OMNIREL OM60L60PB, OM50F60PB, OM35F120PB, OM45L120PB Datasheet
3.1 - 59
3.1
4 11 R0
High Current, High Voltage 600V And 1200V,
Up To 75 Amp Dual IGBTs With FRED Diodes
DUAL IGBTS IN HERMETIC ISOLATED POWER
BLOCK PACKAGES
FEATURES
• Includes Internal FRED Diode
• Rugged Package Design
• Solder Terminals
• Very Low Saturation Voltage
• Fast Switching, Low Drive Current
• Available Screened To MIL-S-19500, TX, TXV And S Levels
• Ceramic Feedthroughs
DESCRIPTION
This series of hermetically packaged products feature the latest advanced IGBT
technology combined with a package designed specifically for high efficiency, high
current applications. They are ideally suited for Hi-Rel requirements where small
size, high performance and high reliability are required, and in applications such as
switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
GENERAL CHARACTERISTICS
@ 25°C (Per Switch)
SCHEMATIC
OM45L120PB
OM35F120PB
OM60L60PB
OM50F60PB
C1
G1
E1
C2
G2
E2
Preliminary Data Sheet
Part V
CE
I
C
Number (V) (A)
V
CE(sat)
Type
OM60L60PB 600 75 1.8 Volts Lo Sat.
OM45L120PB 1200 70 3 Volts Lo Sat.
OM50F60PB 600 75 2.7 Volts Hi Speed
OM35F120PB 1200 70 4 Volts Hi Speed
3.1 - 60
3.1
OM60L60PB OM45L120PB OM50F60PB OM35F120PB
ELECTRICAL CHARACTERISTICS: OM60L60PB
(TC= 25°C unless otherwise specified)
Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, IC= 250 µA, VCE= 0 V V
(BR)CES
600 - - V
Zero Gate Voltage Drain Current , V
GE
= 0, VCE= Max. Rat. I
CES
- - 0.25 mA
V
CE
= 0.8 Max. Rat., VGE= 0, TC= 125°C - - 1.0 mA
Gate Emitter Leakage Current, V
GE
= ±20 V, VCE= 0 V I
GES
- - ±100 nA
ON CHARACTERISTICS
Gate-Threshold Voltage, VCE= VGE, IC= 250 µA V
GE(th)
2.5 - 5.0 V
Collector Emitter Saturation Voltage, V
GE
= 15 V, IC= 60 A V
CE(sat)
- - 1.8 V
DYNAMIC CHARACTERISTICS
Forward Transconductance VCE= 10 V, IC= 60 A g
fs
30--S
Input Capacitance V
GE
= 0, C
iss
- 4000 - pF
Output Capacitance V
CE
= 25 V, C
oss
- 340 - pF
Reverse Transfer Capacitance f = 1.0 mHz C
rss
- 100 - pF
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time t
d(on)
-50-nS
Rise Time V
CC
= 480 V, IC= 60 A, t
r
- 200 - nS
Turn-Off Delay Time R
GS
= 2.7 , VGS= 15 V, t
d(off)
- 600 - nS
Fall Time L = 100 µH t
f
- 500 - nS
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time V
CE(clamp)
= 480 V, IC= 60 A t
d(on)
- 1000 - nS
Fall Time V
GE
= 15 V, Rg= 2.7 t
f
- 1000 - nS
Turn-Off Losses L = 100 µH, T
j
= 125°C E
(OFF)
- 26 - m Ws
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F
= 60 A, Tj= 25°C
V
f
- - 1.85
V
I
F
= 60 A, Tj= 150°C - - 1.50
Maximum Reverse Current
V
R
= 600 V, Tj= 25°C
I
r
- - 200 µA
V
R
= 480 V, Tj= 125°C - - 14 mA
Reverse Recovery Time
I
F
= 1 A, di/dt = 200 A µ/S
t
rr
--50nS
V
R
= 30 V, Tj= 25°C
ELECTRICAL CHARACTERISTICS: OM45L120PB
(TC= 25°C unless otherwise specified)
Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, IC= 3 mA, VCE= 0 V V
(BR)CES
1200 - - V
Zero Gate Voltage Drain Current , V
GE
= 0, VCE= Max. Rat. I
CES
- - 3.0 mA
V
CE
= 0.8 Max. Rat., VGE= 0, Tj= 125°C - - 1.2 mA
Gate Emitter Leakage Current, V
GE
= ±20 V, VCE= 0 V I
GES
- - ±100 nA
ON CHARACTERISTICS
Gate-Threshold Voltage, VCE= VGE, IC= 4 mA V
GE(th)
4.0 - 8.0 V
Collector Emitter Saturation Voltage, V
GE
= 15 V, IC= 45 A V
CE(sat)
- - 3.0 V
DYNAMIC CHARACTERISTICS
Forward Transconductance VCE= 10 V, IC= 45 A g
fs
26--S
Input Capacitance V
GE
= 0, C
iss
- 4200 - pF
Output Capacitance V
CE
= 25 V, C
oss
- 290 - pF
Reverse Transfer Capacitance f = 1.0 mHz C
rss
-65-pF
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time t
d(on)
-80-nS
Rise Time V
CC
= 960 V, IC= 45 A, t
r
- 250 - nS
Turn-Off Delay Time R
GS
= 2.7 , VGS= 15 V, t
d(off)
- 450 - nS
Fall Time L = 100 µH t
f
- 1200 - nS
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time V
CE(clamp)
= 960 V, IC= 45 A t
d(on)
- 450 - nS
Fall Time V
GE
= 15 V, Rg= 2.7 t
f
- 1200 - nS
Turn-Off Losses L = 100 µH, T
j
= 125°C E
(OFF)
- 27 - m Ws
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F
= 52 A, Tj= 25°C
V
f
- - 2.55
V
I
F
= 52 A, Tj= 150°C - - 2.15
Maximum Reverse Current
V
R
= 1200 V, Tj= 25°C
I
r
- - 2.2 mA
V
R
= 960 V, Tj= 125°C - - 14 mA
Reverse Recovery Time
I
F
= 1 A, di/dt = 200 A µ/S
t
rr
--60nS
V
R
= 30 V, Tj= 25°C
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