OMNIREL OM75L60CMIB, OM75L60CMIS, OM100L60CMIS Datasheet
Patent Pending
205 Crawford Street, Leominster, MA 01453 USA (978) 534-5776 FAX (978) 537-4246
Visit Our Web Site at www.omnirel.com
OM100L60CMIS, OM75L60CMIS, OM75L60CMIB
CERMOD™ HERMETIC HIGH POWER MODULES,
THREE PHASE BRIDGE, IGBT’S
75 & 100 A, 600V Three Phase Bridge
Configuration in Ceramic to Metal
Sealed Modules
FEATURES
• Rugged, Lightweight Hermetic Ceramic Package
• NPT IGBT Technology
• Soft Recovery Rectifiers
• Zener Gate Protection
• Short Circuit Capability
• -5 5 C to +150 C Operating Temperature Range
• Hi-Rel Screened Available
DESCRIPTION
CERMOD™ modules are isolated fully hermetic power modules which combine the latest
NPT IGBT and Soft Recovery Rectifier technology housed in a low thermal resistance
ceramic to metal sealed light weight package. This series of CERMOD™ power modules are
offered in a three phase bridge configuration as Phase Leg and chopper configurations.
Designed for tough environments, these high power modules are ideally suited in motor
control, inverters, switching power supplies, in aerospace, defense, transportation and high
power industrial equipment and systems.
GENERAL CHARACTERISTICS @ 25°C
PART NUMBER V
OM100L60CMIS 600 100 2.5 3 Phase Bridge
OM75L60CMIS
OM75L60CMIB 600 75 2.5 3 Phase Bridge
9 5 R0
V olts IC AMPS V
CE,
600 75 2.5 3 Phase Bridge
(sat) Volts CONFIGURATION
CE
& Braking Transistor
Rev.05 Omnirel LLC 205 Crawford Street, Leominster, MA 01453
4/15/99 www.omnirel.com (978) 534-5776 FAX (978) 537-4246
ELECTRICAL CHARACTERISTICS: (Tc= 25°°C unless otherwise specified)
Characteristic Symbol Min. Typ. Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, VGE =0V VCES 600 V
Zero Gate Voltage Collector Current, VGE =0, VCE =600V ICES 25
µA
Gate Emitter Leakage Current, VGE =+/-15V, VCE =0V IGES 2
µA
ON CHARACTERISTICS
Gate Threshold Voltage, VCE =V GE, IC=6mA VGE(TH) 4.5 6.0 6.5 V
Collector Emitter Saturation Voltage, VGE =15V, IC=100A VCE(SAT) 2.0 2.5 V
DYNAMIC CHARACTERISTICS
Fwd. Transconductance VCE=5V, IC=100A gfs 55 S
Input Capacitance VGE =0 Cies 4.5 nF
Output Capacitance VCE =25V Coes 0.7 nF
Rev. Transfer Capacitance f=1.0MHz Cres 1.7 n F
SWITCHING INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time t(on) 192 nS
Rise Time VCC = 300V, IC=100A tr 81 nS
Turn-on Losses
V
GE =+15/-10V, RG =10Ω
Eon 5.4 mJ
Turn-off Delay Time
L=100µH,Tj=125°C
td(off) 285 nS
Fall Time tf 44 nS
Turn-off Losses Eoff 1.4 mJ
DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F=100A, Tj=25°C
V
F 1.4 1.8 V
Tj=125°C
1.5 1.9
VR =300V, Tj=25°C
Qrr 2
µC
Reverse Recovery
I
F=100A, Tj=125°C
3.7
Characteristics
dI/dt=-1080A/µS Tj=25°C
Irr 51 A
Tj=125°C
68
Tj=25°C
trr 124 nS
Tj=125°C
215
THERMAL AND MECHANICAL CHARACTERISTICS
Thermal Resistance, Junction to Case (Per IGBT)RthJC 0.35
°C/W
Thermal Resistance, Junction to Case (Per Diode)RthJC 0.6
°C/W
Maximum Junction Temperature TjMAX 150
°C
Isolation Voltage Vis
RMS
-V
Screw Torque Mounting- 15 20 in-lb
Module Weight - 250 Grams
OM100L60CMIS
OM100L60CMIS
Rev.05 Omnirel LLC 205 Crawford Street, Leominster, MA 01453 U
4/15/99 www.omnirel.com (978) 534-5776 FAX (978) 537-4246
IGBT Collector Current vs Collector Emitte
r
Tj=25C
0
20
40
60
80
100
120
0123456
Vce(V)
Ic(A)
9Vge
11Vge
13Vge
15Vge
Tj=+125C
0
20
40
60
80
100
120
0123456
Vce(V)
Ic(A)
9Vge
11Vge
13Vge
15Vge
n
0
1
2
3
4
5
6
0 50 100 150
Ic(A)
Eon
Eof
=
0
1
2
3
4
5
6
7
0 25 50 75 100 125 150
T(C)
Eon
Eof
r
Vce=300V,Ic=100,Tj=25C
0
1
2
3
4
5
6
7
8
5 101520253035
Eon
Eof
r
Tj=-55C
0
20
40
60
80
100
120
0123456
Vce(V)
Ic(A)
9Vge
11Vge
13Vge
15Vge
Vge =0V
0
20
40
60
80
100
120
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2
Vf(V)
If(A)
+25C
-55C
IGBT Collector Current vs Collector Emitter
Switcing Energy vs Temperature Vce=300V,Ic
Energy(mJ)
IGBT Collector Current vs Collector Emitte
Diode Forward Current vs. Forward Vo
Switching Energy vs Collector Curre
Vce=100V,Tj=25C
Energy(mJ)
Switching Energy vs Gate Resiste
Energy(mJ)
Rg(ohms)
+125C
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