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JANTXV2N7228
Datasheet (OMNIREL)
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Datasheet JANTXV2N7227, JANTXV2N7225, JANTXV2N7224, JANTX2N7227, JANTX2N7225 Datasheet (OMNIREL)

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Page 1
2N7224, JANTX2N7224, JANTXV2N7224 2N7227, JANTX2N7227, JANTXV2N7227 2N7225, JANTX2N7225, JANTXV2N7225 2N7228, JANTX2N7228, JANTXV2N7228
JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/592
100V Thru 500V, Up to 34A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated
FEATURES
• Repetitive Avalanche Rating
• Isolated and Hermetically Sealed
• Low R
• Ease of Paralleling
• Ceramic Feedthroughs
• Qualified to MIL-PRF-19500
This hermetically packaged QPL product features the latest advanced MOSFET and packaging technology. I t i s ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
DS(on)
PRIMARY ELECTRICAL CHARACTERISTICS @ TC= 25°C
PART NUMBER V
V olts R
DS,
2N7224 100 .070 34 2N7225 200 .100 27.4 2N7227 400 .315 14 2N7228 500 .415 12
.144 DIA.
.685 .665
.045 .035
DS(on)
MECHANICAL OUTLINESCHEMATIC
.545 .535
123
.800 .790
.550 .510
.150 TYP.
I
D,
Amps
.550 .530
.260 .249
.050 .040
.005
.150 TYP.
Pin Connection Pin 1: Drain Pin 2: Source Pin 3: Gate
4 11 R0
3.1 - 1
Page 2
2N7224, JANTX2N7224, JANTXV2N7224 2N7227, JANTX2N7227, JANTXV2N7227 2N7225, JANTX2N7225, JANTXV2N7225 2N7228, JANTX2N7228, JANTXV2N7228
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted
Parameter JANTXV, JANTX, 2N7224 Units
ID @ V ID @ V I
= 10V, TC= 25°C Continuous Drain Current 34 A
GS
= 10V, TC= 100°C Continuous Drain Current 21 A
DM
GS
Pulsed Drain Current
1
PD@ TC= 25°C Maximum Power Dissipation 150 W
Linear Derating Factor 1. 2 W/°C
V
GS
E
AS
I
AR
E
AR J Operating Junction
T
Gate-Source Voltage ± 2 0 V Single Pulse Avalanche Energy Avalanche Current
1
Repetitive Avalanche Energy
2
1
TSTG Storage Temperature Range
Lead Temperature 300(.06 from case for 10 sec) °C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
Drain-Source 100 V VGS= 0V, ID=1.0 mA,
BV
DSS
Breakdown Voltage
R
Static Drain-to-Source - ----- 0.07 VGS= 10 V, ID= 21 A
DS(on)
On-State Resistance ------ 0.081 VGS= 10 V, ID= 34 A
V
Gate Threshold Voltage 2. 0 --- 4.0 V V
GS(th)
I
Zero Gate Voltage Drain ------ 25
DSS
Current ------ 250 V
I
Gate -to-Source Leakage Forward ------ 100 nA VGS= 20 V
GSS
I
Gate -to-Source Leakage Reverse ------ -100 nA VGS= -20 V
GSS
Q
On-state Gate Charge ------ 125 n C VGS= 10 V, ID= 34A
G(on)
Q
Gate-to-Source Charge ------22nCVDS= 50 V
GS
Q
Gate-to-Drain (“Miller”) Charge - ----- 65 n C See note 4
Gd
t
Turn-On Delay Time ------35nsVDD= 50 V, ID= 21A, RG = 2.35
D(on)
t
Rise Time ------ 190 ns See note 4
r
t
Turn-Off Delay Time ------ 170 n s
D(off)
t
Fall Time ------ 130 n s
r
µA
136 A
4
150
34 15
4
4
mJ
mJ
-55 to 150 °C
3
3
= VGS, ID= 250 µA
DS
VDS= 80 V, VGS= 0V
= 80 V, VGS= 0V, TJ= 125°C
DS
A
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Diode Forward Voltage ------ 1.8 V TJ= 25°C, IS= 34A 3, VGS= 0 V
V
SD
t
Reverse Recovery Time ------ 500 n s TJ= 25°C, IF= 34A,d i/dt<100A/µs
trr
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
Junction-to-Case ------ 0.83 Mounting surface flat,
thJC
R
Case-to-sink --- 0.21 - -- °C/W smooth, and greased
thCS
R
Junction-to-Ambient ------ 48 Typical socket mount
thJA
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @V
3. Pulse width <
= 25V, Starting TJ= 25°C, L > 200 µH, RG = 25 , Peak IL = 34A
DD
300 µs; Duty Cycle < 2%
4. See MIL-S-19500/592
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Page 3
2N7224, JANTX2N7224, JANTXV2N7224 2N7227, JANTX2N7227, JANTXV2N7227 2N7225, JANTX2N7225, JANTXV2N7225 2N7228, JANTX2N7228, JANTXV2N7228
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted
Parameter JANTXV, JANTX, 2N7225 Units
ID @ V ID @ V I
= 10V, TC= 25°C Continuous Drain Current 27.4 A
GS
= 10V, TC= 100°C Continuous Drain Current 17 A
DM
GS
Pulsed Drain Current
1
PD@ TC= 25°C Maximum Power Dissipation 150 W
Linear Derating Factor 1. 2 W/°C
V
GS
E
AS
I
AR
E
AR
J Operating Junction
T
Gate-Source Voltage ± 2 0 V Single Pulse Avalanche Energy Avalanche Current
1
Repetitive Avalanche Energy
2
1
TSTG Storage Temperature Range
Lead Temperature 300(.06 from case for 10 sec) °C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
Drain-Source 200 V VGS= 0V, ID=1.0 mA,
BV
DSS
Breakdown Voltage
R
Static Drain-to-Source - ----- 0.100 VGS= 10 V, ID= 17 A
DS(on)
On-State Resistance ------ 0.105 VGS= 10 V, ID= 27.4 A
V
Gate Threshold Voltage 2. 0 --- 4.0 V V
GS(th)
I
Zero Gate Voltage Drain ------ 25
DSS
Current ------ 250 V
I
Gate -to-Source Leakage Forward ------ 100 nA VGS= 20 V
GSS
I
Gate -to-Source Leakage Reverse ------ -100 nA VGS= -20 V
GSS
Q
On-state Gate Charge ------ 115 nC VGS= 10 V, ID= 27.4A
G(on)
Q
Gate-to-Source Charge ------22nCVDS= 100 V
GS
Q
Gate-to-Drain (“Miller”) Charge - ----- 60 n C See note 4
Gd
t
Turn-On Delay Time ------35nsVDD= 100 V, ID= 17A, RG = 2.35
D(on)
t
Rise Time ------ 190 ns See note 4
r
t
Turn-Off Delay Time ------ 170 ns
D(off)
t
Fall Time ------ 130 n s
r
µA
110 A
4
500
27.4 15
4
4
mJ
mJ
-55 to 150 °C
3
3
= VGS, ID= 250 µA
DS
VDS= 160 V, VGS= 0V
= 160 V, VGS= 0V, TJ= 125°C
DS
A
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Diode Forward Voltage ------ 1.9 V TJ= 25°C, IS= 27.4A 3, VGS= 0 V
V
SD
t
Reverse Recovery Time ------ 950 n s TJ= 25°C, IF= 27.4A,di/dt<100A/µs
trr
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
Junction-to-Case ------ 0.83 Mounting surface flat,
thJC
R
Case-to-sink --- 0.21 - -- °C/W smooth, and greased
thCS
R
Junction-to-Ambient ------ 48 Typical socket mount
thJA
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @V
3. Pulse width <
= 50V, Starting TJ= 25°C, L > 1 mH, RG = 25 , Peak IL = 27.4A
DD
300 µs; Duty Cycle < 2%
4. See MIL-S-19500/592
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Page 4
2N7224, JANTX2N7224, JANTXV2N7224 2N7227, JANTX2N7227, JANTXV2N7227 2N7225, JANTX2N7225, JANTXV2N7225 2N7228, JANTX2N7228, JANTXV2N7228
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted
Parameter JANTXV, JANTX, 2N7227 Units
ID @ V ID @ V I
= 10V, TC= 25°C Continuous Drain Current 14 A
GS
= 10V, TC= 100°C Continuous Drain Current 9. 0 A
DM
GS
Pulsed Drain Current
1
PD@ TC= 25°C Maximum Power Dissipation 150 W
Linear Derating Factor 1. 2 W/°C
V
GS
E
AS
I
AR
E
AR J Operating Junction
T
Gate-Source Voltage ± 2 0 V Single Pulse Avalanche Energy Avalanche Current
1
Repetitive Avalanche Energy
2
1
TSTG Storage Temperature Range
Lead Temperature 300(.06 from case for 10 sec) °C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
Drain-Source 400 V VGS= 0V, ID=1.0 mA,
BV
DSS
Breakdown Voltage
R
Static Drain-to-Source - ----- 0.315 VGS= 10 V, ID= 9.0 A
DS(on)
On-State Resistance ------ 0.415 VGS= 10 V, ID= 14 A
V
Gate Threshold Voltage 2. 0 --- 4.0 V V
GS(th)
I
Zero Gate Voltage Drain ------ 25
DSS
Current ------ 250 V
I
Gate -to-Source Leakage Forward ------ 100 nA VGS= 20 V
GSS
I
Gate -to-Source Leakage Reverse ------ -100 nA VGS= -20 V
GSS
Q
On-state Gate Charge ------ 110 nC VGS= 10 V, ID= 14A
G(on)
Q
Gate-to-Source Charge ------18nCVDS= 200 V
GS
Q
Gate-to-Drain (“Miller”) Charge - ----- 65 n C See note 4
Gd
t
Turn-On Delay Time ------35nsVDD= 200 V, ID= 9 A, RG = 2.35
D(on)
t
Rise Time ------ 190 ns See note 4
r
t
Turn-Off Delay Time ------ 170 ns
D(off)
t
Fall Time ------ 130 n s
r
µA
56 A
4
700
14 15
4
4
mJ
mJ
-55 to 150 °C
3
3
= VGS, ID= 250 µA
DS
VDS= 320 V, VGS= 0V
= 320 V, VGS= 0V, TJ= 125°C
DS
A
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Diode Forward Voltage ------ 1.7 V TJ= 25°C, IS= 14A 3, VGS= 0 V
V
SD
t
Reverse Recovery Time ------ 1200 ns TJ= 25°C, IF= 14A,d i/dt<100A/µs
trr
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
Junction-to-Case ------ 0.83 Mounting surface flat,
thJC
R
Case-to-sink --- 0.21 - -- °C/W smooth, and greased
thCS
R
Junction-to-Ambient ------ 48 Typical socket mount
thJA
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @V
3. Pulse width <
= 50V, Starting TJ= 25°C, L > 6.25 mH, RG = 25 , Peak IL = 14A
DD
300 µs; Duty Cycle < 2%
4. See MIL-S-19500/592
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Page 5
2N7224, JANTX2N7224, JANTXV2N7224 2N7227, JANTX2N7227, JANTXV2N7227 2N7225, JANTX2N7225, JANTXV2N7225 2N7228, JANTX2N7228, JANTXV2N7228
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted
Parameter JANTXV, JANTX, 2N7228 Units
ID @ V ID @ V I
= 10V, TC= 25°C Continuous Drain Current 12 A
GS
= 10V, TC= 100°C Continuous Drain Current 8. 0 A
DM
GS
Pulsed Drain Current
1
PD@ TC= 25°C Maximum Power Dissipation 150 W
Linear Derating Factor 1. 2 W/°C
V
GS
E
AS
I
AR
E
AR J Operating Junction
T
Gate-Source Voltage ± 2 0 V Single Pulse Avalanche Energy Avalanche Current
1
Repetitive Avalanche Energy
2
1
TSTG Storage Temperature Range
Lead Temperature 300(.06 from case for 10 sec) °C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
Drain-Source 500 V VGS= 0V, ID=1.0 mA,
BV
DSS
Breakdown Voltage
R
Static Drain-to-Source - ----- 0.415 VGS= 10 V, ID= 8.0 A
DS(on)
On-State Resistance ------ 0.515 VGS= 10 V, ID= 12 A
V
Gate Threshold Voltage 2. 0 --- 4.0 V V
GS(th)
I
Zero Gate Voltage Drain ------ 25
DSS
Current ------ 250 V
I
Gate -to-Source Leakage Forward ------ 100 nA VGS= 20 V
GSS
I
Gate -to-Source Leakage Reverse ------ -100 nA VGS= -20 V
GSS
Q
On-state Gate Charge ------ 120 n C VGS= 10 V, ID= 12A
G(on)
Q
Gate-to-Source Charge ------19nCVDS= 250 V
GS
Q
Gate-to-Drain (“Miller”) Charge - ----- 70 n C See note 4
Gd
t
Turn-On Delay Time ------35nsVDD= 250 V, ID= 8A, RG = 2.35
D(on)
t
Rise Time ------ 190 ns See note 4
r
t
Turn-Off Delay Time ------ 170 ns
D(off)
t
Fall Time ------ 130 n s
r
µA
48 A
4
750
12 15
4
4
mJ
mJ
-55 to 150 °C
3
3
= VGS, ID= 250 µA
DS
VDS= 400 V, VGS= 0V
= 400 V, VGS= 0V, TJ= 125°C
DS
A
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Diode Forward Voltage ------ 1.7 V TJ= 25°C, IS= 12A 3, VGS= 0 V
V
SD
t
Reverse Recovery Time ------ 1600 ns TJ= 25°C, IF= 12A,d i/dt<100A/µs
trr
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
Junction-to-Case ------ 0.83 Mounting surface flat,
thJC
R
Case-to-sink --- 0.21 - -- °C/W smooth, and greased
thCS
R
Junction-to-Ambient ------ 48 Typical socket mount
thJA
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @V
3. Pulse width <
= 50V, Starting TJ= 25°C, L > 9.4 mH, RG = 25 , Peak IL = 12A
DD
300 µs; Duty Cycle < 2%
4. See MIL-S-19500/592
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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