OKI KGF1191 Datasheet

E2Q0016-38-71

This version: Jul. 1998

Previous version: Jan. 1998

KGF1191¡ electronic components

¡ electronic components

KGF1191

Small-Signal Amplifier

GENERAL DESCRIPTION

The KGF1191 is a two-stage small-signal amplifier, with frequencies ranging from the UHF-band to the L-band, that features low voltage operation, low current operation, high gain, and high isolation. The KGF1191 specifications are guaranteed to a fixed matching circuit for 3 V and 850 MHz; external impedance-matching circuits are also required. Because of the high gain and high isolation at 3 V, the KGF1191 is ideal as an intermediate-stage amplifier for portable phones.

FEATURES

• Low voltage and low current: 3 V, 5 mA (max.)

• Specifications guaranteed to a fixed matching circuit for 3 V and 850 MHz

• High linear gain: 24 dB (typ.)

• High isolation: –35 dB (typ.)

• Self-bias circuit configuration with built-in source capacitor

• Package: 4PSOP

PACKAGE DIMENSIONS

1.8±0.1

0.85±0.05

+0.1

0.6

–0.05

3.0±0.2

1.5±0.15

1.9±0.1

2.8±0.15

0.4

+0.1 –0.05

1.1±0.15

0.36 0.74

+0.03

0.125

–0

(Unit: mm)

0.3 MIN

0 to 0.15

Package material

Lead frame material

Pin treatment

Solder plate thickness

Epoxy resin

42 alloy

Solder plating

5 mm or more

1/13

MARKING

(4) (3)

X

XK

KGF1191¡ electronic components

CIRCUIT

(1)

IN (1)

(2)

NUMERICAL

PRODUCT TYPE

V

(2)

D1

GND (4)

LOT NUMBER

OUT (3)

(1) IN (2) V

D1

(3) OUT (4) GND

2/13

ABSOLUTE MAXIMUM RATINGS

KGF1191¡ electronic components

Item

Supply voltage

Gate voltage

Total power dissipation

Channel temperature

Storage temperature T

Symbol Condition Max.Unit

V

DD

V

G

P

tot

T

ch

stg

ELECTRICAL CHARACTERISTICS

Item

Operating current

Noise figure F

Linear gain G

Output power P

Isolation ISO

Symbol Condition Max.Unit

I

D

LIN

O

(*1), P

(*1)

(*1), P –30 dBm

(*1), P –13 dBm

(*1), P –20 dBm

Ta = 25°C

—

— 125°C

= –13 dBm

IN

f = 850 MHz

f = 1.5 GHz

f = 1.9 GHz

f = 850 MHz

=

IN

f = 1.5 GHz

f = 1.9 GHz

f = 850 MHz

=

IN

f = 1.5 GHz

f = 1.9 GHz

f = 850 MHz

=

IN

f = 1.5 GHz

f = 1.9 GHz

V

mW

°C

mA

dB

Min.

–3.0

–45

Min.

—

18.0

—

Typ.

—

4.0

4.5

5.0

24.0

7

0.4

200

150

(Ta = 25°C)

5.0

—

—dB — 19.0

—— 15.0

—0 3.0

—dBm — 1.5

——0

—— –35.0

—dB — –30.0

—— –30.0

*1 Self-bias condition: V

= 3±0.3 V, V

DD

= 0 V

G

3/13

RF CHARACTERISTICS

KGF1191¡ electronic components

4/13