Photomicrosensor (Transmissive)
Internal Circuit
Four, 0.2
Two, C0.7
Optical
axis
Gate
Four, 0.5
Two, R1
Two, C0.2
1
0
−0.1
dia
1.4
0
−0.1
dia
5.4
5 min.
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Unless otherwise specified,
the tolerances are ±0.2 mm.
EE-SX1106
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
■ Features
• Ultra-compact with a slot width of 3 mm.
• PCB mounting type.
• High resolution with a 0.4-mm-wide aperture.
• RoHS Compliant.
■ Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rated value
Emitter Forward current I
Pulse forward current I
Reverse voltage V
Detector Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current I
Collector dissipation P
Ambient
temperature
Operating T
Storage T
Soldering temperature T
F
FP
V
V
C
50 mA (see note 1)
---
5 V
R
30 V
CEO
4.5 V
ECO
30 mA
80 mW (see note 1)
C
–25°C to 85°C
opr
–30°C to 85°C
stg
260°C (see note 2)
sol
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Complete soldering within 3 seconds.
■ Ordering Information
Description Model
Photomicrosensor (transmissive) EE-SX1106
■ Electrical and Optical Characteristics (Ta = 25°C)
Item Symbol Value Condition
Emitter Forward voltage V
Reverse current I
Peak emission wavelength λ
Detector Light current I
Dark current I
Leakage current I
Collector–Emitter saturated voltage V
Peak spectral sensitivity wavelength λ
Rising time tr 10 μs typ. V
Falling time tf 10 μs typ. V
F
R
P
L
D
LEAK
CE
P
(sat)
1.3 V typ., 1.6 V max. IF = 50 mA
10 μA max. VR = 5 V
950 nm typ. IF = 50 mA
0.2 mA min. IF = 20 mA, VCE = 5 V
500 nA max. VCE = 10 V, 0 lx
--- ---
0.4 V max. IF = 20 mA, IL = 0.1 mA
800 nm typ. VCE = 5 V
= 5 V, RL = 100 Ω, IF = 20 mA
CC
= 5 V, RL = 100 Ω, IF = 20 mA
CC
Photomicrosensor (Transmissive) EE-SX1106 129
■ Engineering Data
RL = 1K Ω
RL = 500 Ω
RL = 100 Ω
Forward Current vs. Collector
Dissipation Temperature Rating
Forward Current vs. Forward
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
Response Time Measurement Circuit
Input
Output
Input
Output
90 %
10 %
Response Time vs. Light Current
Characteristics (Typical)
Sensing Position Characteristics
(Typical)
VCE = 30 V
VCE =20 V
VCE = 10 V
Ambient temperature Ta (°C)
Collector dissipation P
C
(mW)
Forward voltage VF (V)
Forward current I
F
(mA)
Forward current I
F
(mA)
Forward current IF (mA)
Light current I
L
(mA)
Collector−Emitter voltage VCE (V)
Light current I
L
(mA)
Ambient temperature Ta (°C)
Light current I
t
(mA)
Ta = 25°C
V
CE
= 5 V
I
F
= 20 mA
I
F
= 15 mA
I
F
= 10 mA
I
F
= 5 mA
Ta = 25°C
I
F
= 20 mA
V
CE
= 5 V
I
F
= 20 mA
V
CE
= 5 V
Ta = 25
°
C
VCE = 5 V
Ta = 25°C
Response time tr, tf (μs)
Relative light current I
L
(%)
Dark current I
D
(nA)
Relative light current I
L
(%)
Ambient temperature Ta (°C)
Distance d (mm)
I
F
= 20 mA
V
CE
= 5 V
Ta = 25
°
C
Relative light current I
L
(%)
Distance d (mm)
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
I
F
= 25 mA
130 Photomicrosensor (Transmissive) EE-SX1106
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