Photomicrosensor (Transmissive)
EE-SX1070
Be sure to read Precautions on page 25.
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
17.7
6±0.2
Two, C1
0
10
−0.2
7.5±0.2
6.2
(2.5)
Two, 0.7±0.1
Four, 0.5
Four, 0.25
Internal Circuit
K
A
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
+0.2
8
−0.1
2.5
(13.8)
2.35±0.1
K
A
C
Unless otherwise specified, the
tolerances are as shown below.
E
Dimensions Tolerance
3 mm max.
< mm ≤ 6 ±0.375
3
6
< mm ≤ 10 ±0.45
10
< mm ≤ 18 ±0.55
18
< mm ≤ 30 ±0.65
JAPAN
6.6±0.1
±0.3
Optical
axis
C
E
Two, 0.7±0.1 dia.
0.5±0.1
(2.5)
5.2±0.1
■ Features
• Wide model with a 8-mm-wide slot.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
■ Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rated value
Emitter Forward current I
2.2
Pulse forward current
Reverse voltage V
Detector Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current I
Collector dissipation
Ambient temperature
Operating Topr –25°C to 95°C
Storage Tstg –30°C to
Soldering temperature Tsol 260°C
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
F
I
FP
R
V
CEO
V
ECO
C
P
C
50 mA
(see note 1)
1 A
(see note 2)
4 V
30 V
---
20 mA
100 mW
(see note 1)
100°C
(see note 3)
■ Electrical and Optical Characteristics (Ta = 25°C)
Item Symbol Value Condition
Emitter Forward voltage V
Reverse current I
Peak emission wavelength λ
Detector Light current I
Dark current I
Leakage current I
Collector–Emitter saturated voltage
Peak spectral sensitivity wavelength
F
R
P
L
D
LEAK
(sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
V
CE
λ
P
Rising time tr 4 μs typ. V
Falling time tf 4 μs typ. V
46 EE-SX1070 Photomicrosensor (Transmissive)
1.2 V typ., 1.5 V max. IF = 30 mA
0.01 μA typ., 10 μA max. VR = 4 V
940 nm typ. IF = 20 mA
0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V
2 nA typ., 200 nA max. VCE = 10 V, 0 lx
--- ---
850 nm typ. VCE = 10 V
= 5 V, RL = 100 Ω, IL = 5 mA
CC
= 5 V, RL = 100 Ω, IL = 5 mA
CC
■ Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
60
IF
50
(mA)
F
Forward current I
PC
40
30
20
10
0
−40
−20 0 20 40 60 80 100
Ambient temperature Ta (°C)
150
100
50
0
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Ta = 25°C
I
= 50 mA
F
(mA)
L
Light current I
I
= 40 mA
F
= 30 mA
I
F
I
= 20 mA
F
I
= 10 mA
F
Forward Current vs. Forward
Voltage Characteristics (Typical)
(mA)
(mW)
F
C
Ta = −30°C
Ta = 25°C
Ta = 70°C
Forward current I
Collector dissipation P
Forward voltage VF (V)
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
(%)
L
Relative light current I
= 20 mA
I
F
= 5 V
V
CE
Light Current vs. Forward Current
Characteristics (Typical)
Ta = 25°C
= 10 V
V
CE
(mA)
L
Light current I
Forward current IF (mA)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
VCE = 10 V
0 lx
(nA)
D
Dark current I
Collector−Emitter voltage VCE (V)
Response Time vs. Load Resistance Characteristics (Typical)
VCC = 5 V
Ta = 25°C
Response time tr, tf (μs)
Load resistance R
(kΩ)
L
Response Time Measurement
Circuit
Input
Output
Input
90 %
10 %
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
I
= 20 mA
F
= 10 V
V
CE
Ta = 25
(%)
L
Relative light current I
Distance d (mm)
(Center of
optical axis)
°C
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
120
I
= 20 mA
F
V
= 10 V
d
CE
Ta = 25
°C
100
(%)
L
80
60
40
20
0
Relative light current I
−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
Distance d (mm)
(Center of optical axis)
Output
EE-SX1070 Photomicrosensor (Transmissive) 47
Loading...