Photomicrosensor (Transmissive)
Be sure to read Safety Precautions on page 3.
4
5.1
4
2 mm (slot width)
Input
Input
I
L
V
Output
cc
R
L
t
0
tf
tr
90%
10%
t
Output
0
EE-SX1321
Ultra-Compact Slot / SMD Type
(Slot width: 2 mm)
• PCB surface mounting type.
• High resolution with a 0.3-mm-wide aperture.
• Dual-channel output.
Ordering Information
Photomicrosensor
Appearance
Sensing
method
Connecting
method
Sensing distance
Aperture size (H × W)
(mm)
Output type Model
Emitter
× 1.4
Transmissive
(slot type)
SMT
1.4
Detector
× 0.3 2ch
1
Ratings, Characteristics and Exterior Specifications
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rated value Unit
Emitter
Forward current IF 25 *1 mA
Pulse forward current IFP 100 *2 mA
Reverse voltage VR 5V
Detector
Collector-Emitter
voltage
Emitter-Collector
voltage
Collector current
Collector dissipation
Operating temperature
Storage temperature
Reflow soldering
temperature
CEO 12 V
V
V
ECO 5V
C 20 mA
I
C 75 *1 mW
P
opr
-30
to +
-40
to +
85 *1 °C
90 *1 °C
T
stg
T
sol 255 *3 °C
T
*1. Refer to the temperature rating chart if the ambient temperature
exceeds 25°C.
*2. Duty ratio: 1%, Pulse width: 0.1 ms
*3. Complete soldering within 10 seconds for reflow soldering.
Exterior Specifications
Connecting method Weight (g)
SMT 0.1 PPS
Material
Case
Electrical and Optical Characteristics
Item Symbol
Emitter
Forward voltage VF --- 1.1 1.3 V IF = 5 mA
Reverse current
Peak emission
wavelength
Detector
Light current
Dark current ID --- 10 100 nA
Collector-Emitter
saturated voltage
Peak spectral
sensitivity
wavelength
Rising time tr --- 19 --- s
Falling time tf --- 26 --- s
Note: Refer to the following timing diagram for tr and tf.
Phototransistor
(Dual-channel
EE-SX1321
output)
(Ta = 25°C)
Value
MIN. TYP.
R --- --- 10 AVR = 5 V
I
P --- 940 --- nm IF = 20 mA
L1 150 --- 1500 A
I
L2 150 --- 1500 A
I
V
CE
(sat)
--- 0.1 0.4 V
P --- 900 --- nm VCE = 5 V
MAX.
Unit Condition
F = 5 mA,
I
CE = 5 V
V
V
CE = 10 V,
0 lx
I
F = 20 mA,
L = 50 A
I
V
CC = 5 V,
L = 100 ,
R
I
L = 500 A
V
CC = 5 V,
L = 100 ,
R
I
L = 500 A
1
Engineering Data (Reference value)
60
50
40
30
20
10
0
120
100
80
60
40
20
0
-40 -20 0 20 40 60 80 100
P
C
I
F
Ambient temperature Ta (ºC)
Forward current I
F
(mA)
Collector dissipation P
C
(mW)
02468101214
2,500
2,000
1,500
1,000
500
0
Ta = 25ºC
I
F
=
10 mA
I
F
=
5 mA
Collector-Emitter voltage VCE (V)
Light current I
L
(µA)
120
110
100
90
80
70
60
−40 −20 0 20 40 60 80 100
Ambient temperature Ta (°C)
I
F
=
5 mA
V
CE
=
5 V
Relative light current I
L
(%)
1,000
100
10
1
0.1
−30 −20 −10
0
10 20 30 40 50 60 708090
V
CE
= 2 V
0 l x
V
CE
= 10 V
Ambient temperature Ta (ºC)
Dark current I
D
(nA)
10,000
1,000
100
10
1
0.1 100101
tr
tf
Load resistance R
L (kΩ)
Response time tr, tf (μs)
VCC = 5 V
I
L =0.5 mA
Ta = 25°C
−0.8 −0.6 −0.4 −0.2 0 0.2 0.4 0.80.6
d
IF = 5 mA
V
CE = 5 V
(Center of
optical axis)
Ta = 25ºC
100
80
60
40
20
0
120
Distance d (mm)
Relative light current IL (%)
100
80
60
40
20
0
-1.2 -0.9 -0.6 -0.3 0 0.3 0.6 0.9 1.2
120
Relative light current I
L
(%)
Distance d (mm)
d
IF = 5 mA
Ta = 25ºC
V
CE
= 5 V
(Center of
optical axis)
EE-SX1321
Fig 1. Forward Current vs. Collector
Dissipation Temperature Rating
Fig 4. Light Current vs. CollectorEmitter Voltage Characteristics (Typical)
Fig 2. Forward Current vs. Forward
Voltage Characteristics (Typical)
60
50
40
30
20
Forward current IF (mA)
10
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Forward voltage V
Ta = 25°C
F (V)
Fig 5. Relative Light Current vs. Ambient
Temperature Characteristics (Typical)
Fig 3. Light Current vs. Forward Current
Characteristics (Typical)
3,500
3,000
2,500
(µA)
L
2,000
1,500
Light current I
1,000
500
0
0 1020304050
Forward current IF (mA)
Ta = 25°C
CE
= 5 V
V
Fig 6. Dark Current vs. Ambient
Temperature Characteristics (Typical)
Fig 7. Response Time vs. Load
Resistance Characteristics (Typical)
Fig 8. Sensing Position Characteristics
(Typical)
Fig 9. Sensing Position Characteristics
(Typical)
2
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