ON 2N7002E Schematic [ru]

2N7002E

Small Signal MOSFET

60 V, 310 mA, Single, N−Channel, SOT−23

Features

• Low R

• Small Footprint Surface Mount Package

• Trench Technology

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Applications

• Low Side Load Switch

• Level Shift Circuits

• DC−DC Converter

• Portable Applications i.e. DSC, PDA, Cell Phone, etc.

DS(on)

Compliant

(BR)DSS

60 V

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MAX

DS(on)

3.0 W @ 4.5 V

2.5 W @ 10 V

Simplified Schematic

N−Channel

ID MAX

(Note 1)

310 mA

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Drain Current (Note 1)

Steady State TA = 25°C

t < 5 s TA = 25°C

Power Dissipation (Note 1)

Steady State t < 5 s

Pulsed Drain Current (tp = 10 ms)

Operating Junction and Storage Temperature Range

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

= 25°C unless otherwise stated)

DSS

TA = 85°C

TJ, T

STG

60 V

±20 V

260 190

310 220

300 420

1.2 A

−55 to +150

300 mA

260 °C

°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Junction−to−Ambient − Steady State (Note 1)

Junction−to−Ambient − t ≤ 5 s (Note 1)

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

417

300

°C/W

(Top View)

MARKING DIAGRAM

& PIN ASSIGNMENT

SOT−23 CASE 318 STYLE 21

703 = Device Code M = Date Code G = Pb−Free Package

(Note: Microdot may be in either location)

Gate

Drain

703 MG

Source

ORDERING INFORMATION

Device Package Shipping

2N7002ET1G 3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

SOT−23

(Pb−Free)

†

February, 2011 − Rev. 3

1 Publication Order Number:

2N7002E/D

2N7002E

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V

Drain−to−Source Breakdown Voltage Temperature Coefficient

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

(BR)DSS

DSS

VGS = 0 V, ID = 250 mA

VGS = 0 V,

VDS = 60 V

Gate−to−Source Leakage Current I

GSS

VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage V

Negative Threshold Temperature

Coefficient

Drain−to−Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V, ID = 240 mA 0.86 2.5 W

VGS = 4.5 V, ID = 50 mA 1.1 3.0

Forward Transconductance g

VDS = 5 V, ID = 200 mA 530 mS

CHARGES AND CAPACITANCES

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

VGS = 0 V, f = 1 MHz,

VDS = 25 V

VGS = 5 V, VDS = 10 V;

ID = 240 mA

SWITCHING CHARACTERISTICS, VGS = V (Note 3)

Turn−On Delay Time t

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(ON)

d(OFF)

VGS = 10 V, VDD = 30 V, ID = 200 mA, RG = 10 W

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

VGS = 0 V,

IS = 200 mA

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%

3. Switching characteristics are independent of operating junction temperatures

60 V

75 mV/°C

TJ = 25°C 1 mA

TJ = 125°C 500

1.0 2.5 V

4.4 mV/°C

26.7 40

4.6

2.9

0.81

0.31

0.48

0.08

1.7

1.2

4.8

3.6

TJ = 25°C 0.79 1.2

TJ = 85°C 0.7

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