MSC23B236A-xxBS8/DS8¡ Semiconductor
¡ Semiconductor
MSC23B236A-xxBS8/DS8
2,097,152-Word ¥ 36-Bit DRAM MODULE : FAST PAGE MODE TYPE
DESCRIPTION
The Oki MSC23B236A-xxBS8/DS8 is a fully decoded 2,097,152-word ¥ 36-bit CMOS dynamic
random access memory composed of four 16-Mb (1M ¥ 16) DRAMs in SOJ and four 2-Mb (1M
¥ 2) DRAMs in SOJ. The mounting of eight DRAMs together with decoupling capacitors on a 72pin glass epoxy SIMM Package supports any application where high density and large capacity
of storage memory are required.
FEATURES
• 2,097,152-word ¥ 36-bit (Parity) organization
• 72-pin SIMM
MSC23B236A-xxBS8 : Gold tab
MSC23B236A-xxDS8 : Solder tab
• Single 5 V supply ±10% tolerance
• Input : TTL compatible
• Output : TTL compatible, 3-state, nonlatch
• Refresh : 1024 cycles/16 ms
• CAS before RAS refresh, CAS before RAS hidden refresh, RAS-only refresh capability
• Fast Page Mode capability
PRODUCT FAMILY
Family
MSC23B236A-60BS8/DS8
MSC23B236A-70BS8/DS8
Access Time (Max.)
RAC
60 ns
70 ns
t
AA
30 ns
35 ns
t
CAC
15 ns
20 ns
Cycle Time
(Min.)
110 ns
130 ns
Power Dissipation
Operating (Max.)
3410 mW
3080 mW
Standby (Max.)t
44 mW
159
MSC23B236A-xxBS8/DS8 ¡ Semiconductor
PIN CONFIGURATION
MSC23B236A-xxBS8/DS8
(Unit : mm)
* 1
107.95 ±0.2
101.19 Typ.3.38 ±0.13
3.18f
25.4 ±0.13
10.16
±0.13
6.35
±0.13
2.03 ±0.13
6.35 Typ.
1
1.27 ±0.1
R1.57
95.25
6.35
1.04 Typ.
*1 The common size difference of the board width 12.5 mm of its height is
specified as ±0.2. The value above 12.5 mm is specified as ±0.5.
Pin No.
Pin Name
11631
2 173247
3 183348
4 193449
5 203550
6 213651
7 223752
8 233853
9 243954
10 25 40 55
11 26 41 56
12 27 42 57
13 28 43 58
14 29 44 59
15 30 45 60
V
SS
DQ0 A5 A9 WE
DQ18 A6 RAS3 NC
DQ1 NC RAS2 DQ9
DQ19 DQ4 DQ26 DQ27
DQ2 DQ22 DQ8 DQ10
DQ20 DQ5 DQ17 DQ28
DQ3 DQ23 DQ35 DQ11
DQ21 DQ6 V
V
CC
NC DQ7 CAS2 DQ30
A0 DQ25 CAS3 DQ13
A1 A7 CAS1 DQ31
A2 NC RAS0 V
A3 V
Pin No.
Pin Name
A4 A8 NC
Pin No.
Pin Name
SS
Pin No.
46
Pin Name
DQ24 CAS0 DQ12
CC
RAS1 DQ32
DQ29
CC
72
1.27
9.3 Max.
5.7 Min.
+0.1
–0.08
Pin No.
61
62
63
64
65
66
67
68
69
70
71
72
Pin Name
DQ14
DQ33
DQ15
DQ34
DQ16
NC
PD1
PD2
PD3
PD4
NC
V
SS
Presence Detect Pins
Pin No.
67 PD1
160
Pin Name
MSC23B236A
-60BS8/DS8
NC
NC69 PD3
MSC23B236A
-70BS8/DS8
NC
NCNC68 PD2
V
SS
NCNC70 PD4
BLOCK DIAGRAM
A0 - A9
CAS0
CAS1
WE
RAS0
A0 - A9
RAS
LCAS
UCAS
WE
OE
V
MSC23B236A-xxBS8/DS8¡ Semiconductor
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
V
SS
CC
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
V
A0 - A9
RAS
RAS1
LCAS
UCAS
WE
OE
V
CC
SS
RAS2
A0 - A9
RAS
CAS1
CAS2
WE
OE
V
A0 - A9
RAS
LCAS
UCAS
WE
OE
V
DQ1
DQ2
DQ8
DQ17
DQ1
DQ2
A0 - A9
RAS
CAS1
CAS2
WE
OE
V
SS
SS
CC
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
V
CC
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ27
DQ28
DQ29
DQ30
DQ31
DQ32
DQ33
DQ34
V
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
V
V
CC
SS
A0 - A9
RAS
RAS3
LCAS
UCAS
WE
OE
V
CC
SS
CAS2
CAS3
V
CC
C1 C8
V
SS
A0 - A9
RAS
CAS1
CAS2
WE
OE
V
DQ1
DQ2
DQ26
DQ35
DQ1
DQ2
A0 - A9
RAS
CAS1
CAS2
WE
OE
V
SS
CC
V
V
CC
SS
161
MSC23B236A-xxBS8/DS8 ¡ Semiconductor
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
Voltage VCC Supply Relative to V
SS
SS
Symbol
V
IN
V
Short Circuit Output Current I
Power Dissipation P
Operating Temperature T
Storage Temperature T
, V
OS
opr
OUT
CC
D
stg
Rating Unit
–1.0 to 7.0 V
–1.0 to 7.0 V
50 mA
9.2 W
0 to 70 °C
–40 to 125 °C
Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to the conditions as detailed in the
operational sections of this data sheet. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
Recommended Operating Conditions
(Ta = 0°C to 70°C)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
Typ.
4.5 5.0 5.5 V
000V
2.4 — 6.5 V
–1.0 — 0.8 V
Max.
Unit
Capacitance
Parameter
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
DQ
Typ.
Note : Capacitance measured with Boonton Meter.
(Ta = 25°C, f = 1 MHz)
Max.
—53
Unit
pFInput Capacitance (A0 - A9)
pFInput Capacitance (WE)—65
pFInput Capacitance (RAS0 - RAS3)—20
pFInput Capacitance (CAS0 - CAS3)—35
pFI/O Capacitance (DQ0 - DQ35) — 20
162
MSC23B236A-xxBS8/DS8¡ Semiconductor
DC Characteristics
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Average Power
Supply Current
(Operating)
Power Supply
Current (Standby)
Average Power
Supply Current
(RAS-only Refresh)
Average Power
Supply Current
(CAS before RAS Refresh)
Average Power
Supply Current
(Fast Page Mode)
Symbol
I
LI
I
LO
V
OH
V
OL
I
CC1
I
CC2
I
CC3
I
CC6
I
CC7
Condition
0 V £ VI £ 6.5 V;
All other pins not
under test = 0 V
disable
D
OUT
0 V £ V
I
OH
I
OL
£ 5.5 V
O
= –5.0 mA
= 4.2 mA
RAS, CAS cycling,
= Min.
t
RC
RAS, CAS = V
IH
RAS, CAS
≥ V
–0.2 V
CC
RAS cycling,
= Min.
,
IH
CAS = V
t
RC
RAS cycling,
CAS before RAS,
= Min.
t
RC
RAS = V
,
IL
CAS cycling,
= Min.
t
PC
(VCC = 5 V ±10%, Ta = 0°C to 70°C)
MSC23B236A MSC23B236A
-60BS8/DS8 -70BS8/DS8
Min.
–80
–20
2.4
0
—
—
—
—
—
—
Max.
80
20
V
CC
0.4
620
16
8
620
620
480
Min.
–80
–20
2.4
0
—
—
—
—
—
—
Max.
80
20
V
0.4
560
16
560
560
450
8
CC
Unit
µA
µA
V
V
mA
mA
mA
mA
mA
mA
Note
1, 2
1
1
1, 2
1, 2
1, 3
Notes: 1. ICC Max. is specified as ICC for output open condition.
2. Address can be changed once or less while RAS=VIL.
3. Address can be changed once or less while CAS=VIH.
163
MSC23B236A-xxBS8/DS8 ¡ Semiconductor
AC Characteristics (1/2)
Parameter
Random Read or Write Cycle Time
Fast Page Mode Cycle Time t
Access Time from RAS t
Access Time from CAS t
Access Time from Column Address t
Access Time from CAS Precharge t
Output Low Impedance Time from CAS
Output Buffer Turn-off Delay Time t
Transition Time t
Refresh Period t
RAS Precharge Time t
RAS Pulse Width t
RAS Pulse Width (Fast Page Mode) t
RAS Hold Time t
CAS Precharge Time t
CAS Pulse Width t
CAS Hold Time t
CAS to RAS Precharge Time t
RAS to CAS Delay Time t
RAS to Column Address Delay Time t
Row Address Set-up Time t
Row Address Hold Time t
Column Address Set-up Time t
Column Address Hold Time t
Column Address Hold Time from RAS t
Column Address to RAS Lead Time t
Symbol
t
RC
PC
RAC
CAC
AA
CPA
t
CLZ
OFF
T
REF
RP
RAS
RASP
RSH
CP
CAS
CSH
CRP
RHCP
RCD
RAD
ASR
RAH
ASC
CAH
AR
RAL
(VCC = 5 V ±10%, Ta = 0°C to 70°C) Note 1,2,3
MSC23B236A
-60BS8/DS8
Min.
Max.
110
40
—
—
—
—
0
0
3
—
40
60
60
10k
100k
15
10
15
10k
60
5
35
20
15
0
10
0
15
50
30
—
—
60
15
30
35
—
15
50
16
—
—
—
—
—
—
45
30
—
—
—
—
—
—
MSC23B236A
-70BS8/DS8
Min.
130
45
—
—
—
—
0
0
3
—
50
70
70
20
10
20
70
5
40 ns
20
15
0
10
0
15
55
35
Max.
—
—
70
20
35
40
—
20
50
16
—
10k
100k
—
—
10k
—
—
—RAS Hold Time from CAS Precharge t
50
35
—
—
—
—
—
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
4, 5, 6
4, 5
4, 6
4
4
7
3
5
6
164
MSC23B236A-xxBS8/DS8¡ Semiconductor
AC Characteristics (2/2)
Parameter
Read Command Set-up Time
Read Command Hold Time t
Read Command Hold Time referenced to RAS
Write Command Set-up Time t
Write Command Hold Time t
Write Command Hold Time from RAS t
Write Command Pulse Width t
Write Command to RAS Lead Time t
Write Command to CAS Lead Time t
Data-in Set-up Time t
Data-in Hold Time t
Data-in Hold Time from RAS t
CAS Active Delay Time from RAS Precharge
RAS to CAS Set-up Time (CAS before RAS)t
RAS to CAS Hold Time (CAS before RAS)t
WE to RAS Precharge Time (CAS before RAS)
WE Hold Time from RAS (CAS before RAS)t
Symbol
t
RCS
RCH
t
RRH
WCS
WCH
WCR
WP
RWL
CWL
DS
DH
DHR
t
RPC
CSR
CHR
t
WRP
WRH
(VCC = 5 V ±10%, Ta = 0°C to 70°C) Note 1,2,3
MSC23B236A MSC23B236A
-60BS8/DS8 -70BS8/DS8
Min.
0
0
0
0
10
45
10
15
15
0
15
50
5
5
10
10
10
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Min.
Max.
0
0
0
0
15
55
15
20
20
0
15
55
5
5
15
10
10 ns
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
8
8
165
MSC23B236A-xxBS8/DS8 ¡ Semiconductor
Notes: 1. A start-up delay of 200 µs is required after power-up followed by a minimum of
eight initialization cycles (RAS-only refresh or CAS before RAS refresh) before
proper device operation is achieved.
When using the internal refresh counter, a minimum of eight CAS before RAS
initialization cycles is required.
2. AC mesurement assume tT = 5 ns.
3. VIH (Min.) and VIL (Max.) are reference levels for measuring input timing signals.
Transition times are measured between VIH and VIL.
4. Measured with a load circuit equivalent to 2 TTL loads and 100 pF.
5. Operation within the t
(Max.) limit ensures that t
RCD
(Max.) is specified as a reference point only. If t
(Max.) limit, access time is controlled by t
6. Operation within the t
(Max.) limit ensures that t
RAD
(Max.) is specified as a reference point only. If t
(Max.) limit, access time is controlled by tAA.
7. t
(Max.) defines the time at which the output achieves an open circuit condition
OFF
and is not referenced to output voltage levels.
8. t
RCH
or t
must be satisfied for a read cycle.
RRH
CAC
(Max.) can be met. t
RAC
is greater than the specified t
RCD
.
(Max.) can be met. t
RAC
is greater than the specified t
RAD
RCD
RCD
RAD
RAD
166
See ADDENDUM B for AC Timing Waveforms
Loading...