ON 2SC4617 Schematic [ru]
2SC4617
NPN Silicon General
Purpose Amplifier
Transistor
This NPN transistor is designed for general purpose amplifier
applications. This device is housed in the SC−75/SOT-416 package
which is designed for low power surface mount applications, where
board space is at a premium.
Features
• Pb−Free Package is Available*
• Reduces Board Space
• High h
• Low V
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel
, 210−460 (typical)
FE
, < 0.5 V
CE(sat)
http://onsemi.com
NPN GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
COLLECTOR
3
1
BASE
3
2
1
MARKING DIAGRAM
1
B9 = Specific Device Code
M = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
2
EMITTER
SC−75
CASE 463
STYLE 1
B9 M
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 4
1 Publication Order Number:
2SC4617/D
2SC4617
MAXIMUM RATINGS (T
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current − Continuous I
= 25°C)
J
Rating
Symbol Value Unit
(BR)CBO
(BR)CEO
(BR)EBO
C
50 Vdc
50 Vdc
5.0 Vdc
100 mAdc
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously . If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Power Dissipation (Note 1) P
Junction Temperature T
Storage Temperature Range T
D
J
stg
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
ELECTRICAL CHARACTERISTICS (T
Characteristic
Collector-Base Breakdown Voltage (IC = 50 Adc, IE = 0) V
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V
Emitter-Base Breakdown Voltage (IE = 50 Adc, IE = 0) V
Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) I
Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0) I
Collector-Emitter Saturation Voltage (Note 2)
(I
= 60 mAdc, IB = 5.0 mAdc)
C
DC Current Gain (Note 2)
(V
= 6.0 Vdc, IC = 1.0 mAdc)
CE
Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz) f
Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz) C
= 25°C)
A
Symbol Min Typ Max Unit
(BR)CBO
(BR)CEO
(BR)EBO
CBO
EBO
V
CE(sat)
h
FE
T
OB
2. Pulse Test: Pulse Width ≤300 s, D.C. ≤ 2%.
125 mW
150 °C
−55 ~ +150 °C
50 − − Vdc
50 − − Vdc
5.0 − − Vdc
− − 0.5 A
− − 0.5 A
Vdc
− − 0.4
−
120 − 560
− 180 − MHz
− 2.0 − pF
ORDERING INFORMATION
Device Package Shipping
2SC4617 SC−75 3,000 / Tape & Reel
2SC4617G SC−75
3,000 / Tape & Reel
(Pb−Free)
2SC4617T1 SC−75 3,000 / Tape & Reel
2SC4617T1G SC−75
3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
†
http://onsemi.com
2
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