OMNIREL JANTXV2N6770, JANTXV2N6768, JANTXV2N6764, JANTX2N6770, JANTX2N6768 Datasheet
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2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768
2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770
JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE,
QUALIFIED TO MIL-PRF-19500/543
100V Thru 500V, Up to 38A, N-Channel,
Enhancement Mode MOSFET Power Transistor
FEATURES
• Low R
DS(on)
• Ease of Paralleling
• Qualified to MIL-PRF-19500/543
DESCRIPTION
This hermetically packaged QPL product features the latest advanced MOSFET technology. I t i s ideally suited for
Military requirements where small size, high performance and high reliability are required, and in applications such as
switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
PRIMARY ELECTRICAL CHARACTERISTICS @ TC= 25°C
PART NUMBER V
2N6764 100 .055 38
2N6766 200 .085 30
2N6768 400 .30 14
2N6770 500 .40 12
1.53
REF.
V olts R
DS,
I
DS(on)
Amps
D,
MECHANICAL OUTLINESCHEMATIC
1.197
1.177
7 03 R0
0.875
0.135
MAX.
SEATING
PLANE
Note: For part number 2N6764 and 2N6766 the mechanical dimensions are the same as above
except the lead diameter is 0.058 min to 0.063 max.
MAX.
0.450
0.250
0.312
MIN.
0.043
0.038
2 PLCS.
0.188 R.
MAX.
0.225
0.205
0.161
0.151
0.675
0.655
0.525 R.
MAX.
0.440
0.420
Pin Connection
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768
2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted
Parameter JANTXV, JANTX, 2N6764 Units
ID @ V
ID @ V
I
= 10V, TC= 25°C Continuous Drain Current 38 A
GS
= 10V, TC= 100°C Continuous Drain Current 24 A
DM
GS
Pulsed Drain Current
1
PD@ TC= 25°C Maximum Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
V
GS
E
AS
I
AR
J Operating Junction
T
Gate-Source Voltage ± 2 0 V
Single Pulse Avalanche Energy
Avalanche Current
1
2
TSTG Storage Temperature Range
Lead Temperature 300(.06 from case for 10 sec) °C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
Drain-Source 100 V VGS= 0V, ID=1.0 mA,
BV
DSS
Breakdown Voltage
R
Static Drain-to-Source - ----- 0.055 VGS= 10 V, ID= 24 A
DS(on)
On-State Resistance ------ 0.065 VGS= 10 V, ID= 38 A
V
Gate Threshold Voltage 2. 0 --- 4.0 V V
GS(th)
I
Zero Gate Voltage Drain ------ 25
DSS
Current ------ 250 V
I
Gate -to-Source Leakage Forward ------ 100 nA VGS= 20 V
GSS
I
Gate -to-Source Leakage Reverse ------ -100 nA VGS= -20 V
GSS
Q
On-state Gate Charge 50 --- 125 nC VGS= 10 V, ID= 38A
G(on)
Q
Gate-to-Source Charge 8 ---22nCVDS= 50 V
GS
Q
Gate-to-Drain (“Miller”) Charge 25 - -- 65 n C See note 4
Gd
t
Turn-On Delay Time ------35nsVDD= 50 V, ID= 38A, RG =2.35
D(on)
t
Rise Time ------ 190 ns See note 4
r
t
Turn-Off Delay Time ------ 170 n s
D(off)
t
Fall Time - ----- 130 ns
r
µA
152 A
4
150
38
4
mJ
-55 to 150 °C
3
3
= VGS, ID= 250 µA
DS
VDS= 80 V, VGS= 0V
= 80 V, VGS= 0V, TJ= 125°C
DS
A
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Diode Forward Voltage ------ 1.9 V TJ= 25°C, IS= 38A 3, VGS= 0 V
V
SD
t
Reverse Recovery Time ------ 500 n s TJ= 25°C, IF= 38A,d i/dt< 100A/µs
trr
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
Junction-to-Case ------ 0.83 Mounting surface flat,
R
thJC
R
Case-to-sink --- 0.21 - -- °C/W smooth, and greased
thCS
R
Junction-to-Ambient ------ 48 Typical socket mount
thJA
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @V
3. Pulse width <
= 50V, Starting TJ= 25 °C, L = 100 µH + 10%, RG = 25 , Peak IL = 38A
DD
300 µs; Duty Cycle < 2%
4. See MIL-S-19500/543
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
3
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