OMNIREL OM200F120CMD Datasheet
205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com
ELECTRICAL CHARACTERISTICS: OM200F120CMD (Tc= 25°°C unless otherwise specified)
Characteristic Symbol Min. Typ. Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, VCE=0V VCES 1200 V
Zero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 10
Gate Emitter Leakage Current, VGE=+/-15V, VCE=0V IGES 100
ON CHARACTERISTICS
Gate Threshold Voltage, VCE=VGE, IC=6mA VGE(TH) 4.5 5.5 6.5 V
Collector Emitter Saturation Voltage, VGE=15V, Ic=200A VCE(SAT) 2.5 3.0 V
DYNAMIC CHARACTERISTICS
Fwd. Transconductance VCE=5V, IC=200A gfs 50 69 S
Input Capacitance VGE=0 Cies 17 nF
Output Capacitance VCE=25V Coes 5 nF
Rev. Transfer Capacitance f=1.0MHz Cres 2 nF
SWITCHING INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time t(on) 175
Rise Time VCC= 600V, IC=200A tr 140 nS
Turn-on Losses Eon 28 mJ
VGE=+15/-10V, RG=5.1Ω
Turn-off Delay Time
L=100µH
td(off) 720
Fall Time tf 120 nS
Turn-off Losses Eoff 15 mJ
µA
µA
nS
nS
DIODE CHARACTERISTICS
Maximum Forward Voltage
Reverse Recovery
Characteristics
IF=200A, Tj=25°C
Tj=125°C
VR=600V, Tj=25°C
IF=200A, Tj=125°C
dI/dt=-1500A/µS Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
VF 2.0 2.8 V
1.8 2.3
Qrr 10
15
Irr 75 A
95
trr 100 nS
150
µC
THERMAL AND MECHANICAL CHARACTERISTICS
Thermal Resistance, Junction to Case (Per IGBT) RthJC 0.07
Thermal Resistance, Junction to Case (Per Diode) RthJC 0.12
Maximum Junction Temperature TjMAX 150
Isolation Voltage Vis
RMS
2500 V
°C/W
°C/W
°C
Screw Torque Mounting - 15 20 in-lb
Screw Torque (M6) Terminals 10 12 in-lb
Screw Torque (M3) Terminals - 6 8 in-lb
Module Weight - 320 Grams
12/08/98 Rev. C 1
205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com
Switching energy vs Temperature
Energyf (mJ)
Energy (mJ)
Energyf (mJ)
OM200F120CMD
IGBT Collector Current vs. Collector-emitter Voltage
400
Vge=15V
300
Ic(A)
200
100
0
0 2 4 6 8 10 12
IGBT Collector Current vs. Collector-emitter Voltage
400
Vge=13V
Vge=15V
300
Ic(A)
200
100
0
0 2 4 6 8 10 12
Switching energy vs Gate Resistor(Rg)
Tj=25°C
Vge=13V
Vge=11V
Vge=9V
Vge=7V
Vce(V)
Tj=125°C
Vge=11V
Vce(V)
Vce =600V,Ic=200A, Tj=125°C
Vge=9V
Vge=7V
Vge=5V
IGBT Collector Current vs. Collector-emitter Voltage
400
Vge=15V
Tj=- 55°C
Vge=13V
Vge=11V
300
Ic(A)
200
100
0
0 2 4 6 8 10 12
Vce(V)
Vce =600V,Ic=200A
50
40
30
20
10
0
0 25 50 75 100 125 150
Switching energy vs Collector current (Ic)
Vce =600V,Tj=25°C
Eoff
Eon
T(°C)
Vge=9V
Vge=7V
50
40
30
20
10
0
0 5 10 15 20 25
Eoff
Eon
Rg(Ohms)
50
40
30
20
10
0
0 25 50 75 100 125 150 175 200
Eoff
Eon
Ic(A)
12/08/98 Rev. C 2
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