OKI KGF1256, KGF1256B Datasheet
E2Q0024-38-71
This version: Jul. 1998
Previous version: Jan. 1998
KGF1256B/1256¡ electronic components
¡ electronic components
KGF1256B/1256
Medium-Power Amplifier
GENERAL DESCRIPTION
The KGF1256B is a medium-power amplifier, with frequencies ranging from the UHF-band to
the L-band, that features high output power, low noise, and low current operation. The
KGF1256B specifications are guaranteed to a fixed matching circuit for 5 V and 850 MHz; external
impedance-matching circuits are also required. Because of the low noise and high output power
at the low operating current, the KGF1256B is ideal as a transmitter-driver amplifier for personal
handy phones.
The KGF1256 is similar to the KGF1256B in specifications and typical properties. Although
having S Parameters that are slightly different from those of the KGF1256B, the KGF1256 meets
the specifications for the KGF1256B, even with the same matching circuits.
FEATURES
• High output power: 15 dBm (min.)
• Low noise: 2.5 dB (max.)
• Low current: 40 mA (max.)
• Self-bias circuit configuration with built-in source capacitor
• Package: 4PSOP
PACKAGE DIMENSIONS
1.8±0.1
0.85±0.05
0.6
3.0±0.2
+0.1
–0.05
1.5±0.15
1.9±0.1
2.8±0.15
0.4
+0.1
–0.05
Note: Ask our sales department for detailed requirements of the KGF1256.
1.1±0.15
0.36 0.74
+0.03
0.125
–0
(Unit: mm)
0.3 MIN
0 to 0.15
Package material
Lead frame material
Pin treatment
Solder plate thickness
Epoxy resin
42 alloy
Solder plating
5 mm or more
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MARKING
(4) (3)
X
XD
KGF1256B/1256¡ electronic components
CIRCUIT
(1)
Gate(1)
(2)
GND(4)
ALPHABETICAL
NUMERICAL
PRODUCT TYPE
LOT
NUMBER
Drain(3)
Source(2)
(1) Gate
(2) Source
(3) Drain
(4) GND
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ABSOLUTE MAXIMUM RATINGS
KGF1256B/1256¡ electronic components
Item
Drain-source voltage
Gate-source voltage
Drain current I
Total power dissipation
Channel temperature
Storage temperature T
Symbol Condition Max.Unit
V
DS
V
GS
DS
P
tot
T
ch
stg
Ta = 25°C
Ta = 25°C
V
V
Ta = 25°C 360mA —
Ta = 25°C
—
mW
°C
— 125°C
Min.
—
–3.0
—
—
–45
7
0.4
300
150
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
Item
Gate-source leakage current 72
Gate-drain leakage current 360mA—VGD = –11 V —
Drain-source leakage current 720mA—VDS = 3 V, VGS = –2 V —
Drain current —mA 100VDS = 3 V, VGS = 0 V —
Operating current 40.0mA —
Gate-source cut-off voltage –0.5V –1.5VDS = 3 V, IDS = 720 mA—
Transconductance —mS 100VDS = 3 V, IDS = 25 mA —
Noise figure 2.5dB —(*1), f = 850 MHz —
Linear gain G
Output power P
Symbol Condition Max.Unit
I
GSS
I
GDO
I
DS(off)
I
DSS
I
V
GS(off)
g
D
m
= –3 V
V
GS
(*1), P
= 5 dBm,
IN
f = 850 MHz
mA
F
(*1), P
–20 dBm
LIN
(*2), P
–20 dBm
=
IN
=
IN
f = 850 MHz
f = 1.5 GHz
f = 1.9 GHz
f = 850 MHz
f = 1.5 GHz
dB
f = 1.9 GHz
(*1), P
5 dBm
O
(*2), P
5 dBm
=
IN
=
IN
f = 850 MHz
f = 1.5 GHz
f = 1.9 GHz
f = 850 MHz
f = 1.5 GHz
dBm
f = 1.9 GHz
Min.
Typ.
—
14.0
—
—
—
— 15.5
—
—
18.0
13.0
10.5
18.0
—
—
—
—
—— 12.5
—— 10.0
—16.0 18.0
—
—— 11.5
—— 15.0
—— 13.0
—— 10.5
*1 Self-bias condition: V
*2 Self-bias condition: V
= 5±0.25 V, V
DD
= 3 V, VG = 0 V
DD
G
= 0 V
3/14
RF CHARACTERISTICS
KGF1256B/1256¡ electronic components
4/14
KGF1256B/1256¡ electronic components
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