E2Q0021-38-72
This version: Jul. 1998
Previous version: Jan. 1998
KGF1181B¡ electronic components
¡ electronic components
KGF1181B
Medium-Power Amplifier
GENERAL DESCRIPTION
The KGF1181B is a two-stage medium-power UHF-band amplifier that features high gain, high
output power, and low power operation. The internally matched 50 W input and output eliminate
external impedance-matching circuits. All specifications for this device are guaranteed at 5 V and
850 MHz. Because of the high gain and high output power, the KGF1181B is ideal as a
transmitter-intermediate-stage amplifier for personal handy phones.
FEATURES
• Internally matched 50 W input and output
• High linear gain: 20 dB (min.)
• High output power: 11.5 dBm (min.)
• Low current operation: 40 mA (max.)
• Self-bias circuit configuration with built-in source capacitor
• Package: 4PSOP
PACKAGE DIMENSIONS
1.8±0.1
0.85±0.05
+0.1
0.6
–0.05
3.0±0.2
1.5±0.15
1.9±0.1
2.8±0.15
0.4
+0.1
–0.05
1.1±0.15
0.36 0.74
+0.03
0.125
–0
(Unit: mm)
0.3 MIN
0 to 0.15
Package material
Lead frame material
Pin treatment
Solder plate thickness
Epoxy resin
42 alloy
Solder plating
5 mm or more
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MARKING
(4) (3)
X
XC
KGF1181B¡ electronic components
CIRCUIT
IN(1)
(1)
VD1(2)
C
f
R
f
Q
1
R
G1
C
S1
(2)
C
C
R
S1
GND(4)
NUMERICAL
NUMERICAL
PRODUCT TYPE
R
G2
C
S2
LOT
NUMBER
OUT(3)
Q
2
R
S2
(1) IN
(2) V
D1
(3) OUT
(4) GND
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ABSOLUTE MAXIMUM RATINGS
KGF1181B¡ electronic components
Item
Supply voltage
Input power
Total power dissipation
Channel temperature
Storage temperature T
Symbol Conditions Max.Unit
V
DD
P
IN
P
tot
T
ch
stg
Ta = 25°C
Ta = 25°C
Ta = 25°C
—
— 125°C
ELECTRICAL CHARACTERISTICS
Item
Operating current 40.0mA
Output power P
Input return loss R
*1 Self-bias condition: V
Symbol Conditions Max.Unit
I
D
LIN
LIN
= 5.2 V, f = 850 MHz
DD
(*1), P
(*1), P
O
= 0 dBm
IN
–20 dBm dB
IN
=
V
dBm
mW
°C
dBm
dB —— –18.0(*1), PIN = –20 dBm
Min.
-45
Min.
—
20.0
—
—
—
—
Typ.
—
—Linear gain G
10
6
300
150
(Ta = 25°C)
—
—11.5 —(*1), PIN = 0 dBm
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