Omron EE-SX1107 User Manual
Photomicrosensor (Transmissive)
EE-SX1107
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
Optical
axis
Cross section AA
Recommended Soldering
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Pattern
Unless otherwise specified, the
tolerances are ±0.15 mm.
■ Features
• Ultra-compact with a 3.4-mm-wide sensor and a 1-mm-wide slot.
• PCB surface mounting type.
• High resolution with a 0.15-mm-wide aperture.
• RoHS Compliant.
■ Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rated value
Emitter Forward current I
Pulse forward current I
Reverse voltage V
Detector Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current I
Collector dissipation P
Ambient
temperature
Operating Topr –30°C to 85° C
Storage Tstg –40° C to 90°C
F
FP
V
V
C
25 mA (see note 1)
100 mA (see note 2)
5 V
R
20 V
CEO
5 V
ECO
20 mA
75 mW (see note 1)
C
Reflow soldering Tsol 240° C (see note 3)
Manual soldering Tsol 300° C (see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25° C.
2. Duty: 1/100; Pulse width: 0.1 ms
3. Complete soldering within 10 seconds for reflow soldering
and within 3 seconds for manual soldering.
■ Ordering Information
Description Model
Photomicrosensor (transmissive) EE-SX1107
■ Electrical and Optical Characteristics (Ta = 25° C)
Item Symbol Value Condition
Emitter Forward voltage V
Reverse current I
Peak emission wavelength λ
Detector Light current I
Dark current I
Leakage current I
Collector–Emitter saturated voltage V
Peak spectral sensitivity wavelength λ
F
R
P
L
D
LEAK
(sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 50 µA
CE
P
Rising time tr 10 µs typ. V
Falling time tf 10 µs typ. V
1.1 V typ., 1.3 V max. IF = 5 mA
10 µA max. VR = 5 V
940 nm typ. IF = 20 mA
50 µA min., 150 µA typ.,
500 µA max.
100 nA max. VCE = 10 V, 0 lx
--- ---
900 nm typ. ---
IF = 5 mA, VCE = 5 V
= 5 V, RL = 1 kΩ,
CC
I
= 100 µA
L
= 5 V, RL = 1 kΩ,
CC
I
= 100 µA
L
Photomicrosensor (Transmissive) EE-SX1107 1
■ Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
(mA)
F
Forward current I
Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Ta = 25°C
(mA)
L
I
= 10 mA
F
I
= 5 mA
Light current I
F
Forward Current vs. Forward
Voltage Characteristics (Typical)
(mA)
(mW)
F
C
Forward current I
Collector dissipation P
Forward voltage VF (V)
Relative Light Current vs. Ambient
Temperature Characteristics (Typical)
= 5 mA
I
(%)
L
Relative light current I
F
V
= 5 V
CE
Light Current vs. Forward Current
Characteristics (Typical)
Ta = 25°C
V
= 5 V
CE
(mA)
L
Light current I
Forward current IF (mA)
Dark Current vs. Ambient Temperature Characteristics (Typical)
(nA)
D
Dark current I
VCE = 10 V
VCE =2 V
Collector−Emitter voltage VCE (V)
Response Time vs. Load Resistance
Characteristics (Typical)
VCC = 5 V
Ta = 25°C
Response time tr, tf (µs)
Load resistance R
(kΩ)
L
Response Time Measurement
Circuit
Input
Output
Input
90 %
10 %
Output
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
I
= 5 mA
F
V
= 5 V
(%)
L
Relative light current I
Distance d (mm)
CE
Ambient temperature Ta (°C)
Sensing Position Characteristics (Typical)
I
= 5 mA
F
V
= 5 V
(%)
L
Relative light current I
Distance d (mm)
CE
2 Photomicrosensor (Transmissive) EE-SX1107
Loading...