = 150°C) BAS20LT1
R
(V
= 200 Vdc, TJ = 150°C) BAS21LT1
R
Reverse Breakdown Voltage
(I
= 100 µAdc) BAS19LT1
BR
= 100 µAdc) BAS20LT1
(I
BR
(I
= 100 µAdc) BAS21LT1
BR
Forward Voltage
= 100 mAdc)
(I
F
(I
= 200 mAdc)
F
Diode Capacitance (VR = 0, f = 1.0 MHz) C
Reverse Recovery Time (IF = IR = 30 mAdc, I
= 3.0 mAdc, RL = 100) t
R(REC)
820 Ω
+10 V
2.0 k
100 µH
I
0.1 µF
F
t
r
10%
0.1 µF
I
R
V
(BR)
V
F
D
rr
t
p
t
–
–
–
–
–
–
120
200
250
–
–
0.1
0.1
0.1
100
100
100
–
–
–
1.0
1.25
– 5.0 pF
– 50 ns
I
F
t
rr
µAdc
Vdc
Vdc
t
D.U.T.
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. t
» t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
1200
TA = –55°C
1000
800
155°C
600
400
FORWARD VOLTAGE (mV)
200
1
1 10 100 1000
FORWARD CURRENT (mA)
Figure 2. Forward Voltage Figure 3. Reverse Leakage
25°C
90%
V
R
INPUT SIGNAL
is equal to 30 mA.
R(peak)
7000
6000
5000
4000
3000
6
5
4
3
REVERSE CURRENT (nA)
2
1
0
21
I
= 3.0 mA
I
R
R(REC)
OUTPUT PULSE
(I
= IR = 30 mA; MEASURED
F
at I
R(REC)
= 3.0 mA)
TA = 155°C
TA = 25°C
TA = –55°C
5 10 20 50 100 200
REVERSE VOLTAGE (V)
30
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2
BAS19LT1, BAS20LT1, BAS21LT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
0.037
0.95
0.035
0.9
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by T
temperature of the die, R
, the maximum rated junction
J(max)
, the thermal resistance from the
JA
θ
device junction to ambient, and the operating temperature,
TA. Using the values provided on the data sheet for the
SOT–23 package, PD can be calculated as follows:
PD =
J(max)
R
A
θ
JA
T
– T
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.079
2.0
0.031
0.8
inches
mm
SOT–23
one can calculate the power dissipation of the device which
in this case is 225 milliwatts.
150°C – 25°C
PD =
556°C/W
= 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 225
milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT–23 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
. Using a
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
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• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
3
BAS19LT1, BAS20LT1, BAS21LT1
PACKAGE DIMENSIONS
SOT–23 (TO–236)
CASE 318–09
ISSUE AH
A
L
3
1
V
G
D
BS
2
C
H
J
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318-01, -02, AND -06 OBSOLETE, NEW
STANDARD 318-09.
INCHES
DIMAMIN MAX MIN MAX
0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0385 0.0498 0.99 1.26
D 0.0140 0.0200 0.36 0.50
G 0.0670 0.0826 1.70 2.10
H 0.0040 0.0098 0.10 0.25
J 0.0034 0.0070 0.085 0.177
K 0.0180 0.0236 0.45 0.60
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.0984 2.10 2.50
V 0.0177 0.0236 0.45 0.60
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
MILLIMETERS
Thermal Clad is a registered trademark of the Bergquist Company.
ON Semiconductor is a trademark and is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right
to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any
and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must
be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
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JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
BAS19LT1/D
4
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