OKI KGF1175B, KGF1175 Datasheet
E2Q0015-38-71
This version: Jul. 1998
Previous version: Jan. 1998
KGF1175B/1175¡ electronic components
¡ electronic components
KGF1175B/1175
Small-Signal Amplifier
GENERAL DESCRIPTION
The KGF1175B is a small-signal amplifier, for frequencies ranging from the UHF-band to the Lband, that features low noise and low current operation. The KGF1175B specifications are
guaranteed to a fixed matching circuit for 5 V and 850 MHz; external impedance-matching
circuits are also required. Because of the one-input dual gate configuration, low noise, and low
operating current, the KGF1175B is ideal as a receiving-stage head amplifier for personal handy
phones.
The KGF1175 is an amplifier similar to the KGF1175B in specifications and typical properties.
Although possessing S Parameters that are slightly different from those of the KGF1175B, the
KGF1175 meets the specifications for the KGF1175B, even with the same matching circuits as
those of the KGF1175B.
FEATURES
• Low current operation: 2.5 mA (max.)
• High output power: 3 dBm (min.)
• Low noise: 2 dB (max.)
• Self-bias circuit configuration with built-in source capacitor
• Package: 4PSOP
PACKAGE DIMENSIONS
1.8±0.1
0.85±0.05
0.6
3.0±0.2
+0.1
–0.05
1.5±0.15
1.9±0.1
2.8±0.15
0.4
+0.1
–0.05
Note: Ask our sales department for detailed requirements of the KGF1175.
1.1±0.15
0.36 0.74
+0.03
0.125
–0
(Unit: mm)
0.3 MIN
0 to 0.15
Package material
Lead frame material
Pin treatment
Solder plate thickness
Epoxy resin
42 alloy
Solder plating
5 mm or more
1/8
MARKING
(4) (3)
X
XR
KGF1175B/1175¡ electronic components
CIRCUIT
(1)
G(1)
(2)
NUMERICAL
NUMERICAL
PRODUCT TYPE
GND(4)
LOT
NUMBER
D(3)
S(2)
(1) Gate
(2) Source
(3) Drain
(4) GND
2/8
ABSOLUTE MAXIMUM RATINGS
KGF1175B/1175¡ electronic components
Item
Drain-source voltage
Gate-source voltage
Drain current I
Total power dissipation
Channel temperature
Storage temperature T
Symbol Condition Max.Unit
V
DS
V
GS
DS
P
tot
T
ch
stg
Ta = 25°C
Ta = 25°C
V
V
Ta = 25°C 60mA —
Ta = 25°C
—
mW
°C
— 125°C
Min.
—
–3.0
—
—
–45
7.0
0.4
200
150
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
Item
Gate-source leakage current 12mA—VGS = –3 V —
Gate-drain leakage current 60mA—VGD = –8 V —
Drain-source leakage current 120mA—VDS = 3 V, VGS = –2.5 V —
Drain current —mA 15VDS = 3 V, VGS = 0 V —
Operating current 2.5mA —(*1), P
Gate-source cut-off voltage –1.0V –2.0VDS = 3 V, IDS = 120 mA—
Linear gain G
Output power —dBm
Third-order intercept point IP
Symbol Condition Max.Unit
I
GSS
I
GDO
I
DS(off)
I
DSS
V
GS(off)
I
D
V
m
LIN
P
(*1), P
O
3
= –20 dBm —
IN
= 3 V, IDS = 1.5 mA mS
DS
= –20 dBm
IN
= –3 dBm
IN
dB
dBm ——11(*1), f2 = 851 MHz
Min.
—
3.0
Typ.
—Noise figure F (*1) dB
—
—8—Transconductance g
2.0
—12.0 —(*1), P
*1 Self-bias condition: V
= 5.0 V±0.25 V, V
DD
= 0 V, f = 850 MHz
G
3/8
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