OKI KGF1254, KGF1254B Datasheet
E2Q0023-38-71
This version: Jul. 1998
Previous version: Jan. 1998
KGF1254B/1254¡ electronic components
¡ electronic components
KGF1254B/1254
Medium-Power Amplifier
GENERAL DESCRIPTION
The KGF1254B is a medium-power amplifier, with frequencies ranging from the UHF-band to
the L-band, that features high output power, low noise, and low current operation. The
KGF1254B specifications are guaranteed to a fixed matching circuit for 5.2 V and 850 MHz;
external impedance-matching circuits are also required. Because of the low noise and high
output power at the low operating current, the KGF1254B is ideal as a transmitter-driver
amplifier for personal handy phones.
The KGF1254 is an amplifier similar to the KGF1254B in specifications and typical properties.
Although having S Parameters that are slightly different from those of the KGF1254B, the
KGF1254 meets the specifications for the KGF1254B, even with the same matching circuits as
those of the KGF1254B.
FEATURES
• High output power: 20 dBm (min.)
• Low noise: 2.5 dB (max.)
• Low current operation: 80 mA (max.)
• Self-bias circuit configuration with built-in source capacitor
• Package: 4PSOP
PACKAGE DIMENSIONS
1.8±0.1
0.85±0.05
0.6
3.0±0.2
+0.1
–0.05
1.5±0.15
1.9±0.1
2.8±0.15
0.4
+0.1
–0.05
Note: Ask our sales department for detailed requirements of the KGF1254.
1.1±0.15
0.36 0.74
+0.03
0.125
–0
(Unit: mm)
0.3 MIN
0 to 0.15
Package material
Lead frame material
Pin treatment
Solder plate thickness
Epoxy resin
42 alloy
Solder plating
5 mm or more
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MARKING
(4) (3)
X
XD
KGF1254B/1254¡ electronic components
CIRCUIT
(1)
Gate(1)
GND(4)
(2)
NUMERICAL
ALPHABETICAL
PRODUCT TYPE
Drain(3)
Source(2)
LOT
NUMBER
(1) Gate
(2) Source
(3) Drain
(4) GND
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ABSOLUTE MAXIMUM RATINGS
KGF1254B/1254¡ electronic components
Item
Drain-Source voltage
Gate-Source voltage
Drain current I
Total power dissipation
Channel temperature
Storage temperature T
Symbol Condition Max.Unit
V
DS
V
GS
DS
P
tot
T
ch
stg
Ta = 25°C
Ta = 25°C
V
V
Ta = 25°C 360mA —
Ta = 25°C
—
mW
°C
— 125°C
Min.
—
–5.0
—
—
–45
10
0.4
300
150
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
Item
Gate-Source leakage current 72
Gate-Drain leakage current 360mA—VGD = –15 V —
Drain-Source leakage current 720mA—VDS = 3 V, VGS = –2.5 V —
Drain current —mA 130VDS = 3 V, VGS = 0 V —
Operating current 80.0mA —
Gate-Source cut-off voltage –1.0V –2.0VDS = 3 V, IDS = 720 mA—
Transconductance —mS 125VDS = 3 V, IDS = 60 mA —
Noise figure 2.5dB —(*1), f = 850 MHz —
Linear gain G
Output power P
Symbol Condition Max.Unit
I
GSS
I
GDO
I
DS(off)
I
DSS
V
GS(off)
g
I
D
m
= –3 V
V
GS
(*1), P
= 10 dBm,
IN
f = 850 MHz
mA
F
(*1), P
–10 dBm
LIN
(*2), P
–10 dBm
=
IN
=
IN
f = 850 MHz
f = 1.5 GHz
f = 1.9 GHz
f = 850 MHz
f = 1.5 GHz
dB
f = 1.9 GHz
(*1), P
10 dBm
O
(*2), P
10 dBm
=
IN
=
IN
f = 850 MHz
f = 1.5 GHz
f = 1.9 GHz
f = 850 MHz
f = 1.5 GHz
dBm
f = 1.9 GHz
Min.
—
14.0
—
—
—
— 20.0
Typ.
—
—
17.0
13.5
11.0
17.0
—
—
—
—
—— 13.0
—— 10.0
—20.0 22.0
—
—— 18.0
—— 20.0
—— 16.0
—— 15.0
*1 Self-bias condition: V
*2 Self-bias condition: V
= 5.2 V, VG = 0 V
DD
= 3 V, VG = 0 V
DD
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RF CHARACTERISTICS
KGF1254B/1254¡ electronic components
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KGF1254B/1254¡ electronic components
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